KR20050069979A - 포토레지스트, 플루오르화 중합체 및 157 ｎｍ마이크로리소그래피법 - Google Patents
포토레지스트, 플루오르화 중합체 및 157 ｎｍ마이크로리소그래피법 Download PDFInfo
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- KR20050069979A KR20050069979A KR1020057002241A KR20057002241A KR20050069979A KR 20050069979 A KR20050069979 A KR 20050069979A KR 1020057002241 A KR1020057002241 A KR 1020057002241A KR 20057002241 A KR20057002241 A KR 20057002241A KR 20050069979 A KR20050069979 A KR 20050069979A
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Classifications
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F14/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen
- C08F14/18—Monomers containing fluorine
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F214/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen
- C08F214/18—Monomers containing fluorine
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F214/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen
- C08F214/18—Monomers containing fluorine
- C08F214/26—Tetrafluoroethene
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/22—Esters containing halogen
- C08F220/24—Esters containing halogen containing perhaloalkyl radicals
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F232/00—Copolymers of cyclic compounds containing no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system
- C08F232/08—Copolymers of cyclic compounds containing no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system having condensed rings
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/106—Binder containing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/106—Binder containing
- Y10S430/108—Polyolefin or halogen containing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/106—Binder containing
- Y10S430/111—Polymer of unsaturated acid or ester
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Polymers & Plastics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Organic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Materials For Photolithography (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
- Polymerisation Methods In General (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US40235002P | 2002-08-09 | 2002-08-09 | |
| US60/402,350 | 2002-08-09 | ||
| US44050403P | 2003-01-16 | 2003-01-16 | |
| US60/440,504 | 2003-01-16 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20050069979A true KR20050069979A (ko) | 2005-07-05 |
Family
ID=31720593
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020057002241A Withdrawn KR20050069979A (ko) | 2002-08-09 | 2003-08-08 | 포토레지스트, 플루오르화 중합체 및 157 ｎｍ마이크로리소그래피법 |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US7264914B2 (https=) |
| EP (1) | EP1546221B1 (https=) |
| JP (1) | JP4610335B2 (https=) |
| KR (1) | KR20050069979A (https=) |
| CN (1) | CN1675264A (https=) |
| AT (1) | ATE460436T1 (https=) |
| AU (1) | AU2003259727A1 (https=) |
| DE (1) | DE60331667D1 (https=) |
| TW (1) | TW200418883A (https=) |
| WO (1) | WO2004014964A2 (https=) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100558686C (zh) * | 2003-03-06 | 2009-11-11 | 日本电气株式会社 | 脂环族不饱和化合物、聚合物、化学增幅抗蚀剂组合物及采用所述组合物形成图案的方法 |
| EP1505439A3 (en) | 2003-07-24 | 2005-04-20 | Fuji Photo Film Co., Ltd. | Positive photosensitive composition and method of forming resist pattern |
| KR20070119671A (ko) * | 2005-03-11 | 2007-12-20 | 이 아이 듀폰 디 네모아 앤드 캄파니 | 광형상화가능, 열경화가능 불화 레지스트 |
| JP5225555B2 (ja) * | 2006-04-27 | 2013-07-03 | 東京応化工業株式会社 | 液浸露光用レジスト組成物およびレジストパターン形成方法 |
| JP4862033B2 (ja) * | 2007-12-19 | 2012-01-25 | 旭化成株式会社 | 光吸収性を有するモールド、該モールドを利用する感光性樹脂のパターン形成方法、及び印刷版の製造方法 |
| JP5449909B2 (ja) * | 2008-08-04 | 2014-03-19 | 東京応化工業株式会社 | ポジ型レジスト組成物及びレジストパターン形成方法 |
| JP2010106118A (ja) * | 2008-10-29 | 2010-05-13 | Sumitomo Chemical Co Ltd | 重合体及びフォトレジスト組成物 |
