JP4610335B2 - フォトレジストとして有用な縮合４員環状炭素を有する多環式基を有するフッ素化ポリマーおよび微細平版印刷のための方法 - Google Patents

フォトレジストとして有用な縮合４員環状炭素を有する多環式基を有するフッ素化ポリマーおよび微細平版印刷のための方法 Download PDF

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JP4610335B2
JP4610335B2 JP2004527971A JP2004527971A JP4610335B2 JP 4610335 B2 JP4610335 B2 JP 4610335B2 JP 2004527971 A JP2004527971 A JP 2004527971A JP 2004527971 A JP2004527971 A JP 2004527971A JP 4610335 B2 JP4610335 B2 JP 4610335B2
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group
carbon atoms
halogen
ethylenically unsaturated
fluorine
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JP2005535753A (ja
JP2005535753A5 (https=
Inventor
イー． フェイリング アンドリュー
エル． シャット ザ サード フランク
アレキサンドロビッチ ペトロフ ブャチェスラフ
エドムント スマート ブルース
ブラウン ファーナム ウィリアム
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EIDP Inc
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EI Du Pont de Nemours and Co
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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F14/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen
    • C08F14/18—Monomers containing fluorine
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F214/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen
    • C08F214/18—Monomers containing fluorine
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F214/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen
    • C08F214/18—Monomers containing fluorine
    • C08F214/26—Tetrafluoroethene
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/22—Esters containing halogen
    • C08F220/24—Esters containing halogen containing perhaloalkyl radicals
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F232/00—Copolymers of cyclic compounds containing no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system
    • C08F232/08—Copolymers of cyclic compounds containing no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system having condensed rings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/108—Polyolefin or halogen containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/111—Polymer of unsaturated acid or ester

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  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Polymers & Plastics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Materials For Photolithography (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Polymerisation Methods In General (AREA)
JP2004527971A 2002-08-09 2003-08-08 フォトレジストとして有用な縮合４員環状炭素を有する多環式基を有するフッ素化ポリマーおよび微細平版印刷のための方法 Expired - Fee Related JP4610335B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US40235002P 2002-08-09 2002-08-09
US44050403P 2003-01-16 2003-01-16
PCT/US2003/025022 WO2004014964A2 (en) 2002-08-09 2003-08-08 PHOTORESISTS, FLUORINATED POLYMERS AND PROCESSES FOR 157 nm MICROLITHOGRAPHY

Publications (3)

Publication Number Publication Date
JP2005535753A JP2005535753A (ja) 2005-11-24
JP2005535753A5 JP2005535753A5 (https=) 2006-09-28
JP4610335B2 true JP4610335B2 (ja) 2011-01-12

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JP2004527971A Expired - Fee Related JP4610335B2 (ja) 2002-08-09 2003-08-08 フォトレジストとして有用な縮合４員環状炭素を有する多環式基を有するフッ素化ポリマーおよび微細平版印刷のための方法

Country Status (10)

Country Link
US (1) US7264914B2 (https=)
EP (1) EP1546221B1 (https=)
JP (1) JP4610335B2 (https=)
KR (1) KR20050069979A (https=)
CN (1) CN1675264A (https=)
AT (1) ATE460436T1 (https=)
AU (1) AU2003259727A1 (https=)
DE (1) DE60331667D1 (https=)
TW (1) TW200418883A (https=)
WO (1) WO2004014964A2 (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100558686C (zh) * 2003-03-06 2009-11-11 日本电气株式会社 脂环族不饱和化合物、聚合物、化学增幅抗蚀剂组合物及采用所述组合物形成图案的方法
EP1505439A3 (en) 2003-07-24 2005-04-20 Fuji Photo Film Co., Ltd. Positive photosensitive composition and method of forming resist pattern
KR20070119671A (ko) * 2005-03-11 2007-12-20 이 아이 듀폰 디 네모아 앤드 캄파니 광형상화가능, 열경화가능 불화 레지스트
JP5225555B2 (ja) * 2006-04-27 2013-07-03 東京応化工業株式会社 液浸露光用レジスト組成物およびレジストパターン形成方法
JP4862033B2 (ja) * 2007-12-19 2012-01-25 旭化成株式会社 光吸収性を有するモールド、該モールドを利用する感光性樹脂のパターン形成方法、及び印刷版の製造方法
JP5449909B2 (ja) * 2008-08-04 2014-03-19 東京応化工業株式会社 ポジ型レジスト組成物及びレジストパターン形成方法
JP2010106118A (ja) * 2008-10-29 2010-05-13 Sumitomo Chemical Co Ltd 重合体及びフォトレジスト組成物
JP2014509302A (ja) * 2010-12-21 2014-04-17 ソルヴェイ・スペシャルティ・ポリマーズ・イタリー・エッセ・ピ・ア フッ素化有機化合物の製造方法
KR102433038B1 (ko) * 2014-06-03 2022-08-18 더 케무어스 컴퍼니 에프씨, 엘엘씨 광가교결합된 플루오로중합체를 포함하는 패시베이션 층

