JP4578609B2 - 電気光学装置 - Google Patents

電気光学装置 Download PDF

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Publication number
JP4578609B2
JP4578609B2 JP2000072631A JP2000072631A JP4578609B2 JP 4578609 B2 JP4578609 B2 JP 4578609B2 JP 2000072631 A JP2000072631 A JP 2000072631A JP 2000072631 A JP2000072631 A JP 2000072631A JP 4578609 B2 JP4578609 B2 JP 4578609B2
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JP
Japan
Prior art keywords
film
region
tft
pixel
electro
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2000072631A
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English (en)
Japanese (ja)
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JP2000340798A (ja
JP2000340798A5 (enExample
Inventor
舜平 山崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2000072631A priority Critical patent/JP4578609B2/ja
Publication of JP2000340798A publication Critical patent/JP2000340798A/ja
Publication of JP2000340798A5 publication Critical patent/JP2000340798A5/ja
Application granted granted Critical
Publication of JP4578609B2 publication Critical patent/JP4578609B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/302—Details of OLEDs of OLED structures
    • H10K2102/3023—Direction of light emission
    • H10K2102/3026—Top emission

Landscapes

  • Liquid Crystal (AREA)
  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP2000072631A 1999-03-19 2000-03-15 電気光学装置 Expired - Fee Related JP4578609B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000072631A JP4578609B2 (ja) 1999-03-19 2000-03-15 電気光学装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP11-76967 1999-03-19
JP7696799 1999-03-19
JP2000072631A JP4578609B2 (ja) 1999-03-19 2000-03-15 電気光学装置

Publications (3)

Publication Number Publication Date
JP2000340798A JP2000340798A (ja) 2000-12-08
JP2000340798A5 JP2000340798A5 (enExample) 2007-05-10
JP4578609B2 true JP4578609B2 (ja) 2010-11-10

Family

ID=26418070

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000072631A Expired - Fee Related JP4578609B2 (ja) 1999-03-19 2000-03-15 電気光学装置

Country Status (1)

Country Link
JP (1) JP4578609B2 (enExample)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6512504B1 (en) * 1999-04-27 2003-01-28 Semiconductor Energy Laborayory Co., Ltd. Electronic device and electronic apparatus
US7288420B1 (en) 1999-06-04 2007-10-30 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing an electro-optical device
US8853696B1 (en) 1999-06-04 2014-10-07 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and electronic device
TW527735B (en) 1999-06-04 2003-04-11 Semiconductor Energy Lab Electro-optical device
TW512543B (en) 1999-06-28 2002-12-01 Semiconductor Energy Lab Method of manufacturing an electro-optical device
JP2001092413A (ja) 1999-09-24 2001-04-06 Semiconductor Energy Lab Co Ltd Ｅｌ表示装置および電子装置
TW480722B (en) 1999-10-12 2002-03-21 Semiconductor Energy Lab Manufacturing method of electro-optical device
TW468283B (en) 1999-10-12 2001-12-11 Semiconductor Energy Lab EL display device and a method of manufacturing the same
TW471011B (en) 1999-10-13 2002-01-01 Semiconductor Energy Lab Thin film forming apparatus
TW495808B (en) 2000-02-04 2002-07-21 Semiconductor Energy Lab Thin film formation apparatus and method of manufacturing self-light-emitting device using thin film formation apparatus
TW586141B (en) * 2001-01-19 2004-05-01 Semiconductor Energy Lab Semiconductor device and method of manufacturing the same
JP4149168B2 (ja) 2001-11-09 2008-09-10 株式会社半導体エネルギー研究所 発光装置
JP3986051B2 (ja) 2002-04-30 2007-10-03 株式会社半導体エネルギー研究所 発光装置、電子機器
US7002302B2 (en) 2002-10-07 2006-02-21 Samsung Sdi Co., Ltd. Flat panel display
JP2004145011A (ja) * 2002-10-24 2004-05-20 Seiko Epson Corp 配線基板、回路基板、電気光学装置及びその製造方法、電子機器
KR101267499B1 (ko) * 2005-08-18 2013-05-31 삼성디스플레이 주식회사 박막 트랜지스터 기판의 제조 방법 및 그에 의해 제조된박막 트랜지스터
JP5005953B2 (ja) * 2006-05-18 2012-08-22 株式会社ジャパンディスプレイセントラル 薄膜トランジスタ
JP5589359B2 (ja) * 2009-01-05 2014-09-17 セイコーエプソン株式会社 電気光学装置及び電子機器
JP5256144B2 (ja) * 2009-08-03 2013-08-07 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR102690047B1 (ko) * 2017-11-29 2024-07-29 엘지디스플레이 주식회사 박막트랜지스터 어레이 기판 및 그를 포함하는 유기발광표시장치
US11996418B2 (en) * 2019-04-09 2024-05-28 Sharp Kabushiki Kaisha Display device and manufacturing method
CN116013962B (zh) * 2023-03-24 2023-07-18 合肥晶合集成电路股份有限公司 半导体器件的制备方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06260499A (ja) * 1993-03-02 1994-09-16 Casio Comput Co Ltd 薄膜トランジスタおよびその製造方法
JP3326013B2 (ja) * 1994-07-14 2002-09-17 株式会社半導体エネルギー研究所 半導体装置の作製方法
JPH09191111A (ja) * 1995-11-07 1997-07-22 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP3499381B2 (ja) * 1996-09-21 2004-02-23 株式会社半導体エネルギー研究所 アクティブマトリクス型表示装置およびその作製方法

Also Published As

Publication number Publication date
JP2000340798A (ja) 2000-12-08

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