| JP2014509302A (ja) * | 2010-12-21 | 2014-04-17 | ソルヴェイ・スペシャルティ・ポリマーズ・イタリー・エッセ・ピ・ア | フッ素化有機化合物の製造方法 |
| KR102433038B1 (ko) * | 2014-06-03 | 2022-08-18 | 더 케무어스 컴퍼니 에프씨, 엘엘씨 | 광가교결합된 플루오로중합체를 포함하는 패시베이션 층 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2928865A (en) * | 1957-03-25 | 1960-03-15 | Du Pont | Fluorinated tricyclononanes and tetracycloundecanes |
| US5229473A (en) * | 1989-07-07 | 1993-07-20 | Daikin Industries Ltd. | Fluorine-containing copolymer and method of preparing the same |
| EP0437619B1 (en) * | 1989-07-07 | 1995-08-30 | Daikin Industries, Limited | Fluorinated copolymer and method of producing the same |
| US6232417B1 (en) * | 1996-03-07 | 2001-05-15 | The B. F. Goodrich Company | Photoresist compositions comprising polycyclic polymers with acid labile pendant groups |
| IL141803A0 (en) * | 1998-09-23 | 2002-03-10 | Du Pont | Photoresists, polymers and processes for microlithography |
| AU2001296737A1 (en) * | 2000-10-12 | 2002-04-22 | North Carolina State University | Co2-processes photoresists, polymers, and photoactive compounds for microlithography |
| EP1326903A2 (en) * | 2000-10-18 | 2003-07-16 | E. I. du Pont de Nemours and Company | Compositions for microlithography |
| CN1498360A (zh) * | 2000-11-29 | 2004-05-19 | 纳幕尔杜邦公司 | 聚合物掺混物及其在用于微细光刻的光刻胶组合物中的应用 |
| KR20040012689A (ko) * | 2000-11-29 | 2004-02-11 | 이 아이 듀폰 디 네모아 앤드 캄파니 | 포토레지스트 조성물을 함유하는 다층 엘레멘트 및 이들의미세석판인쇄에서의 용도 |
| EP1246013A3 (en) * | 2001-03-30 | 2003-11-19 | E.I. Du Pont De Nemours And Company | Photoresists, polymers and processes for microlithography |
| DE60211883T2 (de) * | 2001-03-30 | 2007-06-06 | E.I. Dupont De Nemours And Co., Wilmington | Polycyclische, fluor enthaltende polymere und photoresist für mikrolithographie |
| JP2003252928A (ja) * | 2002-02-27 | 2003-09-10 | Nec Corp | フッ素含有アセタールまたはケタール構造を有する単量体、重合体、ならびに化学増幅型レジスト組成物 |
| AU2003259728A1 (en) * | 2002-08-09 | 2004-02-25 | E. I. Du Pont De Nemours And Company | Fluorinated monomers, fluorinated polymers having polycyclic groups with fused 4-membered heterocyclic rings, useful as photoresists, and processes for microlithography |
-
2003
- 2003-08-08 AT AT03785133T patent/ATE460436T1/de not_active IP Right Cessation
- 2003-08-08 JP JP2004527971A patent/JP4610335B2/ja not_active Expired - Fee Related
- 2003-08-08 AU AU2003259727A patent/AU2003259727A1/en not_active Abandoned
- 2003-08-08 US US10/523,491 patent/US7264914B2/en not_active Expired - Fee Related
- 2003-08-08 KR KR1020057002241A patent/KR20050069979A/ko not_active Withdrawn
- 2003-08-08 EP EP03785133A patent/EP1546221B1/en not_active Expired - Lifetime
- 2003-08-08 CN CNA038192993A patent/CN1675264A/zh active Pending
- 2003-08-08 DE DE60331667T patent/DE60331667D1/de not_active Expired - Lifetime
- 2003-08-08 WO PCT/US2003/025022 patent/WO2004014964A2/en not_active Ceased
- 2003-08-11 TW TW092121993A patent/TW200418883A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| EP1546221B1 (en) | 2010-03-10 |
| DE60331667D1 (de) | 2010-04-22 |
| JP4610335B2 (ja) | 2011-01-12 |
| EP1546221A4 (en) | 2008-06-18 |
| AU2003259727A8 (en) | 2004-02-25 |
| JP2005535753A (ja) | 2005-11-24 |
| EP1546221A2 (en) | 2005-06-29 |
| AU2003259727A1 (en) | 2004-02-25 |
| US20050277052A1 (en) | 2005-12-15 |
| WO2004014964A3 (en) | 2004-03-18 |
| ATE460436T1 (de) | 2010-03-15 |
| CN1675264A (zh) | 2005-09-28 |
| WO2004014964A2 (en) | 2004-02-19 |
| US7264914B2 (en) | 2007-09-04 |
| TW200418883A (en) | 2004-10-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0105 | International application |
Patent event date: 20050207 Patent event code: PA01051R01D Comment text: International Patent Application |
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| PG1501 | Laying open of application | ||
| PC1203 | Withdrawal of no request for examination | ||
| WITN | Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid |