KR100986816B1 - 전자 부품 제조 방법 - Google Patents

전자 부품 제조 방법 Download PDF

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Publication number
KR100986816B1
KR100986816B1 KR1020097021389A KR20097021389A KR100986816B1 KR 100986816 B1 KR100986816 B1 KR 100986816B1 KR 1020097021389 A KR1020097021389 A KR 1020097021389A KR 20097021389 A KR20097021389 A KR 20097021389A KR 100986816 B1 KR100986816 B1 KR 100986816B1
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KR
South Korea
Prior art keywords
support
wafer
patterned support
patterned
electronic component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020097021389A
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English (en)
Korean (ko)
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KR20090115818A (ko
Inventor
유르겐 레이브
플로리안 비익
Original Assignee
쇼오트 아게
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE10141571A external-priority patent/DE10141571B8/de
Priority claimed from DE10222960A external-priority patent/DE10222960A1/de
Application filed by 쇼오트 아게 filed Critical 쇼오트 아게
Publication of KR20090115818A publication Critical patent/KR20090115818A/ko
Application granted granted Critical
Publication of KR100986816B1 publication Critical patent/KR100986816B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/804—Containers or encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/407—Optical elements or arrangements indirectly associated with the devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors

Landscapes

  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Led Device Packages (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Ceramic Capacitors (AREA)
  • Pressure Sensors (AREA)
  • Dicing (AREA)
  • Electroluminescent Light Sources (AREA)
  • Optical Couplings Of Light Guides (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
KR1020097021389A 2001-08-24 2002-08-26 전자 부품 제조 방법 Expired - Fee Related KR100986816B1 (ko)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
DE10141571A DE10141571B8 (de) 2001-08-24 2001-08-24 Verfahren zum Zusammenbau eines Halbleiterbauelements und damit hergestellte integrierte Schaltungsanordnung, die für dreidimensionale, mehrschichtige Schaltungen geeignet ist
DE10141571.0 2001-08-24
DE10141558.3 2001-08-24
DE10141558 2001-08-24
DE10222960.0 2002-05-23
DE10222960A DE10222960A1 (de) 2002-05-23 2002-05-23 Verfahren zur Herstellung von elektronischen Bauelementen

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020047002746A Division KR100940943B1 (ko) 2001-08-24 2002-08-26 전자 부품 제조 방법

Publications (2)

Publication Number Publication Date
KR20090115818A KR20090115818A (ko) 2009-11-06
KR100986816B1 true KR100986816B1 (ko) 2010-10-12

Family

ID=27214576

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020097021389A Expired - Fee Related KR100986816B1 (ko) 2001-08-24 2002-08-26 전자 부품 제조 방법
KR1020047002746A Expired - Fee Related KR100940943B1 (ko) 2001-08-24 2002-08-26 전자 부품 제조 방법

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020047002746A Expired - Fee Related KR100940943B1 (ko) 2001-08-24 2002-08-26 전자 부품 제조 방법

Country Status (9)

Country Link
US (2) US7160478B2 (enExample)
EP (1) EP1419530B1 (enExample)
JP (1) JP4571405B2 (enExample)
KR (2) KR100986816B1 (enExample)
AT (1) ATE369626T1 (enExample)
AU (1) AU2002342623A1 (enExample)
DE (1) DE50210653D1 (enExample)
SG (1) SG161099A1 (enExample)
WO (1) WO2003019617A2 (enExample)

