TW201025470A - Method of protecting compound semiconductor from electrostatic discharge damages - Google Patents

Method of protecting compound semiconductor from electrostatic discharge damages Download PDF

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Publication number
TW201025470A
TW201025470A TW99106416A TW99106416A TW201025470A TW 201025470 A TW201025470 A TW 201025470A TW 99106416 A TW99106416 A TW 99106416A TW 99106416 A TW99106416 A TW 99106416A TW 201025470 A TW201025470 A TW 201025470A
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Taiwan
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layer
electrode
conductive layer
protecting
compound semiconductor
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TW99106416A
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Chinese (zh)
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TWI405277B (en
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lian-bi Zhang
Zheng-Chen Lin
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Univ Chang Gung
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Abstract

This invention is a method of protecting a compound semiconductor from electrostatic discharge damages, comprising of the following steps: (a) forming an LED semiconductor on a substrate, the LED substrate having a multi-layered structure and a first and a second electrodes; (b) forming a conductive layer-insulation layer-conductive layer capacitance flip chip substrate that includes a first conductive layer, an insulation layer, and a second conductive layer, with the insulation layer being formed between the first and second conductive layers and being made of a layer of high dielectric constant material, and the conductive layer-insulation layer-conductive layer substrate having a third and a forth electrodes; (c) connecting the first and second electrodes of the LED semiconductor to the respective third and the forth electrodes of the conductive layer-insulation layer-conductive layer capacitance flip chip substrate. As a result, this structure can effectively prevent electrostatic discharge damages.

Description

201025470 VI. Description of the Invention: [Technical Field to Be Invented by the Invention] * The present invention is a technical field relating to a method for protecting a semiconductor from electrostatic destruction, and more particularly to a method for protecting a compound semiconductor from electrostatic discharge damage. [Prior Art] Compound semiconductor elements are commonly used as light-emitting elements, and are required to face electrostatic problems as well as other electronic components. In general, compound semiconductor devices are often connected in parallel with a Zener diode or a Schottky diode as an antistatic method, or may be further connected in series with a filter circuit or the like. In recent years, III-V compound semiconductor materials have attracted a lot of attention due to their potential in optoelectronic and microwave components, especially semiconductor materials containing III-V nitrides, such as gallium nitride (GaN) and aluminum gallium nitride ( Semiconductor elements such as AlGaN) and indium gallium nitride (InGaN). However, since the nitride does not have a naturally occurring homogenous substrate, the direct epitaxy causes a high density defect in the epitaxial layer, so that the antistatic ability is low. Referring to Fig. 5, a nitride element is a schematic diagram of a circuit in which a Zener diode is connected in parallel with a flip-chip semiconductor as a circuit for preventing electrostatic discharge damage. In order to prevent the flip-chip semiconductor (D 1 ) from being damaged by the electrostatic discharge during operation, a Zener diode (D2) is added in parallel with the flip-chip semiconductor (D1) to prevent it. The effect of electrostatic discharge damage. When a normal forward bias is applied to both ends V + and V - of the flip chip semiconductor (D1), a forward current is generated on the P and N junctions of the flip chip semiconductor (D 1 ), at which time the flip chip semiconductor (D 1 ) Normal illumination. However, when an abnormal voltage or static electricity is generated, this excessive voltage can be discharged via the Zener diode (D 2 ) operating in the collapse region, wherein the discharge path passes through the Zener diode (D 2 ) without After the flip-chip semiconductor (D 1 ), the flip-chip semiconducting 3 201025470 body (D 1 ) is not destroyed by abnormal voltage or high static electricity, and the flip-chip semiconductor worker also has a failure to recover (4). The fourth figure is a cross-sectional view of the flip-chip semiconductor structure having a Zener diode according to the fifth figure; as shown in the fourth figure, the semiconductor portion (6 work) includes a substrate (6 4), a first doping a doped gallium nitride layer (66), a second doped type doped gallium nitride layer (63) and an electrode, and a protective portion (62) (which is a Zener diode) includes a first doping The heterotype is replaced by Shi Xi (6 5 ) (such as N type), the second doped type is Shi Xi (7 7 ) (known p++ type), and the metal