JP4563483B2 - 半導体チップ・パッケージ組立体 - Google Patents
半導体チップ・パッケージ組立体 Download PDFInfo
- Publication number
- JP4563483B2 JP4563483B2 JP2008511413A JP2008511413A JP4563483B2 JP 4563483 B2 JP4563483 B2 JP 4563483B2 JP 2008511413 A JP2008511413 A JP 2008511413A JP 2008511413 A JP2008511413 A JP 2008511413A JP 4563483 B2 JP4563483 B2 JP 4563483B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor chip
- package assembly
- chip package
- polyimide
- paste
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims description 17
- 239000000463 material Substances 0.000 claims description 36
- 239000004642 Polyimide Substances 0.000 claims description 27
- 229920001721 polyimide Polymers 0.000 claims description 27
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 19
- 239000010703 silicon Substances 0.000 claims description 18
- 229910052710 silicon Inorganic materials 0.000 claims description 18
- 239000007787 solid Substances 0.000 claims description 9
- 239000011148 porous material Substances 0.000 claims description 8
- 239000002243 precursor Substances 0.000 claims description 8
- 239000000565 sealant Substances 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 239000010949 copper Substances 0.000 claims description 5
- 229920001187 thermosetting polymer Polymers 0.000 claims description 5
- 230000008018 melting Effects 0.000 claims description 3
- 238000002844 melting Methods 0.000 claims description 3
- 239000000155 melt Substances 0.000 claims description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 2
- 239000002861 polymer material Substances 0.000 claims 1
- 238000000034 method Methods 0.000 description 13
- 238000007789 sealing Methods 0.000 description 10
- 229920000642 polymer Polymers 0.000 description 9
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 8
- 239000002131 composite material Substances 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 238000001465 metallisation Methods 0.000 description 8
- 239000000126 substance Substances 0.000 description 8
- 238000002073 fluorescence micrograph Methods 0.000 description 5
- 238000010297 mechanical methods and process Methods 0.000 description 5
- 230000005226 mechanical processes and functions Effects 0.000 description 5
- 230000035515 penetration Effects 0.000 description 5
- 239000000975 dye Substances 0.000 description 4
- 238000000151 deposition Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000004806 packaging method and process Methods 0.000 description 3
- 239000000725 suspension Substances 0.000 description 3
- 239000000969 carrier Substances 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000004952 Polyamide Substances 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007850 fluorescent dye Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000005470 impregnation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 239000012812 sealant material Substances 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 239000004416 thermosoftening plastic Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/147—Semiconductor insulating substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/486—Via connections through the substrate with or without pins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Description
面図を示す。図6は、固体金属400でライニングされ、ポリイミド溶液200で封止さ
れたペースト充填ビア300を示す。次に、ビアを硬化させ、化学機械プロセスに供して、その結果、シリコン・ウエーハ100の主表面と同一平面にある高分子層としてのポリイミド層が得られる。
12:Marimid(登録商標)層
100:ペースト充填ビア、シリコン・ウエーハ
200:ポリイミド溶液、ポリマー封止キャップ
300:ペースト充填ビア、ペースト
310:構造体
320:複合体、ポリイミド・シール
350:ビア
400:固体金属、BEOL
500:底部シール
605:一次熱源
600:機械式チャック
610:供給管
620:ボウル
625:接点
630:供給チャンバ
635:ピン
640:バルブ
650:チャンバ
670:出力ポート
690:支持回転軸
Claims (7)
- シリコン基板と、
少なくとも1つの半導体チップと、
少なくとも1つの露出端部とその中に充填された多孔質材料とを有する、前記シリコン基板内の少なくとも1つの電気伝導性ビアと、
リフローされて前記少なくとも1つの電気導電性ビアの前記多孔質材料内へ浸入し、前記多孔質材料を封止する、高分子材料を含むシーラントと、
を含む、半導体チップ・パッケージ組立体。 - 前記高分子材料が、ポリイミド材料又は高い熱安定性の熱硬化性材料を含む、請求項1に記載の半導体チップ・パッケージ組立体。
- 前記高分子材料が、ポリイミド前駆体溶液を含む、請求項1に記載の半導体チップ・パッケージ組立体。
- 前記ポリイミド前駆体溶液が、高濃度の固形分を含み、1cPから150cPまでの粘度を有する、請求項3に記載の半導体チップ・パッケージ組立体。
- 前記ポリイミド材料が、その前駆体状態において低粘度及び低融点の熱硬化性材料である、請求項2に記載の半導体チップ・パッケージ組立体。
