JP4577497B2 - 半導体発光素子と保護素子との複合半導体装置 - Google Patents

半導体発光素子と保護素子との複合半導体装置 Download PDF

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Publication number
JP4577497B2
JP4577497B2 JP2005014734A JP2005014734A JP4577497B2 JP 4577497 B2 JP4577497 B2 JP 4577497B2 JP 2005014734 A JP2005014734 A JP 2005014734A JP 2005014734 A JP2005014734 A JP 2005014734A JP 4577497 B2 JP4577497 B2 JP 4577497B2
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Japan
Prior art keywords
semiconductor
substrate
electrode
light emitting
main surface
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Expired - Lifetime
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JP2005014734A
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English (en)
Japanese (ja)
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JP2006066863A (ja
JP2006066863A5 (enrdf_load_stackoverflow
Inventor
純治 佐藤
康二 大塚
哲次 杢
隆志 加藤
愛玲 丹羽
康宏 神井
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Sanken Electric Co Ltd
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Sanken Electric Co Ltd
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Priority to JP2005014734A priority Critical patent/JP4577497B2/ja
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Publication of JP2006066863A5 publication Critical patent/JP2006066863A5/ja
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Publication of JP4577497B2 publication Critical patent/JP4577497B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
JP2005014734A 2004-02-02 2005-01-21 半導体発光素子と保護素子との複合半導体装置 Expired - Lifetime JP4577497B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005014734A JP4577497B2 (ja) 2004-02-02 2005-01-21 半導体発光素子と保護素子との複合半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2004026102 2004-02-02
JP2004217715 2004-07-26
JP2005014734A JP4577497B2 (ja) 2004-02-02 2005-01-21 半導体発光素子と保護素子との複合半導体装置

Publications (3)

Publication Number Publication Date
JP2006066863A JP2006066863A (ja) 2006-03-09
JP2006066863A5 JP2006066863A5 (enrdf_load_stackoverflow) 2006-06-15
JP4577497B2 true JP4577497B2 (ja) 2010-11-10

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JP2005014734A Expired - Lifetime JP4577497B2 (ja) 2004-02-02 2005-01-21 半導体発光素子と保護素子との複合半導体装置

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JP (1) JP4577497B2 (enrdf_load_stackoverflow)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI429327B (zh) 2005-06-30 2014-03-01 Semiconductor Energy Lab 半導體裝置、顯示裝置、及電子設備
DE102006039369A1 (de) * 2005-12-30 2007-07-05 Osram Opto Semiconductors Gmbh LED-Halbleiterkörper und Verwendung eines LED-Halbleiterkörpers
KR100765075B1 (ko) * 2006-03-26 2007-10-09 엘지이노텍 주식회사 질화물 반도체 발광 소자 및 그 제조방법
WO2007111432A1 (en) * 2006-03-28 2007-10-04 Seoul Opto Device Co., Ltd. Light emitting device having zener diode therein and method of fabricating the same
US7994514B2 (en) * 2006-04-21 2011-08-09 Koninklijke Philips Electronics N.V. Semiconductor light emitting device with integrated electronic components
JP5044986B2 (ja) 2006-05-17 2012-10-10 サンケン電気株式会社 半導体発光装置
KR101316116B1 (ko) * 2006-06-28 2013-10-11 서울바이오시스 주식회사 제너 다이오드를 구비하는 발광소자 및 그 제조 방법
JP4967580B2 (ja) * 2006-10-11 2012-07-04 サンケン電気株式会社 半導体発光素子及びその製造方法
JP5358882B2 (ja) * 2007-02-09 2013-12-04 サンケン電気株式会社 整流素子を含む複合半導体装置
JP4545203B2 (ja) * 2008-03-18 2010-09-15 株式会社沖データ 光プリントヘッドおよび画像形成装置
JP5304563B2 (ja) * 2009-09-15 2013-10-02 豊田合成株式会社 Ｉｉｉ族窒化物半導体発光素子
JP5520178B2 (ja) * 2010-09-24 2014-06-11 日本電信電話株式会社 発光ダイオード
DE102011011378A1 (de) 2011-02-16 2012-08-16 Osram Opto Semiconductors Gmbh Trägersubstrat und Verfahren zur Herstellung von Halbleiterchips
JP5543514B2 (ja) 2012-03-23 2014-07-09 株式会社東芝 半導体発光素子及びその製造方法
JP6133505B2 (ja) * 2013-11-04 2017-05-24 フィリップス ライティング ホールディング ビー ヴィ サージ保護装置
DE102013112881A1 (de) * 2013-11-21 2015-05-21 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
KR102075984B1 (ko) * 2013-12-06 2020-02-11 삼성전자주식회사 반도체 발광소자 및 이를 구비한 반도체 발광장치
JP6428422B2 (ja) * 2015-03-20 2018-11-28 日亜化学工業株式会社 発光素子
JP2017059700A (ja) * 2015-09-17 2017-03-23 サンケン電気株式会社 半導体発光装置及びその製造方法
JP7228792B2 (ja) * 2019-06-07 2023-02-27 パナソニックＩｐマネジメント株式会社 波長変換装置
JP7228793B2 (ja) * 2019-06-07 2023-02-27 パナソニックＩｐマネジメント株式会社 波長変換デバイス
JP2021048152A (ja) * 2019-09-17 2021-03-25 ソニーセミコンダクタソリューションズ株式会社 半導体素子および半導体装置
CN113013260B (zh) * 2021-02-23 2022-08-23 温州大学 一种光敏型SiC异构结多势垒变容二极管

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2319267A1 (fr) * 1973-07-03 1977-02-18 Radiotechnique Compelec Dispositif electroluminescent a seuil
JP3447527B2 (ja) * 1996-09-09 2003-09-16 株式会社東芝 半導体発光素子およびその製造方法

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