layer. Wherein, the spherical region is bismuth tin, the first push-type doping dream (6 7 ) electrical (four) to doped-doped doped gallium nitride layer (6 6) ' and the first doped type doped 矽(65) is electrically coupled to the second doped type doped gallium nitride layer (63). Under normal operation, a forward bias acts between the material and v_ to cause current to flow from the first doped type doped gallium nitride layer (6 6) through the second doped type doped nitride layer. (6 3), and the generated light is emitted via the transparent substrate (6 4). When an abnormal voltage or static electricity is generated, the second doping type doping 矽 (6 7) and the first doping are mixed (6 5 ) to form a -discharge path, so that the charge is not used to protect the semiconductor portion. Although the above structure can protect against the destruction of the electrostatic discharge and protect the semiconductor portion, such a structure is difficult to fabricate in the process. Further, since the Zener diode has a problem that the leakage current is large at the time of the forward bias and the external circuit has a problem that the cost is increased, it is not preferable to use it as a component for preventing electrostatic discharge. In addition, in view of the fact that the over-voltage and anti-static protection measures in semiconductors have been completed', but they are not so mature in the single-stone type of light-emitting parts, many of the light-emitting diode semi-conducting elements will be damaged under the electrostatic attack. Problem, 201025470 At present, although there are many flip-chip components, it can be revealed that the LEDs are connected in parallel with the reverse diode or in parallel with a back-to-back Xiaoji diode or a sodium-sodium diode. All of these methods must add additional components to be connected in parallel, and there is also a problem of 'large leakage current. Therefore, effective over-voltage and anti-static protection measures for compound semiconductor devices have indeed been proposed. The conventional methods for protecting compound semiconductors from electrostatic discharge are still limited and lacking, and there is a need for improvement. SUMMARY OF THE INVENTION 技术 Technical problem to be solved: a conventional method for protecting a compound semiconductor from electrostatic discharge damage, the structure is difficult to fabricate in the process, and the Zener diode has a large leakage current when it is forward biased. The problem is that the external circuit has problems such as cost increase and production difficulty, so the components for preventing electrostatic discharge are not ideal. In addition, it is not so mature in monolithic light-emitting diode components. Many of the light-emitting diode semi-conducting elements are often damaged under the electrostatic attack, which causes problems. Although there are many flip-chip components, A parallel diode of a light-emitting diode element or a back-to-back Xiaoji diode or a zirconium diode in parallel has been disclosed, but all of these methods must be added in parallel. There will also be problems with large leakage currents. Technical Problem for Solving the Problem: Providing a method for protecting a compound semiconductor from electrostatic discharge damage comprises the steps of: a. forming the light emitting diode semiconductor on a substrate, wherein the light emitting diode semiconductor has a multilayer structure And a first electrode and a second electrode; b. forming a conductive layer insulating layer conductive layer (CIC) capacitor flip chip substrate, the conductive layer insulating layer conductive layer (CIC) capacitor flip chip substrate comprising a first conductive layer An insulating layer and a second conductive layer are formed between the first conductive layer and the second conductive layer, the insulating layer is a high-k material layer, and the conductive layer is 201025470 The insulating layer conductive layer (CI c) has a third electrode and a fourth electrode on the flip chip substrate; C. electrically connecting the first electrode and the second electrode of the light emitting diode semiconductor to the conductive layer An insulating layer conductive layer (CIC) is mounted on the third electrode and the fourth electrode of the flip chip substrate. The high dielectric constant material layer may be a hafnium oxide layer (IrO 2 ) or a hafnium oxide layer (HfO 2 ). Wherein, the high dielectric constant material layer may be a layer of aluminum oxide (A 1 20 3). The high-k material layer may be a tantalum trioxide layer (Gd 20 3 ), a tantalum trioxide layer (Pr 20 3 ) or a tantalum trioxide layer (La 20 3 ). Wherein, the high dielectric constant material layer can be a rare earth element oxide layer. The conductive layer insulating layer (C I C) capacitor flip-chip substrate is a semiconductor layer high dielectric constant material (h i g h — k) layer semiconductor layer substrate. The conductive layer insulating layer (C I C ) capacitor flip-chip substrate is a metal layer high dielectric constant material (h i g h — k) layer semiconductor layer substrate. Wherein, the conductive layer insulating layer conductive layer (C I C ) capacitor flip-chip substrate is a metal layer high dielectric constant material (h i g h — k) layer metal layer substrate. The conductive layer insulating layer conductive layer (C I C) capacitor flip chip comprises a wire substrate and a surface package substrate. The conductive layer insulating layer (C I C ) capacitor flip chip comprises a single layer substrate or a multilayer substrate. Wherein, the surface mount type substrate is formed by perforation or side plating. 