JP4560362B2 - センサおよびその製造方法 - Google Patents
センサおよびその製造方法 Download PDFInfo
- Publication number
- JP4560362B2 JP4560362B2 JP2004271804A JP2004271804A JP4560362B2 JP 4560362 B2 JP4560362 B2 JP 4560362B2 JP 2004271804 A JP2004271804 A JP 2004271804A JP 2004271804 A JP2004271804 A JP 2004271804A JP 4560362 B2 JP4560362 B2 JP 4560362B2
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- JP
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- Prior art keywords
- porous body
- sensor
- tin oxide
- region
- pore
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title description 12
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 43
- 229910001887 tin oxide Inorganic materials 0.000 claims description 43
- 239000000758 substrate Substances 0.000 claims description 31
- 239000010409 thin film Substances 0.000 claims description 30
- 239000013081 microcrystal Substances 0.000 claims description 15
- 238000009826 distribution Methods 0.000 claims description 12
- 238000001179 sorption measurement Methods 0.000 claims description 12
- 239000004065 semiconductor Substances 0.000 claims description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 9
- YBJHBAHKTGYVGT-ZKWXMUAHSA-N (+)-Biotin Chemical compound N1C(=O)N[C@@H]2[C@H](CCCCC(=O)O)SC[C@@H]21 YBJHBAHKTGYVGT-ZKWXMUAHSA-N 0.000 claims description 8
- 230000005669 field effect Effects 0.000 claims description 8
- 238000002441 X-ray diffraction Methods 0.000 claims description 7
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 5
- 229960002685 biotin Drugs 0.000 claims description 4
- 235000020958 biotin Nutrition 0.000 claims description 4
- 239000011616 biotin Substances 0.000 claims description 4
- 230000005685 electric field effect Effects 0.000 claims description 3
- 239000011148 porous material Substances 0.000 description 67
- 239000010408 film Substances 0.000 description 33
- 238000000034 method Methods 0.000 description 32
- 239000000243 solution Substances 0.000 description 22
- 238000006243 chemical reaction Methods 0.000 description 21
- 239000000126 substance Substances 0.000 description 21
- 239000004094 surface-active agent Substances 0.000 description 17
- 239000007789 gas Substances 0.000 description 16
- 238000001514 detection method Methods 0.000 description 14
- 239000013076 target substance Substances 0.000 description 12
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 10
- 239000000463 material Substances 0.000 description 10
- 230000008859 change Effects 0.000 description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 9
- 239000002243 precursor Substances 0.000 description 8
- 239000002904 solvent Substances 0.000 description 7
- 108090001008 Avidin Proteins 0.000 description 6
- 230000007613 environmental effect Effects 0.000 description 6
- 230000035945 sensitivity Effects 0.000 description 6
- 238000012360 testing method Methods 0.000 description 6
- 150000003606 tin compounds Chemical class 0.000 description 6
- 238000002425 crystallisation Methods 0.000 description 5
- 230000008025 crystallization Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- DTPCFIHYWYONMD-UHFFFAOYSA-N decaethylene glycol Polymers OCCOCCOCCOCCOCCOCCOCCOCCOCCOCCO DTPCFIHYWYONMD-UHFFFAOYSA-N 0.000 description 4
