JP4571405B2 - 電子部品の作製方法 - Google Patents

電子部品の作製方法 Download PDF

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Publication number
JP4571405B2
JP4571405B2 JP2003522978A JP2003522978A JP4571405B2 JP 4571405 B2 JP4571405 B2 JP 4571405B2 JP 2003522978 A JP2003522978 A JP 2003522978A JP 2003522978 A JP2003522978 A JP 2003522978A JP 4571405 B2 JP4571405 B2 JP 4571405B2
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JP
Japan
Prior art keywords
support
wafer
electronic component
patterned
active
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2003522978A
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English (en)
Japanese (ja)
Other versions
JP2005501405A5 (enExample
JP2005501405A (ja
Inventor
ライプ，ユルゲン
ビエク，フロリアン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Schott AG
Original Assignee
Schott AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE10141571A external-priority patent/DE10141571B8/de
Priority claimed from DE10222960A external-priority patent/DE10222960A1/de
Application filed by Schott AG filed Critical Schott AG
Publication of JP2005501405A publication Critical patent/JP2005501405A/ja
Publication of JP2005501405A5 publication Critical patent/JP2005501405A5/ja
Application granted granted Critical
Publication of JP4571405B2 publication Critical patent/JP4571405B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/804—Containers or encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/407—Optical elements or arrangements indirectly associated with the devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)
  • Ceramic Capacitors (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Pressure Sensors (AREA)
  • Electroluminescent Light Sources (AREA)
  • Dicing (AREA)
  • Optical Couplings Of Light Guides (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
JP2003522978A 2001-08-24 2002-08-26 電子部品の作製方法 Expired - Fee Related JP4571405B2 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DE10141571A DE10141571B8 (de) 2001-08-24 2001-08-24 Verfahren zum Zusammenbau eines Halbleiterbauelements und damit hergestellte integrierte Schaltungsanordnung, die für dreidimensionale, mehrschichtige Schaltungen geeignet ist
DE10141558 2001-08-24
DE10222960A DE10222960A1 (de) 2002-05-23 2002-05-23 Verfahren zur Herstellung von elektronischen Bauelementen
PCT/EP2002/009497 WO2003019617A2 (de) 2001-08-24 2002-08-26 Verfahren zur herstellung von elektronischen bauelementen

Publications (3)

Publication Number Publication Date
JP2005501405A JP2005501405A (ja) 2005-01-13
JP2005501405A5 JP2005501405A5 (enExample) 2005-12-22
JP4571405B2 true JP4571405B2 (ja) 2010-10-27

Family

ID=27214576

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003522978A Expired - Fee Related JP4571405B2 (ja) 2001-08-24 2002-08-26 電子部品の作製方法

Country Status (9)

Country Link
US (2) US7160478B2 (enExample)
EP (1) EP1419530B1 (enExample)
JP (1) JP4571405B2 (enExample)
KR (2) KR100986816B1 (enExample)
AT (1) ATE369626T1 (enExample)
AU (1) AU2002342623A1 (enExample)
DE (1) DE50210653D1 (enExample)
SG (1) SG161099A1 (enExample)
WO (1) WO2003019617A2 (enExample)