201025470 wherein the electrical connection is performed by using the first electrode and the second electrode of the LED semiconductor in a flip chip manner and the conductive layer conductive layer (cI C) capacitor flip chip substrate The third electrode is in contact with the fourth electrode. The light emitted by the portion of the light-emitting diode semiconductor can be directly emitted from the transparent substrate and supplemented by a metal reflective layer to increase efficiency. Wherein, the light emitted by the portion of the light emitting diode semiconductor can be directly emitted from the transparent substrate and supplemented by a Bragg reflection layer (D B R) to increase efficiency. Wherein, the light emitted by the portion of the light-emitting diode semiconductor can be directly emitted from the transparent substrate and simultaneously supplemented by a metal reflective layer and a Bragg reflection layer (D B R) to increase efficiency. Here, a metal reflective layer of the light-emitting diode semiconductor has silver (Ag) as a reflective layer' and is doped with 1% to 12% of molybdenum (Mo) or chromium (Cr) or palladium (Pd). Wherein the first electrode and the second electrode of the light-emitting diode semiconductor each pass through a solder ball and the third electrode of the conductive layer conductive layer (C j C) capacitor flip-chip substrate The four electrodes are connected. Wherein the second conductive layer is plated with a metal layer on the other side of the high-k material layer. The third electrode or the fourth electrode is electrically connected to the metal layer. The present invention can also provide a method for protecting a compound semiconductor from electrostatic discharge damage, comprising the steps of: forming the light emitting diode semiconductor on a substrate, wherein the light emitting diode semiconductor has a multilayer structure and a first An electrode and a second electrode; forming a conductive layer insulating layer conductive layer capacitor flip-chip substrate, the conductive layer insulating layer conductive layer capacitor flip chip substrate comprises a first conductive layer, an insulating layer and a metal layer 'the insulating layer Formed between the first conductive layer and the metal layer, the insulating layer 201025470 is a high-k material layer, the conductive layer insulating layer has a third electrode and a fourth on the capacitor-covered substrate And electrically connecting the first electrode and the second electrode of the LED body to the third electrode and the fourth electrode of the conductive layer of the conductive layer of the conductive layer; the metal layer is opposite to the electrode The other side of the high-k material layer is provided with an insulating base layer, and the third electrode or the fourth electrode is electrically connected to the metal layer through the structure. Connection. Wherein, the metal layer is a metal reflective layer, and the metal reflective layer can be doped with silver and molybdenum, so that the light is reflected upward and the illumination brightness is increased. Compared with the efficacy of the prior art: 1. The present invention changes the insulating layer to a high-k layer, such as zinc oxide (ZnO), titanium dioxide (Ti02), cerium oxide (IrO 2 ), cerium oxide. The layer (Hf02), the antimony trioxide layer (Gd 20 3 ) or the aluminum oxide layer (Al 2 〇 3) or the like can increase the capacitance, thereby making the effect of protecting the compound semiconductor from electrostatic discharge damage better. Second, the invention adopts different wiring design, which can double the capacitance value of the conventional connection method, and can effectively exert the effect of protecting the compound semiconductor from electrostatic discharge damage. The above-mentioned objects, structures and features of the present invention will be described in detail with reference to the preferred embodiments of the present invention. . [Embodiment] Referring to the first to third figures, the present invention provides a method for protecting a compound semiconductor from electrostatic discharge damage, comprising the steps of: a. forming the light emitting diode semiconductor on a substrate The light emitting diode 201025470 semiconductor has a multilayer structure and a first electrode and a second electrode; b. forming a conductive layer insulating layer conductive layer (c! capacitor flip chip substrate ' (1) 'the conductive layer The insulating layer conductive layer (CIC) capacitor flip-chip substrate (1) ... includes