AU2002342623A1 - Method for producing electronic components - Google Patents

Method for producing electronic components

Info

Publication number
AU2002342623A1
AU2002342623A1 AU2002342623A AU2002342623A AU2002342623A1 AU 2002342623 A1 AU2002342623 A1 AU 2002342623A1 AU 2002342623 A AU2002342623 A AU 2002342623A AU 2002342623 A AU2002342623 A AU 2002342623A AU 2002342623 A1 AU2002342623 A1 AU 2002342623A1
Authority
AU
Australia
Prior art keywords
electronic components
die
sensor
emitting device
support
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002342623A
Other languages
English (en)
Other versions
AU2002342623A8 (en
Inventor
Florian Bieck
Jurgen Leib
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Schott AG
Original Assignee
Schott Glaswerke AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE10141571A external-priority patent/DE10141571B8/de
Priority claimed from DE10222960A external-priority patent/DE10222960A1/de
Application filed by Schott Glaswerke AG filed Critical Schott Glaswerke AG
Publication of AU2002342623A8 publication Critical patent/AU2002342623A8/xx
Publication of AU2002342623A1 publication Critical patent/AU2002342623A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/804—Containers or encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/407—Optical elements or arrangements indirectly associated with the devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)
  • Ceramic Capacitors (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Pressure Sensors (AREA)
  • Optical Couplings Of Light Guides (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
  • Dicing (AREA)
  • Electroluminescent Light Sources (AREA)
AU2002342623A 2001-08-24 2002-08-26 Method for producing electronic components Abandoned AU2002342623A1 (en)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
DE10141558.3 2001-08-24
DE10141571A DE10141571B8 (de) 2001-08-24 2001-08-24 Verfahren zum Zusammenbau eines Halbleiterbauelements und damit hergestellte integrierte Schaltungsanordnung, die für dreidimensionale, mehrschichtige Schaltungen geeignet ist
DE10141571.0 2001-08-24
DE10141558 2001-08-24
DE10222960.0 2002-05-23
DE10222960A DE10222960A1 (de) 2002-05-23 2002-05-23 Verfahren zur Herstellung von elektronischen Bauelementen
PCT/EP2002/009497 WO2003019617A2 (de) 2001-08-24 2002-08-26 Verfahren zur herstellung von elektronischen bauelementen

Publications (2)

Publication Number Publication Date
AU2002342623A8 AU2002342623A8 (en) 2003-03-10
AU2002342623A1 true AU2002342623A1 (en) 2003-03-10

Family

ID=27214576

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002342623A Abandoned AU2002342623A1 (en) 2001-08-24 2002-08-26 Method for producing electronic components

Country Status (9)

Country Link
US (2) US7160478B2 (enExample)
EP (1) EP1419530B1 (enExample)
JP (1) JP4571405B2 (enExample)
KR (2) KR100986816B1 (enExample)
AT (1) ATE369626T1 (enExample)
AU (1) AU2002342623A1 (enExample)
DE (1) DE50210653D1 (enExample)
SG (1) SG161099A1 (enExample)
WO (1) WO2003019617A2 (enExample)