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2928865A (en) * 1957-03-25 1960-03-15 Du Pont Fluorinated tricyclononanes and tetracycloundecanes
US5229473A (en) * 1989-07-07 1993-07-20 Daikin Industries Ltd. Fluorine-containing copolymer and method of preparing the same
EP0437619B1 (en) * 1989-07-07 1995-08-30 Daikin Industries, Limited Fluorinated copolymer and method of producing the same
US6232417B1 (en) * 1996-03-07 2001-05-15 The B. F. Goodrich Company Photoresist compositions comprising polycyclic polymers with acid labile pendant groups
IL141803A0 (en) * 1998-09-23 2002-03-10 Du Pont Photoresists, polymers and processes for microlithography
AU2001296737A1 (en) * 2000-10-12 2002-04-22 North Carolina State University Co2-processes photoresists, polymers, and photoactive compounds for microlithography
EP1326903A2 (en) * 2000-10-18 2003-07-16 E. I. du Pont de Nemours and Company Compositions for microlithography
CN1498360A (zh) * 2000-11-29 2004-05-19 纳幕尔杜邦公司 聚合物掺混物及其在用于微细光刻的光刻胶组合物中的应用
KR20040012689A (ko) * 2000-11-29 2004-02-11 이 아이 듀폰 디 네모아 앤드 캄파니 포토레지스트 조성물을 함유하는 다층 엘레멘트 및 이들의미세석판인쇄에서의 용도
EP1246013A3 (en) * 2001-03-30 2003-11-19 E.I. Du Pont De Nemours And Company Photoresists, polymers and processes for microlithography
DE60211883T2 (de) * 2001-03-30 2007-06-06 E.I. Dupont De Nemours And Co., Wilmington Polycyclische, fluor enthaltende polymere und photoresist für mikrolithographie
JP2003252928A (ja) * 2002-02-27 2003-09-10 Nec Corp フッ素含有アセタールまたはケタール構造を有する単量体、重合体、ならびに化学増幅型レジスト組成物
AU2003259728A1 (en) * 2002-08-09 2004-02-25 E. I. Du Pont De Nemours And Company Fluorinated monomers, fluorinated polymers having polycyclic groups with fused 4-membered heterocyclic rings, useful as photoresists, and processes for microlithography

Also Published As

Publication number Publication date
EP1546221B1 (en) 2010-03-10
DE60331667D1 (de) 2010-04-22
EP1546221A4 (en) 2008-06-18
KR20050069979A (ko) 2005-07-05
AU2003259727A8 (en) 2004-02-25
JP2005535753A (ja) 2005-11-24
EP1546221A2 (en) 2005-06-29
AU2003259727A1 (en) 2004-02-25
US20050277052A1 (en) 2005-12-15
WO2004014964A3 (en) 2004-03-18
ATE460436T1 (de) 2010-03-15
CN1675264A (zh) 2005-09-28
WO2004014964A2 (en) 2004-02-19
US7264914B2 (en) 2007-09-04
TW200418883A (en) 2004-10-01

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