a -first conductive layer (1 〇), an insulating layer (2 〇) and a second conductive layer (30), the insulating layer (2 〇 Is formed between the first conductive layer (丄〇) and the second conductive layer (3 G), the insulating layer (20) is a layer of high-k material, the conductive layer of the conductive layer (c) c) the capacitor flip-chip substrate (1) has a third electrode and a fourth electrode; c. the blade is electrically connected to the first electrode and the second electrode of the LED body Conductive layer insulating layer conductive layer (c! c) capacitor flip-chip substrate (丄) of the third electrode and the fourth electrode Wherein, the high dielectric constant material layer may be a zinc oxide layer (Zn〇). wherein the high dielectric constant material layer may be a titanium dioxide layer (Ti〇2), wherein the high dielectric constant material The layer may be a layer of Al2O3 (Al2〇3), wherein the layer of high-k material may be a layer of three-oxide (Gd2〇3), a layer of antimony trioxide (Pr2〇3) or Trioxide layer (6)). Wherein, the high dielectric constant material layer may be a rare earth element oxide layer. Wherein, the conductive layer insulating material electric layer (c I c) capacitor flip chip substrate (1) is a semiconductor layer high dielectric constant material (h i g h _ k ) layer semiconductor wide substrate. The conductive layer insulating layer (cic) capacitor flip chip substrate (1) is a metal layer high dielectric (four) number material (hi gh — k) layer semi-conducting layer substrate 0 201025470 wherein the conductive layer insulating layer conductive layer (CI c) The capacitor flip-chip substrate (1) is a metal layer high dielectric constant material (hi gh — k) layer metal layer substrate. The conductive layer insulating layer conductive layer (C I C ) capacitor flip chip substrate (1) comprises a wire bonding substrate and a surface package type substrate. The conductive layer insulating layer conductive layer (C I C ) capacitor flip chip substrate (1) comprises a single layer substrate or a multilayer substrate. Wherein, the surface mount type substrate is formed by perforation or side plating. Wherein, the electrical connection is performed by laminating the first electrode and the second electrode of the light emitting diode semiconductor with the conductive layer insulating layer conductive layer (CIC) capacitor flip chip substrate (1) The third electrode is in contact with the fourth electrode. Wherein, the light emitted by the portion of the light emitting diode semiconductor can be directly emitted from the transparent substrate and supplemented by a metal reflective layer to increase efficiency. Wherein, the light emitted by the portion of the light emitting diode semiconductor can be directly emitted from the transparent substrate and supplemented by a Bragg reflection layer (D B R) to increase efficiency. Wherein, the light emitted by the portion of the light-emitting diode semiconductor can be directly emitted from the transparent substrate and simultaneously supplemented by a metal reflective layer and a Bragg reflection layer (DBR) to increase efficiency. Wherein, a metal reflective layer of the light-emitting diode semiconductor is made of silver (Ag) as a reflective layer, and is doped with 1% to 12% of molybdenum (Mo) or chromium (Cr) or palladium (Pd) to adjust thermal expansion. coefficient. The first electrode and the second electrode of the LED semiconductor are respectively transmitted through a solder ball and the third electrode of the conductive layer (CIC) capacitor-clad layer 201025470 The four electrodes are connected. Wherein the second conductive layer (3 〇) is bonded to the other side of the high-k material layer with a metal layer (40), the third electrode or the fourth electrode and the metal layer (40) ) Electrical connection. 'Please refer to the third figure, which is the equivalent circuit of the flip-chip semiconductor structure shown in the figure. It is shown that the semiconductor portion and the protective portion are present in parallel. Under normal operation, a forward bias is applied between V+ and V- to cause current to flow through the negative doping layer from the positive doping dopant layer in the flip chip semiconductor (ie, the light emitting diode) (D1). The doped layer is patterned such that the generated light is emitted through the transparent substrate. When an abnormal voltage pulse or an electrostatic pulse is generated, the electric charge (4) is along the protective portion, the electric layer insulating layer conductive layer α(6), the capacitor flip-chip substrate (1) (as shown in the first and second figures), between the first electrode and the second electrode. The discharge is turned on without passing through the semiconductor portion. At present, the high dielectric constant material (high_k) is mainly for the verification (4) in the field of DRAM, because the capacitor is the main component of charge storage, and the size is reduced, and the larger capacitance, high dielectric constant material (high_k) is required. It is available as an application. The capacitance formula is c= U · . A) / t ′ where c: capacitance, η mesh versus dielectric coefficient, dielectric constant, A: capacitance area, t: capacitance thickness. Since the capacitance is proportional to the λ: value, the High-K material has a higher relative dielectric constant κ, so the capacitance is higher. Referring to Figures - and 2, the present invention can have two possible implementations of the connection. The connection disclosed in the first embodiment has a capacitance value twice that of the connection disclosed in the second figure. Therefore, the compound semiconductor can be effectively protected from electrostatic discharge damage by the connection shown in the first figure. Because of the connection operation shown in the second figure, the electric CWWMCJ) 'where Ci is the equivalent capacitance value between the left first conductive layer (丄〇) and the second conductive layer (3G); ^ is the right side - conductive The equivalent capacitance between the layer (work 0) and the first conductive layer (3〇). The capacitance value after the 201025470 connection operation shown in the figure is C=C or C, and the capacitance is fixed. Therefore, the capacitance value of the connection disclosed in the first figure can be disclosed in the second figure. Double the law. In addition, the present invention can also be designed as another embodiment of the structure shown in FIG. A, and the present invention can also provide a method for protecting a compound semiconductor from electrostatic discharge damage, including the following steps: a. The light-emitting diode semiconductor is on the substrate, wherein the light-emitting diode semiconductor has a multi-layer structure and a -electrode and a second electrode; b. forming a conductive layer insulating layer conductive layer capacitor flip-chip substrate, the conductive layer The insulating layer conductive layer capacitor flip chip substrate comprises a first conductive layer (丄〇0), an insulating layer (2 〇) and a metal layer (4 〇), and the insulating layer (2 〇) is formed on Between the first conductive layer (1〇) and the metal layer (4()), the insulating layer (2 G) is a high dielectric constant (four) layer, and the conductive layer insulating layer conductive layer capacitor flip chip substrate ( 1) having a third electrode and a fourth electrode; c. electrically connecting the first electrode and the second electrode of the light emitting diode semiconductor to the conductive layer capacitor flip chip substrate of the conductive layer insulating layer (1) On the third electrode and the fourth electrode; the metal layer (4 〇) is opposite to the height The other side of the dielectric coefficient based material layer is provided with - an insulating base layer (5〇), the third or the fourth electrode and the metal electrode system © layer (40) adjacent embodiment turned electrically connected through the structure. Wherein the metal I (40) is directly connected to the first conductive layer (i) through the insulating layer (2), and the bottom surface of the metal layer (40) is further adjacent to an insulating substrate layer ( 5 0), the p-pole or the N-pole in the first conductive layer (! ◦) can be used to directly connect the metal layer (4 〇), but, experimentally, the p-pole is connected to the metal layer (4) 0) Antistatic protection effect and pressure resistance effect is better. The metal layer (40) is a metal reflective layer which is doped with silver and 锢' to reflect light upwards and increase illumination brightness. 12 201025470 In summary, first, the present invention changes the insulating layer to a high-k layer, such as cerium oxide (Ir02), cerium oxide layer (Hf02), and antimony trioxide layer ( Gd 20 3) or an aluminum oxide layer (A 1 20 3 ) or the like can increase the capacitance, so that the effect of protecting the compound semiconductor from electrostatic discharge damage is better. Furthermore, the invention adopts different wiring design, which can double the capacitance value of the conventional connection method, and can effectively exert the effect of protecting the compound semiconductor from electrostatic discharge damage. The foregoing is a description of the technical features of the present invention, and the present invention can be modified and modified without departing from the spirit and scope of the present invention. And modifications should be covered in the scope defined by the scope of the patent application below. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic view showing the connection of a flip-chip light-emitting diode of a feasible embodiment of the present invention for electrically connecting a conductive layer of a conductive layer and a capacitor-covered flip-chip substrate. FIG. 1A is a schematic view showing the structure of a flip-chip light-emitting diode of another feasible embodiment of the present invention for electrically connecting a conductive layer of a conductive layer and a capacitor-covered flip-chip substrate. The second figure is a schematic diagram of another connection of the flip-chip light-emitting diode of the feasible embodiment of the present invention for electrically connecting the conductive layer of the conductive layer and the conductive layer of the conductive layer. Third FIGURE: A schematic diagram of an implementation circuit of a possible embodiment of the present invention. Fig. 4 is a schematic view showing the structure of a Zener diode electrically connected to a flip-chip light-emitting diode. Figure 5: Schematic diagram of the implementation of the anti-static damage structure. 