Families Citing this family (51)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7224856B2 (en) * 2001-10-23 2007-05-29 Digital Optics Corporation Wafer based optical chassis and associated methods
US7074638B2 (en) 2002-04-22 2006-07-11 Fuji Photo Film Co., Ltd. Solid-state imaging device and method of manufacturing said solid-state imaging device
EP1686618A3 (en) * 2002-07-29 2007-01-03 Fuji Photo Film Co., Ltd. Solid-state imaging device and method of manufacturing the same
JP3896951B2 (ja) * 2002-11-13 2007-03-22 松下電器産業株式会社 光通信用送受光モジュール
JP2005241457A (ja) * 2004-02-26 2005-09-08 Hamamatsu Photonics Kk 赤外線センサ及びその製造方法
JP4670251B2 (ja) * 2004-04-13 2011-04-13 日亜化学工業株式会社 発光装置
TWM271321U (en) * 2004-09-10 2005-07-21 Aiptek Int Inc Flip-chip packaging device
US20060131710A1 (en) * 2004-12-21 2006-06-22 Taiwan Semiconductor Manufacturing Company, Ltd. Advanced cavity structure for wafer level chip scale package
US20070197922A1 (en) * 2006-02-17 2007-08-23 Honeywell International Inc. Disposable pressure sensor systems and packages therefor
EP1870936A1 (fr) 2006-06-19 2007-12-26 STMicroelectronics (Rousset) SAS Procédé de fabrication de lentilles, notamment pour imageur intégré
JPWO2008023826A1 (ja) * 2006-08-25 2010-01-14 三洋電機株式会社 半導体装置及びその製造方法
JP5270349B2 (ja) * 2006-08-25 2013-08-21 セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー 半導体装置及びその製造方法
WO2008023827A1 (en) * 2006-08-25 2008-02-28 Sanyo Electric Co., Ltd. Semiconductor device
DE102007038465A1 (de) * 2006-11-20 2008-05-21 Awaiba Gmbh Kameramodul auf Waferebene
JP4958273B2 (ja) * 2007-01-23 2012-06-20 オンセミコンダクター・トレーディング・リミテッド 発光装置及びその製造方法
US7576425B2 (en) * 2007-01-25 2009-08-18 Xintec, Inc. Conducting layer in chip package module
TWI353667B (en) * 2007-07-13 2011-12-01 Xintec Inc Image sensor package and fabrication method thereo
TWI345830B (en) * 2007-08-08 2011-07-21 Xintec Inc Image sensor package and fabrication method thereof
US8772919B2 (en) 2007-08-08 2014-07-08 Wen-Cheng Chien Image sensor package with trench insulator and fabrication method thereof
US7880293B2 (en) * 2008-03-25 2011-02-01 Stats Chippac, Ltd. Wafer integrated with permanent carrier and method therefor
DE102008025756B4 (de) * 2008-05-29 2023-02-23 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiteranordnung
KR100950915B1 (ko) * 2008-06-17 2010-04-01 삼성전기주식회사 웨이퍼 레벨 카메라 모듈 및 그 제조방법
JP5186295B2 (ja) * 2008-06-30 2013-04-17 富士フイルム株式会社 撮像モジュール及びその製造方法並びに内視鏡装置
WO2010091391A2 (en) 2009-02-09 2010-08-12 Semprius, Inc. Concentrator-type photovoltaic (cpv) modules, receivers and sub-receivers and methods of forming same
JP2010245292A (ja) * 2009-04-06 2010-10-28 Panasonic Corp 光学デバイス、電子機器、及びその製造方法
US8367454B2 (en) * 2009-04-28 2013-02-05 Stmicroelectronics (Crolles 2) Sas Image capture unit
DE102009024425B4 (de) * 2009-06-09 2011-11-17 Diehl Aerospace Gmbh Anschlusseinrichtung für eine lichtemittierende Diode und Beleuchtungseinheit
WO2011108664A1 (ja) * 2010-03-03 2011-09-09 有限会社Ｍｔｅｃ 光半導体装置
JP5558189B2 (ja) * 2010-04-26 2014-07-23 浜松ホトニクス株式会社 赤外線センサ及びその製造方法