Families Citing this family (51)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7224856B2 (en) * 2001-10-23 2007-05-29 Digital Optics Corporation Wafer based optical chassis and associated methods
US7074638B2 (en) 2002-04-22 2006-07-11 Fuji Photo Film Co., Ltd. Solid-state imaging device and method of manufacturing said solid-state imaging device
EP1686617A3 (en) * 2002-07-29 2007-01-03 Fuji Photo Film Co., Ltd. Solid-state imaging device and method of manufacturing the same
JP3896951B2 (ja) * 2002-11-13 2007-03-22 松下電器産業株式会社 光通信用送受光モジュール
JP2005241457A (ja) * 2004-02-26 2005-09-08 Hamamatsu Photonics Kk 赤外線センサ及びその製造方法
JP4670251B2 (ja) * 2004-04-13 2011-04-13 日亜化学工業株式会社 発光装置
TWM271321U (en) * 2004-09-10 2005-07-21 Aiptek Int Inc Flip-chip packaging device
US20060131710A1 (en) * 2004-12-21 2006-06-22 Taiwan Semiconductor Manufacturing Company, Ltd. Advanced cavity structure for wafer level chip scale package
US20070197922A1 (en) * 2006-02-17 2007-08-23 Honeywell International Inc. Disposable pressure sensor systems and packages therefor
EP1870936A1 (fr) * 2006-06-19 2007-12-26 STMicroelectronics (Rousset) SAS Procédé de fabrication de lentilles, notamment pour imageur intégré
WO2008023826A1 (en) * 2006-08-25 2008-02-28 Sanyo Electric Co., Ltd. Semiconductor device and its manufacturing method
JPWO2008023827A1 (ja) * 2006-08-25 2010-01-14 三洋電機株式会社 半導体装置
WO2008023824A1 (fr) * 2006-08-25 2008-02-28 Sanyo Electric Co., Ltd. Dispositif à semi-conducteur et son procédé de fabrication
DE102007038465A1 (de) * 2006-11-20 2008-05-21 Awaiba Gmbh Kameramodul auf Waferebene
JP4958273B2 (ja) * 2007-01-23 2012-06-20 オンセミコンダクター・トレーディング・リミテッド 発光装置及びその製造方法
US7576425B2 (en) * 2007-01-25 2009-08-18 Xintec, Inc. Conducting layer in chip package module
TWI353667B (en) * 2007-07-13 2011-12-01 Xintec Inc Image sensor package and fabrication method thereo
US8772919B2 (en) 2007-08-08 2014-07-08 Wen-Cheng Chien Image sensor package with trench insulator and fabrication method thereof
TWI345830B (en) * 2007-08-08 2011-07-21 Xintec Inc Image sensor package and fabrication method thereof
US7880293B2 (en) * 2008-03-25 2011-02-01 Stats Chippac, Ltd. Wafer integrated with permanent carrier and method therefor
DE102008025756B4 (de) * 2008-05-29 2023-02-23 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiteranordnung
KR100950915B1 (ko) * 2008-06-17 2010-04-01 삼성전기주식회사 웨이퍼 레벨 카메라 모듈 및 그 제조방법
JP5186295B2 (ja) * 2008-06-30 2013-04-17 富士フイルム株式会社 撮像モジュール及びその製造方法並びに内視鏡装置
ES2416254B1 (es) 2009-02-09 2014-12-29 Semprius, Inc. Módulos fotovoltaicos de tipo concentrador (cpv), receptores y sub-receptores y métodos para formar los mismos
JP2010245292A (ja) * 2009-04-06 2010-10-28 Panasonic Corp 光学デバイス、電子機器、及びその製造方法
EP2246890B1 (fr) * 2009-04-28 2013-03-13 STMicroelectronics (Crolles 2) SAS Mode de réalisation d'un module de capture d'images
DE102009024425B4 (de) * 2009-06-09 2011-11-17 Diehl Aerospace Gmbh Anschlusseinrichtung für eine lichtemittierende Diode und Beleuchtungseinheit
WO2011108664A1 (ja) * 2010-03-03 2011-09-09 有限会社Ｍｔｅｃ 光半導体装置