- 前記熱安定性の熱硬化性材料が、130℃〜150℃の温度で融解して水より低い粘度となる、請求項2に記載の半導体チップ・パッケージ組立体。
- 前記シーラントが堆積された銅被覆を含む、請求項1に記載の半導体チップ・パッケージ組立体。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/908,480 US7199450B2 (en) | 2005-05-13 | 2005-05-13 | Materials and method to seal vias in silicon substrates |
PCT/US2006/018458 WO2006124607A2 (en) | 2005-05-13 | 2006-05-12 | Materials and method to seal vias in silicon substrates |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2008541460A JP2008541460A (ja) | 2008-11-20 |
JP2008541460A5 JP2008541460A5 (ja) | 2009-07-23 |
JP4563483B2 true JP4563483B2 (ja) | 2010-10-13 |
Family
ID=37418363
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008511413A Expired - Fee Related JP4563483B2 (ja) | 2005-05-13 | 2006-05-12 | 半導体チップ・パッケージ組立体 |
Country Status (6)
Country | Link |
---|---|
US (1) | US7199450B2 (ja) |
EP (1) | EP1883961A4 (ja) |
JP (1) | JP4563483B2 (ja) |
CN (1) | CN101176203B (ja) |
TW (1) | TWI406365B (ja) |
WO (1) | WO2006124607A2 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090083977A1 (en) * | 2007-09-28 | 2009-04-02 | Andre Hanke | Method for Filling Via Holes in Semiconductor Substrates |
US9666514B2 (en) | 2015-04-14 | 2017-05-30 | Invensas Corporation | High performance compliant substrate |
CN110402616B (zh) | 2016-11-18 | 2023-04-04 | 申泰公司 | 填充材料以及基板通孔的填充方法 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4126758A (en) * | 1973-12-03 | 1978-11-21 | Raychem Corporation | Method for sealing integrated circuit components with heat recoverable cap and resulting package |
US4880684A (en) * | 1988-03-11 | 1989-11-14 | International Business Machines Corporation | Sealing and stress relief layers and use thereof |
US5139851A (en) * | 1988-03-11 | 1992-08-18 | International Business Machines Corporation | Low dielectric composite substrate |
JPH02106956A (ja) * | 1988-10-17 | 1990-04-19 | Hitachi Ltd | 半導体装置及びその製造方法 |
JPH05198697A (ja) * | 1992-01-20 | 1993-08-06 | Fujitsu Ltd | シリコン基板金属ビア形成方法およびマルチチップモジュール製造方法 |
US5904502A (en) * | 1997-09-04 | 1999-05-18 | International Business Machines Corporation | Multiple 3-dimensional semiconductor device processing method and apparatus |
US5998292A (en) | 1997-11-12 | 1999-12-07 | International Business Machines Corporation | Method for making three dimensional circuit integration |
US6100114A (en) * | 1998-08-10 | 2000-08-08 | International Business Machines Corporation | Encapsulation of solder bumps and solder connections |
US6555762B2 (en) * | 1999-07-01 | 2003-04-29 | International Business Machines Corporation | Electronic package having substrate with electrically conductive through holes filled with polymer and conductive composition |
JP4576728B2 (ja) * | 2001-03-06 | 2010-11-10 | ソニー株式会社 | 導電性ぺースト、プリント配線基板とその製造方法および半導体装置とその製造方法 |
US6593644B2 (en) | 2001-04-19 | 2003-07-15 | International Business Machines Corporation | System of a package fabricated on a semiconductor or dielectric wafer with wiring on one face, vias extending through the wafer, and external connections on the opposing face |
JP3993458B2 (ja) * | 2002-04-17 | 2007-10-17 | 株式会社東芝 | 半導体装置 |
-
2005
- 2005-05-13 US US10/908,480 patent/US7199450B2/en active Active
-
2006
- 2006-05-05 TW TW095116152A patent/TWI406365B/zh active
- 2006-05-12 CN CN2006800162315A patent/CN101176203B/zh active Active
- 2006-05-12 WO PCT/US2006/018458 patent/WO2006124607A2/en active Application Filing
- 2006-05-12 JP JP2008511413A patent/JP4563483B2/ja not_active Expired - Fee Related
- 2006-05-12 EP EP06759690A patent/EP1883961A4/en not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
EP1883961A4 (en) | 2012-12-05 |
US20060255480A1 (en) | 2006-11-16 |
JP2008541460A (ja) | 2008-11-20 |
WO2006124607A3 (en) | 2007-04-12 |
TWI406365B (zh) | 2013-08-21 |
CN101176203A (zh) | 2008-05-07 |
TW200707674A (en) | 2007-02-16 |
US7199450B2 (en) | 2007-04-03 |
EP1883961A2 (en) | 2008-02-06 |
WO2006124607A2 (en) | 2006-11-23 |
CN101176203B (zh) | 2011-02-09 |
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