JP4578618B2 - 半導体装置及びその作製方法 - Google Patents

半導体装置及びその作製方法 Download PDF

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Publication number
JP4578618B2
JP4578618B2 JP2000142027A JP2000142027A JP4578618B2 JP 4578618 B2 JP4578618 B2 JP 4578618B2 JP 2000142027 A JP2000142027 A JP 2000142027A JP 2000142027 A JP2000142027 A JP 2000142027A JP 4578618 B2 JP4578618 B2 JP 4578618B2
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Japan
Prior art keywords
insulating layer
film
tft
semiconductor device
layer
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Expired - Fee Related
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JP2000142027A
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Japanese (ja)
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JP2001053285A (ja
JP2001053285A5 (enExample
Inventor
舜平 山崎
康行 荒井
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2000142027A priority Critical patent/JP4578618B2/ja
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Publication of JP2001053285A5 publication Critical patent/JP2001053285A5/ja
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  • Liquid Crystal (AREA)
  • Recrystallisation Techniques (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Thin Film Transistor (AREA)
JP2000142027A 1999-05-15 2000-05-15 半導体装置及びその作製方法 Expired - Fee Related JP4578618B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000142027A JP4578618B2 (ja) 1999-05-15 2000-05-15 半導体装置及びその作製方法

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP11-171485 1999-05-15
JP17148599 1999-05-15
JP11-152902 1999-05-31
JP15290299 1999-05-31
JP2000142027A JP4578618B2 (ja) 1999-05-15 2000-05-15 半導体装置及びその作製方法

Publications (3)

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JP2001053285A JP2001053285A (ja) 2001-02-23
JP2001053285A5 JP2001053285A5 (enExample) 2007-06-07
JP4578618B2 true JP4578618B2 (ja) 2010-11-10

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JP2000142027A Expired - Fee Related JP4578618B2 (ja) 1999-05-15 2000-05-15 半導体装置及びその作製方法

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Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4831885B2 (ja) 2001-04-27 2011-12-07 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4695777B2 (ja) * 2001-06-01 2011-06-08 シャープ株式会社 半導体装置の製造方法
JP3921384B2 (ja) * 2001-11-30 2007-05-30 シャープ株式会社 半導体装置の製造方法
US6933527B2 (en) 2001-12-28 2005-08-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and semiconductor device production system
JP4627135B2 (ja) * 2001-12-28 2011-02-09 株式会社半導体エネルギー研究所 半導体装置の生産方法
JP2003330388A (ja) 2002-05-15 2003-11-19 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法
JP4403354B2 (ja) * 2002-09-11 2010-01-27 ソニー株式会社 薄膜回路基板
KR101176539B1 (ko) * 2003-11-04 2012-08-24 삼성전자주식회사 폴리 실리콘막 형성 방법, 이 방법으로 형성된 폴리실리콘막을 구비하는 박막 트랜지스터 및 그 제조방법
JP2006332209A (ja) * 2005-05-24 2006-12-07 Sharp Corp 薄膜トランジスタ基板及びその製造方法
KR101782557B1 (ko) * 2010-10-25 2017-09-28 삼성디스플레이 주식회사 유기 발광 디스플레이 장치 및 그 제조 방법
JP5779692B2 (ja) * 2014-05-13 2015-09-16 株式会社半導体エネルギー研究所 半導体装置
JP6012694B2 (ja) * 2014-11-24 2016-10-25 株式会社半導体エネルギー研究所 発光装置の作製方法
WO2019234856A1 (ja) * 2018-06-06 2019-12-12 堺ディスプレイプロダクト株式会社 レーザアニール方法、レーザアニール装置およびアクティブマトリクス基板の製造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62181419A (ja) * 1986-02-05 1987-08-08 Nec Corp 多結晶シリコンの再結晶化法
JPS6331108A (ja) * 1986-07-25 1988-02-09 Citizen Watch Co Ltd Ｓｏｉ素子の製造方法
JPH0350720A (ja) * 1989-07-18 1991-03-05 Seiko Epson Corp 多結晶シリコン再結晶化法
JPH05206468A (ja) * 1991-09-02 1993-08-13 Fuji Xerox Co Ltd 薄膜トランジスタおよびその製造方法
JP3150840B2 (ja) * 1994-03-11 2001-03-26 株式会社半導体エネルギー研究所 半導体装置の作製方法
JPH09162410A (ja) * 1995-12-07 1997-06-20 Matsushita Electric Ind Co Ltd 薄膜トランジスタ及びその製造方法並びに液晶表示装置

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