- 238000001459 lithography Methods 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 238000011896 sensitive detection Methods 0.000 description 4
- HPGGPRDJHPYFRM-UHFFFAOYSA-J tin(iv) chloride Chemical class Cl[Sn](Cl)(Cl)Cl HPGGPRDJHPYFRM-UHFFFAOYSA-J 0.000 description 4
- IAYPIBMASNFSPL-UHFFFAOYSA-N Ethylene oxide Chemical group C1CO1 IAYPIBMASNFSPL-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910021627 Tin(IV) chloride Inorganic materials 0.000 description 3
- 230000009471 action Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229920000428 triblock copolymer Polymers 0.000 description 3
- 239000011882 ultra-fine particle Substances 0.000 description 3
- WBVHEZUVHTZAEB-UFLZEWODSA-N 5-[(3aS,4S,6aR)-2-oxo-1,3,3a,4,6,6a-hexahydrothieno[3,4-d]imidazol-4-yl]pentanoic acid silane Chemical compound [SiH4].OC(=O)CCCC[C@@H]1SC[C@@H]2NC(=O)N[C@H]12 WBVHEZUVHTZAEB-UFLZEWODSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 239000012620 biological material Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000003795 desorption Methods 0.000 description 2
- 238000003618 dip coating Methods 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- -1 for example Substances 0.000 description 2
- 239000000693 micelle Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000002736 nonionic surfactant Substances 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- TXUICONDJPYNPY-UHFFFAOYSA-N (1,10,13-trimethyl-3-oxo-4,5,6,7,8,9,11,12,14,15,16,17-dodecahydrocyclopenta[a]phenanthren-17-yl) heptanoate Chemical compound C1CC2CC(=O)C=C(C)C2(C)C2C1C1CCC(OC(=O)CCCCCC)C1(C)CC2 TXUICONDJPYNPY-UHFFFAOYSA-N 0.000 description 1
- CMCBDXRRFKYBDG-UHFFFAOYSA-N 1-dodecoxydodecane Chemical compound CCCCCCCCCCCCOCCCCCCCCCCCC CMCBDXRRFKYBDG-UHFFFAOYSA-N 0.000 description 1
- FDCJDKXCCYFOCV-UHFFFAOYSA-N 1-hexadecoxyhexadecane Chemical compound CCCCCCCCCCCCCCCCOCCCCCCCCCCCCCCCC FDCJDKXCCYFOCV-UHFFFAOYSA-N 0.000 description 1
- HBXWUCXDUUJDRB-UHFFFAOYSA-N 1-octadecoxyoctadecane Chemical compound CCCCCCCCCCCCCCCCCCOCCCCCCCCCCCCCCCCCC HBXWUCXDUUJDRB-UHFFFAOYSA-N 0.000 description 1
- HANWHVWXFQSQGJ-UHFFFAOYSA-N 1-tetradecoxytetradecane Chemical compound CCCCCCCCCCCCCCOCCCCCCCCCCCCCC HANWHVWXFQSQGJ-UHFFFAOYSA-N 0.000 description 1
- 102000004190 Enzymes Human genes 0.000 description 1
- 108090000790 Enzymes Proteins 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910021626 Tin(II) chloride Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229920001400 block copolymer Polymers 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000003100 immobilizing effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000001727 in vivo Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000012046 mixed solvent Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000006864 oxidative decomposition reaction Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229940063746 oxygen 20 % Drugs 0.000 description 1
- 239000008055 phosphate buffer solution Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- CCTFOFUMSKSGRK-UHFFFAOYSA-N propan-2-olate;tin(4+) Chemical compound [Sn+4].CC(C)[O-].CC(C)[O-].CC(C)[O-].CC(C)[O-] CCTFOFUMSKSGRK-UHFFFAOYSA-N 0.000 description 1
- 108090000623 proteins and genes Proteins 0.000 description 1