JP5558189B2 (ja) * 2010-04-26 2014-07-23 浜松ホトニクス株式会社 赤外線センサ及びその製造方法
US20120154945A1 (en) * 2010-12-16 2012-06-21 William Mark Hiatt Optical apertures and applications thereof
EP2472579A1 (de) * 2010-12-30 2012-07-04 Baumer Innotec AG Kontaktierung von Bauelementen auf Substraten
US9252172B2 (en) 2011-05-31 2016-02-02 Stats Chippac, Ltd. Semiconductor device and method of forming EWLB semiconductor package with vertical interconnect structure and cavity region
SG193151A1 (en) 2011-07-19 2013-09-30 Heptagon Micro Optics Pte Ltd Opto-electronic modules and methods of manufacturing the same and appliances and devices comprising the same
US9564413B2 (en) 2011-09-15 2017-02-07 STATS ChipPAC Pte. Ltd. Semiconductor device and method of forming semiconductor die with active region responsive to external stimulus
US9553162B2 (en) 2011-09-15 2017-01-24 STATS ChipPAC Pte. Ltd. Semiconductor device and method of forming semiconductor die with active region responsive to external stimulus
US20140264693A1 (en) * 2013-03-12 2014-09-18 Optiz, Inc. Cover-Free Sensor Module And Method Of Making Same
US9575722B2 (en) 2013-03-14 2017-02-21 International Business Machines Corporation Software interface for a specialized hardward device
US9431315B2 (en) * 2013-12-26 2016-08-30 Agency For Science, Technology And Research Chemical sensor package for highly pressured environment
US9481572B2 (en) * 2014-07-17 2016-11-01 Texas Instruments Incorporated Optical electronic device and method of fabrication
US9343447B2 (en) * 2014-09-26 2016-05-17 Texas Instruments Incorporated Optically pumped sensors or references with die-to-package cavities
US9429727B2 (en) * 2014-11-06 2016-08-30 Sae Magnetics (H.K.) Ltd. Wafer level packaged optical subassembly and transceiver module having same
US9543347B2 (en) 2015-02-24 2017-01-10 Optiz, Inc. Stress released image sensor package structure and method
WO2017105581A2 (en) 2015-10-02 2017-06-22 Semprius, Inc. Wafer-integrated, ultra-low profile concentrated photovoltaics (cpv) for space applications
JP6669893B2 (ja) * 2016-04-29 2020-03-18 フィニサー コーポレイション ガラスアセンブリ上の接合チップ
US10522505B2 (en) 2017-04-06 2019-12-31 Advanced Semiconductor Engineering, Inc. Semiconductor device package and method for manufacturing the same
DE102017213065B3 (de) 2017-04-13 2018-07-05 Christian-Albrechts-Universität Zu Kiel Verfahren zur Herstellung von plankonvexen Linsenelementen und zur Herstellung eines gehäusten Bauelements auf Waferebene
JP7359933B2 (ja) * 2019-07-09 2023-10-11 ハイマン・ゼンゾル・ゲゼルシャフト・ミト・ベシュレンクテル・ハフツング 真空充填式ウェハレベル筐体により高分解能の熱赤外線センサーアレーを製作する方法
US11862749B2 (en) * 2019-12-06 2024-01-02 Adesto Technologies Corporation Integrated module assembly for optical integrated circuits
US11329035B2 (en) 2020-04-16 2022-05-10 International Business Machines Corporation Tetherless chip module
KR20240035749A (ko) * 2021-05-10 2024-03-18 퍼듀 리서치 파운데이션 인가된 전자기 방사선에 의해 제어가능한 rf 신호 임피던스를 갖는 도파관 어셈블리를 구비한 반도체 시스템
JP7176788B1 (ja) 2021-06-02 2022-11-22 サンテック株式会社 光デバイス、光デバイスの製造方法、及び光デバイスチップの製造方法

