JP4585702B2 - 露光装置 - Google Patents

露光装置 Download PDF

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Publication number
JP4585702B2
JP4585702B2 JP2001036666A JP2001036666A JP4585702B2 JP 4585702 B2 JP4585702 B2 JP 4585702B2 JP 2001036666 A JP2001036666 A JP 2001036666A JP 2001036666 A JP2001036666 A JP 2001036666A JP 4585702 B2 JP4585702 B2 JP 4585702B2
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JP
Japan
Prior art keywords
exposure
gas
ozone
mixed gas
lamp
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2001036666A
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English (en)
Japanese (ja)
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JP2002246283A (ja
JP2002246283A5 (enExample
Inventor
元 中村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2001036666A priority Critical patent/JP4585702B2/ja
Publication of JP2002246283A publication Critical patent/JP2002246283A/ja
Publication of JP2002246283A5 publication Critical patent/JP2002246283A5/ja
Application granted granted Critical
Publication of JP4585702B2 publication Critical patent/JP4585702B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2001036666A 2001-02-14 2001-02-14 露光装置 Expired - Fee Related JP4585702B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001036666A JP4585702B2 (ja) 2001-02-14 2001-02-14 露光装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001036666A JP4585702B2 (ja) 2001-02-14 2001-02-14 露光装置

Publications (3)

Publication Number Publication Date
JP2002246283A JP2002246283A (ja) 2002-08-30
JP2002246283A5 JP2002246283A5 (enExample) 2008-03-27
JP4585702B2 true JP4585702B2 (ja) 2010-11-24

Family

ID=18899913

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001036666A Expired - Fee Related JP4585702B2 (ja) 2001-02-14 2001-02-14 露光装置

Country Status (1)

Country Link
JP (1) JP4585702B2 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4295490B2 (ja) * 2002-11-15 2009-07-15 東京エレクトロン株式会社 処理装置並びに処理装置用のチラー制御方法及びチラー制御装置
TWI311691B (en) * 2003-10-30 2009-07-01 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
DE102017114216A1 (de) 2017-06-27 2018-04-19 Asml Netherlands B.V. Anordnung zur Kontaminationsreduzierung in einem optischen System, insbesondere in einer mikrolithographischen Projektionsbelichtungsanlage

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3174863B2 (ja) * 1991-07-15 2001-06-11 株式会社ニコン 露光方法及びリソグラフィシステム
JP3084332B2 (ja) * 1993-01-19 2000-09-04 キヤノン株式会社 露光装置
JPH10242029A (ja) * 1997-02-27 1998-09-11 Canon Inc 露光装置
JP4181647B2 (ja) * 1997-04-15 2008-11-19 キヤノン株式会社 露光方法
KR20010006432A (ko) * 1997-04-18 2001-01-26 오노 시게오 노광량 제어 방법 및 장치, 노광 방법 및 장치, 및 디바이스 제조 방법
JP3072277B2 (ja) * 1997-09-19 2000-07-31 キヤノン株式会社 露光装置
JPH11283903A (ja) * 1998-03-30 1999-10-15 Nikon Corp 投影光学系検査装置及び同装置を備えた投影露光装置
JPH11219902A (ja) * 1997-11-27 1999-08-10 Nikon Corp 露光装置及びデバイス製造装置
JP2000133583A (ja) * 1998-10-27 2000-05-12 Canon Inc 露光装置およびデバイス製造方法
JP3832984B2 (ja) * 1998-10-27 2006-10-11 キヤノン株式会社 露光装置およびデバイス製造方法
JP3327234B2 (ja) * 1998-12-18 2002-09-24 株式会社ニコン デバイス製造支援装置、デバイス製造システム、及びデバイス製造方法
JP2001015400A (ja) * 1999-06-25 2001-01-19 Nikon Corp 露光方法とこれを用いたデバイスの製造方法、および露光装置とこれを用いたデバイスの製造装置

Also Published As

Publication number Publication date
JP2002246283A (ja) 2002-08-30

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