13 201025470 [Description of main component symbols] • Conventional part · (6 1 ) Semiconductor part (6 2) Protection part (6 3) Second doped type doped gallium nitride layer (6 4) Substrate (6 5) A doped type doped ytterbium (6 6) first doped type doped gallium nitride layer (6 7) second doped type doped ytterbium (D 1 ) flip chip semiconductor (D 2 ) Zener diode • Part of the invention (1) Conductive layer insulating layer Conductive layer Capacitor flip chip substrate (10) First conductive layer (20) Insulating layer (30) Second conductive layer (40) Metal layer (50) Insulating base layer (D1) flip chip semiconductor 14

Claims (1)

  1. 201025470 VII. Patent application scope: 1. A method for protecting a compound semiconductor from electrostatic discharge damage, the package includes the following steps: forming the compound semiconductor on a substrate, wherein the semiconductor has a multilayer structure and a first An electrode and a second electrode, the semiconductor is a light emitting diode semiconductor; forming a conductive layer insulating layer conductive layer capacitor flip chip substrate, the conductive layer insulating layer conductive layer capacitor flip chip substrate comprises a first conductive layer, An insulating layer and a second conductive layer formed between the first conductive layer and the second conductive layer, the insulating layer being a high-k material layer, the conductive layer insulating layer is conductive The layer-capacitor flip-chip substrate has a third electrode and a fourth electrode; and the first electrode and the second electrode electrically connected to the conductive layer of the conductive layer and the capacitor-covered flip-chip substrate On the three electrodes and the fourth electrode. 2. The method for protecting a compound semiconductor from electrostatic discharge destruction according to claim 1, wherein the high-k material layer may be a zinc oxide layer (ZnO), a titanium dioxide layer (Ti02), or a dioxide.铱 layer (Ir02) or ruthenium dioxide layer (Hf02). 3. The method of protecting a compound semiconductor from electrostatic discharge destruction according to claim 1, wherein the high dielectric constant material layer is an aluminum oxide layer (ai2o3). 4. The method for protecting a compound semiconductor from electrostatic discharge destruction according to claim 1, wherein the high-k material layer may be a germanium trioxide layer (Gd 2 0 3 ), a tri-oxidation. Diterpenoid layer (Pr 2 0 3 ) or a trioxane layer (La203). 5. The method of protecting a compound semiconductor according to claim 1, wherein the high dielectric constant material layer is a rare earth element oxide layer. 6. The method for protecting a compound semiconductor according to claim 1, wherein the conductive layer of the conductive layer is a semiconductor layer high dielectric constant material (hi gh — k a layer of a semiconductor layer substrate. 7. The method for protecting a compound semiconductor according to claim 1 from electrostatic discharge destruction, wherein the conductive layer insulating layer capacitor flip chip substrate is a metal layer high dielectric constant material (high — k) layer Semiconductor layer substrate. 8. The method for protecting a compound semiconductor according to claim 1 from electrostatic discharge destruction, wherein the conductive layer insulating layer capacitor flip chip substrate is a metal layer high dielectric constant material (high — k) layer Metal layer substrate. 9. The method of protecting a compound semiconductor from electrostatic discharge destruction according to claim 1, wherein the conductive layer insulating layer capacitor flip chip comprises a wire substrate and a surface package substrate. The method for protecting a compound semiconductor from electrostatic discharge damage according to the first aspect of the invention, wherein the conductive layer insulating layer capacitor-coated substrate comprises a single-layer substrate or a multi-layer substrate. A method for protecting a compound semiconductor from electrostatic discharge destruction according to claim 9, wherein the surface mount type substrate is formed by a perforation or a side electric clock. The method for protecting a compound semiconductor from electrostatic discharge damage according to claim 1, wherein the electrical connection is performed by the first electrode of the light-emitting diode and the first electrode The second electrode is in a flip chip manner and the third electrode of the conductive layer capacitor substrate of the conductive layer is connected to the fourth electrode. The method for protecting a compound semiconductor from electrostatic discharge destruction according to claim 