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04145403A (ja) * 1990-10-05 1992-05-19 Seiko Giken:Kk 多芯リボンテープ光ファイバ用分岐合流器およびその製造方法
US5259054A (en) * 1992-01-10 1993-11-02 At&T Bell Laboratories Self-aligned optical subassembly
US5515502A (en) * 1993-09-30 1996-05-07 Sybase, Inc. Data backup system with methods for stripe affinity backup to multiple archive devices
US5500540A (en) * 1994-04-15 1996-03-19 Photonics Research Incorporated Wafer scale optoelectronic package
JP3091903B2 (ja) * 1994-08-17 2000-09-25 セイコーインスツルメンツ株式会社 アバランシェ・フォト・ダイオード及びその製造方法
JPH09199736A (ja) * 1996-01-16 1997-07-31 Olympus Optical Co Ltd 光センサモジュール
DE69734537T2 (de) * 1996-08-27 2006-08-10 Omron Corp. Mikrorelais und Verfahren zu seiner Herstellung
US5798557A (en) 1996-08-29 1998-08-25 Harris Corporation Lid wafer bond packaging and micromachining
US6235141B1 (en) * 1996-09-27 2001-05-22 Digital Optics Corporation Method of mass producing and packaging integrated optical subsystems
US6096155A (en) * 1996-09-27 2000-08-01 Digital Optics Corporation Method of dicing wafer level integrated multiple optical elements
US5761350A (en) * 1997-01-22 1998-06-02 Koh; Seungug Method and apparatus for providing a seamless electrical/optical multi-layer micro-opto-electro-mechanical system assembly
US6198168B1 (en) * 1998-01-20 2001-03-06 Micron Technologies, Inc. Integrated circuits using high aspect ratio vias through a semiconductor wafer and method for forming same
IL123207A0 (en) 1998-02-06 1998-09-24 Shellcase Ltd Integrated circuit device
US6328482B1 (en) * 1998-06-08 2001-12-11 Benjamin Bin Jian Multilayer optical fiber coupler
US6566745B1 (en) * 1999-03-29 2003-05-20 Imec Vzw Image sensor ball grid array package and the fabrication thereof
DE19916572A1 (de) 1999-04-13 2000-10-26 Siemens Ag Optisches Halbleiterbauelement mit optisch transparenter Schutzschicht
US6243508B1 (en) * 1999-06-01 2001-06-05 Picolight Incorporated Electro-opto-mechanical assembly for coupling a light source or receiver to an optical waveguide
IL133453A0 (en) * 1999-12-10 2001-04-30 Shellcase Ltd Methods for producing packaged integrated circuit devices and packaged integrated circuit devices produced thereby
US6351027B1 (en) * 2000-02-29 2002-02-26 Agilent Technologies, Inc. Chip-mounted enclosure
JP3713418B2 (ja) * 2000-05-30 2005-11-09 光正 小柳 ３次元画像処理装置の製造方法
US6556349B2 (en) * 2000-12-27 2003-04-29 Honeywell International Inc. Variable focal length micro lens array field curvature corrector
US6909554B2 (en) * 2000-12-27 2005-06-21 Finisar Corporation Wafer integration of micro-optics
US6635941B2 (en) * 2001-03-21 2003-10-21 Canon Kabushiki Kaisha Structure of semiconductor device with improved reliability
US6967124B1 (en) * 2001-06-19 2005-11-22 Amkor Technology, Inc. Imprinted integrated circuit substrate and method for imprinting an integrated circuit substrate
US6646807B2 (en) * 2001-06-19 2003-11-11 Rohm Co., Ltd. Lens array unit and process for making lens array
DE10141571B8 (de) 2001-08-24 2005-05-25 Schott Ag Verfahren zum Zusammenbau eines Halbleiterbauelements und damit hergestellte integrierte Schaltungsanordnung, die für dreidimensionale, mehrschichtige Schaltungen geeignet ist
DE10222959B4 (de) 2002-05-23 2007-12-13 Schott Ag Mikro-elektromechanisches Bauelement und Verfahren zur Herstellung von mikro-elektromechanischen Bauelementen
DE10222960A1 (de) 2002-05-23 2003-12-11 Schott Glas Verfahren zur Herstellung von elektronischen Bauelementen
US6974966B1 (en) * 2002-01-16 2005-12-13 Vijaysekhar Jayaraman Multiple epitaxial region wafers with optical connectivity

Also Published As

Publication number Publication date
KR20090115818A (ko) 2009-11-06
WO2003019617A2 (de) 2003-03-06
AU2002342623A8 (en) 2003-03-10
US20040256349A1 (en) 2004-12-23
AU2002342623A1 (en) 2003-03-10
KR100986816B1 (ko) 2010-10-12
US20070063202A1 (en) 2007-03-22
ATE369626T1 (de) 2007-08-15
US8114304B2 (en) 2012-02-14
EP1419530B1 (de) 2007-08-08
WO2003019617A3 (de) 2004-01-22
KR100940943B1 (ko) 2010-02-08
EP1419530A2 (de) 2004-05-19
SG161099A1 (en) 2010-05-27
US7160478B2 (en) 2007-01-09
DE50210653D1 (de) 2007-09-20
KR20040036920A (ko) 2004-05-03
JP2005501405A (ja) 2005-01-13

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