JP4597284B2 - 半導体装置およびその製造方法 - Google Patents

半導体装置およびその製造方法 Download PDF

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Publication number
JP4597284B2
JP4597284B2 JP10429999A JP10429999A JP4597284B2 JP 4597284 B2 JP4597284 B2 JP 4597284B2 JP 10429999 A JP10429999 A JP 10429999A JP 10429999 A JP10429999 A JP 10429999A JP 4597284 B2 JP4597284 B2 JP 4597284B2
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JP
Japan
Prior art keywords
region
type semiconductor
anode
buried layer
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP10429999A
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English (en)
Japanese (ja)
Other versions
JP2000299477A (ja
JP2000299477A5 (enrdf_load_stackoverflow
Inventor
泰典 山下
知秀 寺島
文寿 山本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Electronics Corp
Original Assignee
Renesas Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Priority to JP10429999A priority Critical patent/JP4597284B2/ja
Priority to US09/395,939 priority patent/US6191466B1/en
Priority to DE19960234A priority patent/DE19960234A1/de
Priority to KR1019990058959A priority patent/KR100316040B1/ko
Publication of JP2000299477A publication Critical patent/JP2000299477A/ja
Publication of JP2000299477A5 publication Critical patent/JP2000299477A5/ja
Application granted granted Critical
Publication of JP4597284B2 publication Critical patent/JP4597284B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/411—PN diodes having planar bodies

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Element Separation (AREA)
  • Bipolar Transistors (AREA)
JP10429999A 1999-04-12 1999-04-12 半導体装置およびその製造方法 Expired - Fee Related JP4597284B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP10429999A JP4597284B2 (ja) 1999-04-12 1999-04-12 半導体装置およびその製造方法
US09/395,939 US6191466B1 (en) 1999-04-12 1999-09-14 Semiconductor device containing a diode
DE19960234A DE19960234A1 (de) 1999-04-12 1999-12-14 Halbleitervorrichtung und zugehöriges Herstellungsverfahren
KR1019990058959A KR100316040B1 (ko) 1999-04-12 1999-12-18 반도체 장치 및 그 제조 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10429999A JP4597284B2 (ja) 1999-04-12 1999-04-12 半導体装置およびその製造方法

Publications (3)

Publication Number Publication Date
JP2000299477A JP2000299477A (ja) 2000-10-24
JP2000299477A5 JP2000299477A5 (enrdf_load_stackoverflow) 2006-03-30
JP4597284B2 true JP4597284B2 (ja) 2010-12-15

Family

ID=14377056

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10429999A Expired - Fee Related JP4597284B2 (ja) 1999-04-12 1999-04-12 半導体装置およびその製造方法

Country Status (4)

Country Link
US (1) US6191466B1 (enrdf_load_stackoverflow)
JP (1) JP4597284B2 (enrdf_load_stackoverflow)
KR (1) KR100316040B1 (enrdf_load_stackoverflow)
DE (1) DE19960234A1 (enrdf_load_stackoverflow)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6683334B2 (en) 2002-03-12 2004-01-27 Microsemi Corporation Compound semiconductor protection device for low voltage and high speed data lines
US20050155680A1 (en) * 2004-01-16 2005-07-21 Gyorgy Nagy High ductility, high hot tensile strength tungsten wire and method of manufacture
US7626243B2 (en) * 2006-08-04 2009-12-01 Advanced Analogic Technologies, Inc. ESD protection for bipolar-CMOS-DMOS integrated circuit devices
DE102007024355B4 (de) * 2007-05-24 2011-04-21 Infineon Technologies Ag Verfahren zum Herstellen einer Schutzstruktur
JP5172654B2 (ja) 2008-12-27 2013-03-27 株式会社東芝 半導体装置
FR2978614B1 (fr) * 2011-07-25 2014-09-05 Altis Semiconductor Snc Substrat semi-conducteur comprenant des zones dopees formant une jonction p-n
US9202940B2 (en) * 2011-09-28 2015-12-01 Mitsubishi Electric Corporation Semiconductor device
US9401355B2 (en) * 2011-12-16 2016-07-26 Infineon Technologies Ag Semiconductor device including a diode arranged in a trench
US9385181B2 (en) * 2014-01-23 2016-07-05 Infineon Technologies Ag Semiconductor diode and method of manufacturing a semiconductor diode
JP6685962B2 (ja) * 2017-03-23 2020-04-22 株式会社東芝 半導体装置
JPWO2023090277A1 (enrdf_load_stackoverflow) * 2021-11-22 2023-05-25

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55134983A (en) * 1979-04-09 1980-10-21 Ibm Surface breakdown zener diode
SE427598B (sv) * 1981-08-25 1983-04-18 Ericsson Telefon Ab L M Halvledardiod avsedd att inga i integrerade kretsar
JPH02146458A (ja) 1988-11-29 1990-06-05 Matsushita Electric Ind Co Ltd 給湯システム
JPH0474478A (ja) * 1990-07-16 1992-03-09 Matsushita Electron Corp ダイオード
JPH04299855A (ja) * 1991-03-28 1992-10-23 Nec Corp 半導体集積回路
US5578862A (en) * 1992-12-30 1996-11-26 Mitsubishi Denki Kabushiki Kaisha Semiconductor integrated circuit with layer for isolating elements in substrate
FR2702308B1 (fr) * 1993-03-01 1995-05-24 Sgs Thomson Microelectronics Diode à avalanche dans un circuit intégré bipolaire.
FR2708145B1 (fr) * 1993-07-21 1995-10-06 Sgs Thomson Microelectronics Composant monolithique comprenant une diode de protection en parallèle avec une pluralité de paires de diodes en série.
US5477078A (en) * 1994-02-18 1995-12-19 Analog Devices, Incorporated Integrated circuit (IC) with a two-terminal diode device to protect metal-oxide-metal capacitors from ESD damage
EP0685891B1 (en) * 1994-05-31 2001-08-08 STMicroelectronics S.r.l. Integrated semiconductor diode
JP3459532B2 (ja) 1996-06-28 2003-10-20 三洋電機株式会社 半導体集積回路およびその製造方法
JPH11121768A (ja) * 1997-10-20 1999-04-30 Nec Corp 半導体集積回路

Also Published As

Publication number Publication date
KR100316040B1 (ko) 2001-12-12
US6191466B1 (en) 2001-02-20
DE19960234A1 (de) 2000-10-26
JP2000299477A (ja) 2000-10-24
KR20000067831A (ko) 2000-11-25

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