1, wherein the light emitted from the light emitting diode semiconductor portion can be directly emitted from the transparent substrate and supplemented by a metal reflection. Layers to increase efficiency. The method for protecting a compound semiconductor from electrostatic discharge destruction according to claim 1, wherein the light emitted from the light emitting diode semiconductor portion can be directly emitted from the transparent substrate and supplemented by the above Bragg reflection layer (DB R) to increase efficiency. The method for protecting a compound semiconductor from electrostatic discharge destruction according to claim 1, wherein the light emitted from the light emitting diode semiconductor portion can be directly emitted from the transparent substrate and simultaneously supplemented with a metal A reflective layer and a Bragg reflector (DBR) are added to increase efficiency. The method for protecting a compound semiconductor from electrostatic discharge destruction according to claim 1, wherein a metal reflective layer of the light emitting diode semiconductor has silver (Ag) as a reflective layer and is doped with 1 % to 12% molybdenum (Mo) or chromium (Cr) or Pd (Pd). The method for protecting a compound semiconductor from electrostatic discharge damage according to claim 1, wherein the first electrode and the second electrode of the light emitting diode semiconductor each pass through a solder ball Conductive Layer Insulating Layer Conductive Layer The third electrode of the capacitor flip-chip substrate is in contact with the fourth electrode. The method for protecting a compound semiconductor from electrostatic discharge damage according to claim 1, wherein the second conductive layer is plated with a metal layer on the other side of the high-k material layer. The third electrode or the fourth electrode is electrically connected to the metal layer. 1 9 · A method for protecting a compound semiconductor from electrostatic discharge damage, comprising the steps of: forming the light emitting diode semiconductor on a substrate, wherein the light emitting diode semiconductor has a multilayer structure and a first electrode a second electrode; forming a conductive layer insulating layer conductive layer capacitor flip chip substrate, the conductive layer insulating layer conductive layer capacitor flip chip substrate comprises a first conductive layer, an insulating layer and a metal layer, the insulating layer is formed Between the first conductive layer and the metal layer, the insulating layer is a high-k material layer, and the conductive layer insulating layer has a third electrode and a fourth electrode on the flip-chip substrate; Electrically connecting the first electrode and the second electrode of the LED body to the third electrode and the fourth electrode of the conductive layer of the conductive layer of the conductive layer; the metal layer is opposite to the The other side of the high-k material layer is provided with an insulating base layer, and the third electrode or the fourth electrode is electrically connected to the metal layer through the structure. The method for protecting a compound semiconductor from electrostatic discharge destruction according to claim 19, wherein the high dielectric constant material layer may be a hafnium oxide layer (IrO 2 ) or a hafnium oxide layer. (Hf02). The method of protecting a compound semiconductor from electrostatic discharge destruction according to claim 19, wherein the high dielectric constant material layer is a aluminum oxide layer (A1203). 2 2 · A method for protecting a compound semiconductor according to claim 19, wherein the high-k material layer can be a tantalum trioxide layer (Gd 2 0 3 ). , a ruthenium trioxide layer (Pr 2 0 3 ) or a ruthenium trioxide layer (La 20 3). The method of protecting a compound semiconductor from electrostatic discharge destruction according to claim 19, wherein the high dielectric constant material layer may be a rare earth element oxide layer. The method of protecting a compound semiconductor from electrostatic discharge destruction according to claim 19, wherein the metal layer is a metal reflective layer. ❹ 2 5 A method for protecting a compound semiconductor from electrostatic discharge destruction as described in claim 24, wherein the metal reflective layer is doped with silver and molybdenum.
TW99106416A 2010-03-05 2010-03-05 Protection of compound semiconductors from electrostatic discharge damage TWI405277B (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI420770B (en) * 2010-10-12 2013-12-21 Innolux Corp Driver circuit with electrostatic discharge protection

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TWI278124B (en) * 2005-07-29 2007-04-01 Nan Ya Photonics Inc Method for protecting compound semiconductor from being destructed by electrostatic discharge and flip-chip semiconductor device having protection capability against electrostatic discharge

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI420770B (en) * 2010-10-12 2013-12-21 Innolux Corp Driver circuit with electrostatic discharge protection

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