JP4591851B2 - 半導体研磨スラリー中の金属の定量方法 - Google Patents

半導体研磨スラリー中の金属の定量方法 Download PDF

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Publication number
JP4591851B2
JP4591851B2 JP2005068175A JP2005068175A JP4591851B2 JP 4591851 B2 JP4591851 B2 JP 4591851B2 JP 2005068175 A JP2005068175 A JP 2005068175A JP 2005068175 A JP2005068175 A JP 2005068175A JP 4591851 B2 JP4591851 B2 JP 4591851B2
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Prior art keywords
metal
polishing slurry
semiconductor polishing
chelate
acid
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Japanese (ja)
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JP2006253420A (ja
JP2006253420A5 (https=
Inventor
藤 睦 子 遠
田 知 香 吉
本 哲 郎 松
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Nomura Micro Science Co Ltd
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Nomura Micro Science Co Ltd
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  • Investigating Or Analyzing Non-Biological Materials By The Use Of Chemical Means (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
JP2005068175A 2005-03-10 2005-03-10 半導体研磨スラリー中の金属の定量方法 Expired - Fee Related JP4591851B2 (ja)

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JP2005068175A JP4591851B2 (ja) 2005-03-10 2005-03-10 半導体研磨スラリー中の金属の定量方法

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JP2006253420A JP2006253420A (ja) 2006-09-21
JP2006253420A5 JP2006253420A5 (https=) 2008-04-03
JP4591851B2 true JP4591851B2 (ja) 2010-12-01

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI825858B (zh) * 2021-10-28 2023-12-11 大陸商西安奕斯偉材料科技股份有限公司 用於檢測拋光液中的金屬雜質的方法

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5206120B2 (ja) * 2008-05-28 2013-06-12 株式会社Ｓｕｍｃｏ 金属の分析方法および半導体ウェーハの製造方法
JP2010025559A (ja) * 2008-07-15 2010-02-04 Nomura Micro Sci Co Ltd 金属成分の検査方法
JP2010054423A (ja) * 2008-08-29 2010-03-11 Nomura Micro Sci Co Ltd レジスト洗浄剤中の金属の定量方法
JP5705632B2 (ja) * 2010-06-25 2015-04-22 セイコーインスツル株式会社 重金属または希土類金属イオン濃度の分析方法
JP5889059B2 (ja) * 2011-04-04 2016-03-22 アークレイ株式会社 金属の回収方法
JP6351961B2 (ja) * 2013-12-02 2018-07-04 御国色素株式会社 鉄分の検出方法とその検出方法により管理された炭素材料含有スラリー及びリチウムイオン電池の製造方法
JP2017005050A (ja) * 2015-06-08 2017-01-05 信越化学工業株式会社 研磨組成物及びその製造方法並びに研磨方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0295254A (ja) * 1988-09-30 1990-04-06 Toshiba Corp 金属イオン検出器
JP3412392B2 (ja) * 1996-03-26 2003-06-03 信越半導体株式会社 半導体研磨スラリー中の重金属イオンの定量分析方法
JP3498003B2 (ja) * 1999-03-16 2004-02-16 東芝セラミックス株式会社 ポリシリコンの表層部不純物の分析方法およびポリシリコンをエッチングするための試料処理容器
JP4644120B2 (ja) * 2003-03-18 2011-03-02 野村マイクロ・サイエンス株式会社 半導体研磨スラリー精製用素材、半導体研磨スラリー精製用モジュールおよび半導体研磨スラリーの精製方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI825858B (zh) * 2021-10-28 2023-12-11 大陸商西安奕斯偉材料科技股份有限公司 用於檢測拋光液中的金屬雜質的方法

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