US20120154945A1 (en) * 2010-12-16 2012-06-21 William Mark Hiatt Optical apertures and applications thereof
EP2472579A1 (de) * 2010-12-30 2012-07-04 Baumer Innotec AG Kontaktierung von Bauelementen auf Substraten
US9252172B2 (en) 2011-05-31 2016-02-02 Stats Chippac, Ltd. Semiconductor device and method of forming EWLB semiconductor package with vertical interconnect structure and cavity region
SG191817A1 (en) * 2011-07-19 2013-08-30 Heptagon Micro Optics Pte Ltd Opto -electronic modules and methods of manufacturing the same
US9564413B2 (en) 2011-09-15 2017-02-07 STATS ChipPAC Pte. Ltd. Semiconductor device and method of forming semiconductor die with active region responsive to external stimulus
US9553162B2 (en) 2011-09-15 2017-01-24 STATS ChipPAC Pte. Ltd. Semiconductor device and method of forming semiconductor die with active region responsive to external stimulus
US20140264693A1 (en) * 2013-03-12 2014-09-18 Optiz, Inc. Cover-Free Sensor Module And Method Of Making Same
US9575722B2 (en) 2013-03-14 2017-02-21 International Business Machines Corporation Software interface for a specialized hardward device
US9431315B2 (en) * 2013-12-26 2016-08-30 Agency For Science, Technology And Research Chemical sensor package for highly pressured environment
US9481572B2 (en) 2014-07-17 2016-11-01 Texas Instruments Incorporated Optical electronic device and method of fabrication
US9293422B1 (en) 2014-09-26 2016-03-22 Texas Instruments Incorporated Optoelectronic packages having magnetic field cancelation
US9429727B2 (en) * 2014-11-06 2016-08-30 Sae Magnetics (H.K.) Ltd. Wafer level packaged optical subassembly and transceiver module having same
US9543347B2 (en) 2015-02-24 2017-01-10 Optiz, Inc. Stress released image sensor package structure and method
WO2017105581A2 (en) 2015-10-02 2017-06-22 Semprius, Inc. Wafer-integrated, ultra-low profile concentrated photovoltaics (cpv) for space applications
CN109417269B (zh) * 2016-04-29 2021-02-05 菲尼萨公司 玻璃组件上的接口芯片
US10522505B2 (en) 2017-04-06 2019-12-31 Advanced Semiconductor Engineering, Inc. Semiconductor device package and method for manufacturing the same
DE102017213065B3 (de) 2017-04-13 2018-07-05 Christian-Albrechts-Universität Zu Kiel Verfahren zur Herstellung von plankonvexen Linsenelementen und zur Herstellung eines gehäusten Bauelements auf Waferebene
EP3997428B1 (de) * 2019-07-09 2025-01-29 Heimann Sensor GmbH Verfahren zum herstellen eines hochauflösenden thermischen infrarot-sensor arrays in einem vakuumgefüllten waferlevel gehäuse
US11862749B2 (en) * 2019-12-06 2024-01-02 Adesto Technologies Corporation Integrated module assembly for optical integrated circuits
US11329035B2 (en) 2020-04-16 2022-05-10 International Business Machines Corporation Tetherless chip module
IL308408A (en) 2021-05-10 2024-01-01 Purdue Research Foundation Semiconductor system with waveguide assembly with rf signal impedance controllable by applied electromagnetic radiation
JP7176788B1 (ja) 2021-06-02 2022-11-22 サンテック株式会社 光デバイス、光デバイスの製造方法、及び光デバイスチップの製造方法

