JP4583529B2 - 半導体装置およびその作製方法 - Google Patents

半導体装置およびその作製方法 Download PDF

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Publication number
JP4583529B2
JP4583529B2 JP31771499A JP31771499A JP4583529B2 JP 4583529 B2 JP4583529 B2 JP 4583529B2 JP 31771499 A JP31771499 A JP 31771499A JP 31771499 A JP31771499 A JP 31771499A JP 4583529 B2 JP4583529 B2 JP 4583529B2
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Prior art keywords
conductive layer
layer
region
film
pair
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Expired - Fee Related
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JP31771499A
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English (en)
Japanese (ja)
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JP2000216396A5 (enrdf_load_stackoverflow
JP2000216396A (ja
Inventor
舜平 山崎
広樹 安達
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP31771499A priority Critical patent/JP4583529B2/ja
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Publication of JP2000216396A5 publication Critical patent/JP2000216396A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

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  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Thin Film Transistor (AREA)
JP31771499A 1998-11-09 1999-11-09 半導体装置およびその作製方法 Expired - Fee Related JP4583529B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP31771499A JP4583529B2 (ja) 1998-11-09 1999-11-09 半導体装置およびその作製方法

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP10-318197 1998-11-09
JP31819798 1998-11-09
JP34489398 1998-11-17
JP10-344893 1998-11-17
JP31771499A JP4583529B2 (ja) 1998-11-09 1999-11-09 半導体装置およびその作製方法

Publications (3)

Publication Number Publication Date
JP2000216396A JP2000216396A (ja) 2000-08-04
JP2000216396A5 JP2000216396A5 (enrdf_load_stackoverflow) 2006-12-07
JP4583529B2 true JP4583529B2 (ja) 2010-11-17

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Family Applications (1)

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JP31771499A Expired - Fee Related JP4583529B2 (ja) 1998-11-09 1999-11-09 半導体装置およびその作製方法

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JP (1) JP4583529B2 (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021030038A1 (en) * 2019-08-09 2021-02-18 Micron Technology, Inc. Transistor and methods of forming integrated circuitry
US10964811B2 (en) 2019-08-09 2021-03-30 Micron Technology, Inc. Transistor and methods of forming transistors
US11417730B2 (en) 2019-08-09 2022-08-16 Micron Technology, Inc. Vertical transistors with channel region having vertically elongated crystal grains that individually are directly against both of the top and bottom source/drain regions
US11637175B2 (en) 2020-12-09 2023-04-25 Micron Technology, Inc. Vertical transistors

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3403115B2 (ja) 1999-04-02 2003-05-06 シャープ株式会社 半導体装置の製造方法
JP2001257350A (ja) 2000-03-08 2001-09-21 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
US6739931B2 (en) 2000-09-18 2004-05-25 Semiconductor Energy Laboratory Co., Ltd. Display device and method of fabricating the display device
CN100481159C (zh) * 2000-09-29 2009-04-22 三洋电机株式会社 半导体器件以及显示装置
JP5046452B2 (ja) 2000-10-26 2012-10-10 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4954366B2 (ja) 2000-11-28 2012-06-13 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4780830B2 (ja) * 2000-11-28 2011-09-28 株式会社半導体エネルギー研究所 電気光学装置およびその作製方法
JP4593256B2 (ja) * 2001-02-28 2010-12-08 株式会社半導体エネルギー研究所 半導体装置の作製方法
SG160191A1 (en) 2001-02-28 2010-04-29 Semiconductor Energy Lab Semiconductor device and manufacturing method thereof
JP4079655B2 (ja) * 2001-02-28 2008-04-23 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
JP4831885B2 (ja) 2001-04-27 2011-12-07 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4402396B2 (ja) * 2003-08-07 2010-01-20 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR101086487B1 (ko) * 2004-12-24 2011-11-25 엘지디스플레이 주식회사 폴리 박막 트랜지스터 기판 및 그 제조 방법
JP2007134730A (ja) * 2006-12-01 2007-05-31 Semiconductor Energy Lab Co Ltd 表示装置
KR102580063B1 (ko) * 2016-07-21 2023-09-19 삼성디스플레이 주식회사 표시 장치 및 이의 제조 방법
JP6412181B2 (ja) * 2017-02-22 2018-10-24 株式会社半導体エネルギー研究所 半導体装置
US12089444B2 (en) 2019-02-27 2024-09-10 Sharp Kabushiki Kaisha Display device and method for manufacturing same
CN112701045B (zh) * 2020-12-29 2023-07-18 北京大学深圳研究生院 双栅薄膜晶体管的结构及制造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3452981B2 (ja) * 1994-04-29 2003-10-06 株式会社半導体エネルギー研究所 半導体集積回路およびその作製方法
JP3762002B2 (ja) * 1996-11-29 2006-03-29 株式会社東芝 薄膜トランジスタ、及び液晶表示装置
JPH1139241A (ja) * 1997-07-18 1999-02-12 Nec Corp 通信制御構成情報転送方式

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021030038A1 (en) * 2019-08-09 2021-02-18 Micron Technology, Inc. Transistor and methods of forming integrated circuitry
US10964811B2 (en) 2019-08-09 2021-03-30 Micron Technology, Inc. Transistor and methods of forming transistors
US11024736B2 (en) 2019-08-09 2021-06-01 Micron Technology, Inc. Transistor and methods of forming integrated circuitry
US11417730B2 (en) 2019-08-09 2022-08-16 Micron Technology, Inc. Vertical transistors with channel region having vertically elongated crystal grains that individually are directly against both of the top and bottom source/drain regions
US11688808B2 (en) 2019-08-09 2023-06-27 Micron Technology, Inc. Transistor and methods of forming integrated circuitry
US11637175B2 (en) 2020-12-09 2023-04-25 Micron Technology, Inc. Vertical transistors

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