- 102000004169 proteins and genes Human genes 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000002174 soft lithography Methods 0.000 description 1
- 238000002336 sorption--desorption measurement Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000001119 stannous chloride Substances 0.000 description 1
- 235000011150 stannous chloride Nutrition 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- FPADWGFFPCNGDD-UHFFFAOYSA-N tetraethoxystannane Chemical compound [Sn+4].CC[O-].CC[O-].CC[O-].CC[O-] FPADWGFFPCNGDD-UHFFFAOYSA-N 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000002341 toxic gas Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
Description
本発明におけるFET式センサは、ゲート領域に、規則性を有したメソ領域の細孔構造と、細孔壁に酸化スズの微結晶を有した多孔質体を備えることを特徴とする。
本発明による、規則性を有したメソ領域の細孔構造と細孔壁に微結晶を有した薄膜状の酸化スズ多孔質体を備えるFET式センサの製造方法について説明する。
本工程では、スズ化合物、界面活性剤を溶媒に溶解させて反応溶液を調整する。
本工程では工程Aで作製した反応溶液を基板のゲート絶縁膜上に配置する。
次に、基板を、水蒸気を含む雰囲気中に保持し、多孔質体前駆体を形成する。
(工程D:界面活性剤を除去する工程)
界面活性剤を除去する方法には、一般的な方法を用いることができる。焼成処理は簡便な方法であり、温度によって細孔壁の結晶化を促す効果がある。温度が高いと酸化スズの結晶化は進行するが、細孔構造が乱れる傾向があるため、最適温度は適宜設定する。材料が高温に耐えられない場合は、超臨界流体による抽出、溶剤による抽出等を用いることも可能である。他にも、紫外光照射、オゾンによる酸化分解等様々な手法があるが多孔質構造を破壊しない方法であれば、いずれの方法も用いることが可能である。
まず、p型(100)シリコン基板上に熱酸化法により、酸化シリコン膜を形成し、ゲート絶縁膜とした。
以上、ゲート絶縁膜上に規則性を有したメソ領域の細孔構造と、細孔壁に微結晶を備えた酸化スズ多孔質体薄膜が形成できることを確認した。
12 ソース領域
13 ドレイン領域
14 ゲート絶縁膜
15 ゲート領域
21 多孔質体
22 細孔
23 細孔壁
Claims (3)
- 半導体基板にソース領域、ドレイン領域およびゲート領域を備えてなる電界効果トランジスタ式センサにおいて、メソ細孔を有し且つ該メソ細孔の壁面に酸化スズの微結晶を含んでなる多孔質体を該ゲート領域に備え、且つ、該多孔質体がX線回折分析において4.9nm以上の構造周期性に対応する角度領域に少なくとも一つの回折ピークを有し、前記微結晶の平均結晶子径が2.7nm以上6nm以下であり、前記メソ細孔の壁面にビオチンが固定されていることを特徴とする電界効果トランジスタ式センサ。
- 前記メソ細孔の径の分布が窒素ガス吸着測定により求められたものであり、該分布が単一の極大値を有し、且つ60%以上の前記メソ細孔の径が該極大値に対してプラスマイナス5ナノメートル以内の範囲に含まれることを特徴とする請求項1に記載の電界効果トランジスタ式センサ。
- 前記多孔質体が薄膜状であることを特徴とする請求項1乃至2のいずれかに記載の電界効果トランジスタ式センサ。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004271804A JP4560362B2 (ja) | 2004-09-17 | 2004-09-17 | センサおよびその製造方法 |
US11/227,175 US20060060924A1 (en) | 2004-09-17 | 2005-09-16 | Field-effect transistor and sensor, and methods of manufacturing the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004271804A JP4560362B2 (ja) | 2004-09-17 | 2004-09-17 | センサおよびその製造方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2006084417A JP2006084417A (ja) | 2006-03-30 |
JP2006084417A5 JP2006084417A5 (ja) | 2007-01-18 |
JP4560362B2 true JP4560362B2 (ja) | 2010-10-13 |
Family
ID=36073044
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004271804A Expired - Fee Related JP4560362B2 (ja) | 2004-09-17 | 2004-09-17 | センサおよびその製造方法 |
Country Status (2)
Country | Link |
---|---|
US (1) | US20060060924A1 (ja) |
JP (1) | JP4560362B2 (ja) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4438049B2 (ja) * | 2003-08-11 | 2010-03-24 | キヤノン株式会社 | 電界効果トランジスタ及びそれを用いたセンサ並びにその製造方法 |
DE102006047928A1 (de) * | 2006-10-10 | 2008-04-17 | Robert Bosch Gmbh | Verfahren zur Herstellung mindestens einer porösen Schicht |
JP5229849B2 (ja) * | 2006-10-31 | 2013-07-03 | ミツミ電機株式会社 | センサ |
KR100877246B1 (ko) | 2007-05-03 | 2009-01-13 | 주식회사 바이오트론 | Fet 센서 및 그 제조방법 |
KR101465961B1 (ko) | 2007-10-09 | 2014-12-01 | 삼성전자주식회사 | 유전자 검출 방법 및 장치 |
EP2141491A1 (de) | 2008-07-02 | 2010-01-06 | Micronas GmbH | Gassensor |
JP5240767B2 (ja) * | 2008-09-05 | 2013-07-17 | 富士電機株式会社 | 薄膜ガスセンサおよびその製造方法 |