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04145403A (ja) * 1990-10-05 1992-05-19 Seiko Giken:Kk 多芯リボンテープ光ファイバ用分岐合流器およびその製造方法
US5259054A (en) * 1992-01-10 1993-11-02 At&T Bell Laboratories Self-aligned optical subassembly
US5515502A (en) * 1993-09-30 1996-05-07 Sybase, Inc. Data backup system with methods for stripe affinity backup to multiple archive devices
US5500540A (en) * 1994-04-15 1996-03-19 Photonics Research Incorporated Wafer scale optoelectronic package
JP3091903B2 (ja) * 1994-08-17 2000-09-25 セイコーインスツルメンツ株式会社 アバランシェ・フォト・ダイオード及びその製造方法
JPH09199736A (ja) * 1996-01-16 1997-07-31 Olympus Optical Co Ltd 光センサモジュール
KR100329246B1 (ko) * 1996-08-27 2002-03-18 타테이시 요시오 마이크로 릴레이 및 그 제조 방법
US5798557A (en) * 1996-08-29 1998-08-25 Harris Corporation Lid wafer bond packaging and micromachining
US6235141B1 (en) * 1996-09-27 2001-05-22 Digital Optics Corporation Method of mass producing and packaging integrated optical subsystems
US6096155A (en) * 1996-09-27 2000-08-01 Digital Optics Corporation Method of dicing wafer level integrated multiple optical elements
US5761350A (en) * 1997-01-22 1998-06-02 Koh; Seungug Method and apparatus for providing a seamless electrical/optical multi-layer micro-opto-electro-mechanical system assembly
US6198168B1 (en) * 1998-01-20 2001-03-06 Micron Technologies, Inc. Integrated circuits using high aspect ratio vias through a semiconductor wafer and method for forming same
IL123207A0 (en) 1998-02-06 1998-09-24 Shellcase Ltd Integrated circuit device
US6328482B1 (en) * 1998-06-08 2001-12-11 Benjamin Bin Jian Multilayer optical fiber coupler
US6566745B1 (en) * 1999-03-29 2003-05-20 Imec Vzw Image sensor ball grid array package and the fabrication thereof
DE19916572A1 (de) 1999-04-13 2000-10-26 Siemens Ag Optisches Halbleiterbauelement mit optisch transparenter Schutzschicht
US6243508B1 (en) * 1999-06-01 2001-06-05 Picolight Incorporated Electro-opto-mechanical assembly for coupling a light source or receiver to an optical waveguide
IL133453A0 (en) 1999-12-10 2001-04-30 Shellcase Ltd Methods for producing packaged integrated circuit devices and packaged integrated circuit devices produced thereby
US6351027B1 (en) 2000-02-29 2002-02-26 Agilent Technologies, Inc. Chip-mounted enclosure
JP3713418B2 (ja) * 2000-05-30 2005-11-09 光正 小柳 ３次元画像処理装置の製造方法
US6556349B2 (en) * 2000-12-27 2003-04-29 Honeywell International Inc. Variable focal length micro lens array field curvature corrector
US6909554B2 (en) * 2000-12-27 2005-06-21 Finisar Corporation Wafer integration of micro-optics
US6635941B2 (en) * 2001-03-21 2003-10-21 Canon Kabushiki Kaisha Structure of semiconductor device with improved reliability
US6646807B2 (en) * 2001-06-19 2003-11-11 Rohm Co., Ltd. Lens array unit and process for making lens array
US6967124B1 (en) * 2001-06-19 2005-11-22 Amkor Technology, Inc. Imprinted integrated circuit substrate and method for imprinting an integrated circuit substrate
DE10222959B4 (de) 2002-05-23 2007-12-13 Schott Ag Mikro-elektromechanisches Bauelement und Verfahren zur Herstellung von mikro-elektromechanischen Bauelementen
DE10141571B8 (de) 2001-08-24 2005-05-25 Schott Ag Verfahren zum Zusammenbau eines Halbleiterbauelements und damit hergestellte integrierte Schaltungsanordnung, die für dreidimensionale, mehrschichtige Schaltungen geeignet ist
DE10222960A1 (de) 2002-05-23 2003-12-11 Schott Glas Verfahren zur Herstellung von elektronischen Bauelementen
US6974966B1 (en) * 2002-01-16 2005-12-13 Vijaysekhar Jayaraman Multiple epitaxial region wafers with optical connectivity

Also Published As

Publication number Publication date
SG161099A1 (en) 2010-05-27
WO2003019617A3 (de) 2004-01-22
KR20040036920A (ko) 2004-05-03
KR20090115818A (ko) 2009-11-06
KR100940943B1 (ko) 2010-02-08
JP2005501405A (ja) 2005-01-13
US20040256349A1 (en) 2004-12-23
US20070063202A1 (en) 2007-03-22
AU2002342623A8 (en) 2003-03-10
EP1419530B1 (de) 2007-08-08
KR100986816B1 (ko) 2010-10-12
ATE369626T1 (de) 2007-08-15
DE50210653D1 (de) 2007-09-20
EP1419530A2 (de) 2004-05-19
US8114304B2 (en) 2012-02-14
JP4571405B2 (ja) 2010-10-27
US7160478B2 (en) 2007-01-09
WO2003019617A2 (de) 2003-03-06

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase