JP4578507B2 - 半導体装置の製造方法、半導体製造装置及び記憶媒体 - Google Patents

半導体装置の製造方法、半導体製造装置及び記憶媒体 Download PDF

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Publication number
JP4578507B2
JP4578507B2 JP2007174307A JP2007174307A JP4578507B2 JP 4578507 B2 JP4578507 B2 JP 4578507B2 JP 2007174307 A JP2007174307 A JP 2007174307A JP 2007174307 A JP2007174307 A JP 2007174307A JP 4578507 B2 JP4578507 B2 JP 4578507B2
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Japan
Prior art keywords
plasma
gas
ashing
dielectric constant
low dielectric
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Expired - Fee Related
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JP2007174307A
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English (en)
Japanese (ja)
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JP2009016446A (ja
JP2009016446A5 (https=
Inventor
祐毅 千葉
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to JP2007174307A priority Critical patent/JP4578507B2/ja
Priority to US12/216,155 priority patent/US8012880B2/en
Publication of JP2009016446A publication Critical patent/JP2009016446A/ja
Publication of JP2009016446A5 publication Critical patent/JP2009016446A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/23—Cleaning during device manufacture during, before or after processing of insulating materials
    • H10P70/234—Cleaning during device manufacture during, before or after processing of insulating materials the processing being the formation of vias or contact holes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/093—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts
    • H10W20/096—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts by contacting with gases, liquids or plasmas

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)
JP2007174307A 2007-07-02 2007-07-02 半導体装置の製造方法、半導体製造装置及び記憶媒体 Expired - Fee Related JP4578507B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2007174307A JP4578507B2 (ja) 2007-07-02 2007-07-02 半導体装置の製造方法、半導体製造装置及び記憶媒体
US12/216,155 US8012880B2 (en) 2007-07-02 2008-06-30 Method of manufacturing semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007174307A JP4578507B2 (ja) 2007-07-02 2007-07-02 半導体装置の製造方法、半導体製造装置及び記憶媒体

Publications (3)

Publication Number Publication Date
JP2009016446A JP2009016446A (ja) 2009-01-22
JP2009016446A5 JP2009016446A5 (https=) 2009-09-10
JP4578507B2 true JP4578507B2 (ja) 2010-11-10

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JP2007174307A Expired - Fee Related JP4578507B2 (ja) 2007-07-02 2007-07-02 半導体装置の製造方法、半導体製造装置及び記憶媒体

Country Status (2)

Country Link
US (1) US8012880B2 (https=)
JP (1) JP4578507B2 (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8282984B2 (en) * 2007-12-03 2012-10-09 Tokyo Electron Limited Processing condition inspection and optimization method of damage recovery process, damage recovering system and storage medium
JP5530744B2 (ja) * 2010-02-15 2014-06-25 大陽日酸株式会社 絶縁膜のダメージ回復方法及びダメージが回復された絶縁膜
JP5538128B2 (ja) * 2010-08-09 2014-07-02 東京エレクトロン株式会社 排気方法およびガス処理装置
JP5941623B2 (ja) * 2011-03-25 2016-06-29 東京エレクトロン株式会社 処理方法および記憶媒体
KR101642636B1 (ko) * 2015-01-05 2016-07-25 삼성전기주식회사 적층 세라믹 전자부품 및 적층 세라믹 전자부품의 실장기판
JP6244402B2 (ja) * 2016-05-31 2017-12-06 東京エレクトロン株式会社 磁気抵抗素子の製造方法及び磁気抵抗素子の製造システム
JP6754257B2 (ja) * 2016-09-26 2020-09-09 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4312630B2 (ja) 2004-03-02 2009-08-12 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
US7396769B2 (en) * 2004-08-02 2008-07-08 Lam Research Corporation Method for stripping photoresist from etched wafer
JP4903374B2 (ja) * 2004-09-02 2012-03-28 ローム株式会社 半導体装置の製造方法
JP4911936B2 (ja) * 2005-09-09 2012-04-04 東京エレクトロン株式会社 プラズマアッシング方法
US7964511B2 (en) 2005-09-09 2011-06-21 Tokyo Electron Limited Plasma ashing method
JP5019741B2 (ja) 2005-11-30 2012-09-05 東京エレクトロン株式会社 半導体装置の製造方法および基板処理システム

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JP2009016446A (ja) 2009-01-22
US20090029558A1 (en) 2009-01-29
US8012880B2 (en) 2011-09-06

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