DE102009002060B4 (de) * | 2009-03-31 | 2023-08-03 | Endress+Hauser Conducta Gmbh+Co. Kg | Ionensensitiver Sensor mit Mehrfachschichtaufbau im sensitiven Bereich sowie Verfahren zur Herstellung eines solchen Sensors |
DE102011002854A1 (de) * | 2010-08-10 | 2012-02-16 | Robert Bosch Gmbh | Feldeffekt-Gassensor, Verfahren zur Herstellung eines Feldeffekt-Gassensors und Verfahren zur Detektion von Gas |
US8450131B2 (en) | 2011-01-11 | 2013-05-28 | Nanohmics, Inc. | Imprinted semiconductor multiplex detection array |
DE102012213625A1 (de) * | 2012-08-02 | 2014-02-06 | Robert Bosch Gmbh | Gassensor zur Bestimmung von in einem Gasgemisch enthaltenen Substanzen und Verfahren zum Herstellen eines solchen |
KR101488623B1 (ko) * | 2013-12-11 | 2015-02-12 | 단국대학교 천안캠퍼스 산학협력단 | 산화물 박막 트랜지스터 제조방법 |
CN110333272A (zh) * | 2019-08-21 | 2019-10-15 | 业成科技(成都)有限公司 | 湿度感测器及其制造方法 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6157847A (ja) * | 1984-08-29 | 1986-03-24 | Sharp Corp | 電界効果型湿度センサ |
JPH04361149A (ja) * | 1991-06-06 | 1992-12-14 | Tokin Corp | 湿度センサ |
JP2002308623A (ja) * | 2001-02-06 | 2002-10-23 | Canon Inc | 細孔構造を有する薄膜及び細孔構造体の製造方法 |
JP2003301166A (ja) * | 2002-04-11 | 2003-10-21 | Canon Inc | 撥水性材料膜および撥水性材料膜の製造方法 |
WO2003099941A1 (fr) * | 2002-05-24 | 2003-12-04 | Canon Kabushiki Kaisha | Materiau colore et procede de production de ce materiau |
JP2004091318A (ja) * | 2002-08-09 | 2004-03-25 | Canon Inc | 金属酸化物を含有する膜及びその製造方法 |
JP2004191341A (ja) * | 2002-12-13 | 2004-07-08 | Canon Inc | 分子認識素子、これを用いたバイオセンサ、及びその製造方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA1208424A (en) * | 1983-02-03 | 1986-07-29 | Sai Sakai | Gas sensor |
US5140393A (en) * | 1985-10-08 | 1992-08-18 | Sharp Kabushiki Kaisha | Sensor device |
US5633081A (en) * | 1986-03-24 | 1997-05-27 | Ensci Inc. | Coated porous substrates |
JPS6478141A (en) * | 1987-09-21 | 1989-03-23 | Toshiba Corp | Field effect type solution sensor |
US5776425A (en) * | 1995-04-26 | 1998-07-07 | National Science Council | Method for preparing porous tin oxide monolith with high specific surface area and controlled degree of transparency |
JP4250287B2 (ja) * | 1999-01-07 | 2009-04-08 | キヤノン株式会社 | シリカメソ構造体の製造方法 |
JP4438049B2 (ja) * | 2003-08-11 | 2010-03-24 | キヤノン株式会社 | 電界効果トランジスタ及びそれを用いたセンサ並びにその製造方法 |
-
2004
- 2004-09-17 JP JP2004271804A patent/JP4560362B2/ja not_active Expired - Fee Related
-
2005
- 2005-09-16 US US11/227,175 patent/US20060060924A1/en not_active Abandoned
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6157847A (ja) * | 1984-08-29 | 1986-03-24 | Sharp Corp | 電界効果型湿度センサ |
JPH04361149A (ja) * | 1991-06-06 | 1992-12-14 | Tokin Corp | 湿度センサ |
JP2002308623A (ja) * | 2001-02-06 | 2002-10-23 | Canon Inc | 細孔構造を有する薄膜及び細孔構造体の製造方法 |
JP2003301166A (ja) * | 2002-04-11 | 2003-10-21 | Canon Inc | 撥水性材料膜および撥水性材料膜の製造方法 |
WO2003099941A1 (fr) * | 2002-05-24 | 2003-12-04 | Canon Kabushiki Kaisha | Materiau colore et procede de production de ce materiau |
JP2004091318A (ja) * | 2002-08-09 | 2004-03-25 | Canon Inc | 金属酸化物を含有する膜及びその製造方法 |
JP2004191341A (ja) * | 2002-12-13 | 2004-07-08 | Canon Inc | 分子認識素子、これを用いたバイオセンサ、及びその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JP2006084417A (ja) | 2006-03-30 |
US20060060924A1 (en) | 2006-03-23 |
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