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JP3896951B2 (ja) * 2002-11-13 2007-03-22 松下電器産業株式会社 光通信用送受光モジュール
JP2005241457A (ja) * 2004-02-26 2005-09-08 Hamamatsu Photonics Kk 赤外線センサ及びその製造方法
JP4670251B2 (ja) * 2004-04-13 2011-04-13 日亜化学工業株式会社 発光装置
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US20060131710A1 (en) * 2004-12-21 2006-06-22 Taiwan Semiconductor Manufacturing Company, Ltd. Advanced cavity structure for wafer level chip scale package
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US8148811B2 (en) * 2006-08-25 2012-04-03 Semiconductor Components Industries, Llc Semiconductor device and manufacturing method thereof
DE102007038465A1 (de) * 2006-11-20 2008-05-21 Awaiba Gmbh Kameramodul auf Waferebene
JP4958273B2 (ja) * 2007-01-23 2012-06-20 オンセミコンダクター・トレーディング・リミテッド 発光装置及びその製造方法
US7576425B2 (en) * 2007-01-25 2009-08-18 Xintec, Inc. Conducting layer in chip package module
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US8772919B2 (en) 2007-08-08 2014-07-08 Wen-Cheng Chien Image sensor package with trench insulator and fabrication method thereof
TWI345830B (en) * 2007-08-08 2011-07-21 Xintec Inc Image sensor package and fabrication method thereof
US7880293B2 (en) * 2008-03-25 2011-02-01 Stats Chippac, Ltd. Wafer integrated with permanent carrier and method therefor
DE102008025756B4 (de) * 2008-05-29 2023-02-23 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiteranordnung
KR100950915B1 (ko) * 2008-06-17 2010-04-01 삼성전기주식회사 웨이퍼 레벨 카메라 모듈 및 그 제조방법
JP5186295B2 (ja) * 2008-06-30 2013-04-17 富士フイルム株式会社 撮像モジュール及びその製造方法並びに内視鏡装置
CN106449805B (zh) 2009-02-09 2019-03-12 艾克斯瑟乐普林特有限公司 集中器型光电（cpv）模块、接收器和子接收器及其形成方法
JP2010245292A (ja) * 2009-04-06 2010-10-28 Panasonic Corp 光学デバイス、電子機器、及びその製造方法
US8367454B2 (en) * 2009-04-28 2013-02-05 Stmicroelectronics (Crolles 2) Sas Image capture unit
DE102009024425B4 (de) * 2009-06-09 2011-11-17 Diehl Aerospace Gmbh Anschlusseinrichtung für eine lichtemittierende Diode und Beleuchtungseinheit
JPWO2011108664A1 (ja) * 2010-03-03 2013-06-27 有限会社Ｍｔｅｃ 光半導体装置
JP5558189B2 (ja) * 2010-04-26 2014-07-23 浜松ホトニクス株式会社 赤外線センサ及びその製造方法
US20120154945A1 (en) * 2010-12-16 2012-06-21 William Mark Hiatt Optical apertures and applications thereof
EP2472579A1 (de) * 2010-12-30 2012-07-04 Baumer Innotec AG Kontaktierung von Bauelementen auf Substraten
US9252172B2 (en) 2011-05-31 2016-02-02 Stats Chippac, Ltd. Semiconductor device and method of forming EWLB semiconductor package with vertical interconnect structure and cavity region
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US9564413B2 (en) 2011-09-15 2017-02-07 STATS ChipPAC Pte. Ltd. Semiconductor device and method of forming semiconductor die with active region responsive to external stimulus
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US20140264693A1 (en) * 2013-03-12 2014-09-18 Optiz, Inc. Cover-Free Sensor Module And Method Of Making Same
US9575722B2 (en) 2013-03-14 2017-02-21 International Business Machines Corporation Software interface for a specialized hardward device
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US9481572B2 (en) * 2014-07-17 2016-11-01 Texas Instruments Incorporated Optical electronic device and method of fabrication
US9343447B2 (en) 2014-09-26 2016-05-17 Texas Instruments Incorporated Optically pumped sensors or references with die-to-package cavities
US9429727B2 (en) * 2014-11-06 2016-08-30 Sae Magnetics (H.K.) Ltd. Wafer level packaged optical subassembly and transceiver module having same
US9543347B2 (en) 2015-02-24 2017-01-10 Optiz, Inc. Stress released image sensor package structure and method
US10418501B2 (en) 2015-10-02 2019-09-17 X-Celeprint Limited Wafer-integrated, ultra-low profile concentrated photovoltaics (CPV) for space applications
EP3449538B1 (en) * 2016-04-29 2022-11-23 Finisar Corporation Interfacing chip on glass assembly
US10522505B2 (en) 2017-04-06 2019-12-31 Advanced Semiconductor Engineering, Inc. Semiconductor device package and method for manufacturing the same
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JP7359933B2 (ja) * 2019-07-09 2023-10-11 ハイマン・ゼンゾル・ゲゼルシャフト・ミト・ベシュレンクテル・ハフツング 真空充填式ウェハレベル筐体により高分解能の熱赤外線センサーアレーを製作する方法
US11862749B2 (en) * 2019-12-06 2024-01-02 Adesto Technologies Corporation Integrated module assembly for optical integrated circuits
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Also Published As

Publication number Publication date
AU2002342623A1 (en) 2003-03-10
KR20090115818A (ko) 2009-11-06
EP1419530A2 (de) 2004-05-19
AU2002342623A8 (en) 2003-03-10
SG161099A1 (en) 2010-05-27
US7160478B2 (en) 2007-01-09
JP4571405B2 (ja) 2010-10-27
US8114304B2 (en) 2012-02-14
WO2003019617A3 (de) 2004-01-22
JP2005501405A (ja) 2005-01-13
ATE369626T1 (de) 2007-08-15
US20070063202A1 (en) 2007-03-22
KR20040036920A (ko) 2004-05-03
WO2003019617A2 (de) 2003-03-06
US20040256349A1 (en) 2004-12-23
EP1419530B1 (de) 2007-08-08
DE50210653D1 (de) 2007-09-20
KR100940943B1 (ko) 2010-02-08

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