JPS6478141A - Field effect type solution sensor - Google Patents

Field effect type solution sensor

Info

Publication number
JPS6478141A
JPS6478141A JP23477487A JP23477487A JPS6478141A JP S6478141 A JPS6478141 A JP S6478141A JP 23477487 A JP23477487 A JP 23477487A JP 23477487 A JP23477487 A JP 23477487A JP S6478141 A JPS6478141 A JP S6478141A
Authority
JP
Japan
Prior art keywords
sensor
shell
inorg
holes
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP23477487A
Other languages
Japanese (ja)
Inventor
Tadashi Sakai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP23477487A priority Critical patent/JPS6478141A/en
Publication of JPS6478141A publication Critical patent/JPS6478141A/en
Pending legal-status Critical Current

Links

Landscapes

  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)

Abstract

PURPOSE:To obtain the structure of a sensor which is capable of making stable measurement by providing the shell of a thin inorg. film having through-holes to the surface of a gate insulating film forming sensitive part apart at a certain spacing from said surface. CONSTITUTION:The shell 1 consisting of the thin inorg. film existing in the sensitive part of the sensor, i.e., on the surface of the gate insulating film apart at the certain spacing therefrom and having the through-holes 2 is formed. Silicon nitride, aluminum oxide, and the materials essentially consisting thereof are preferably used as the material of the inorg. film. The diffusion state of a sample soln. on the surface of the gate sensitive part 3 is thereby stably maintained. The output of the sensor is hardly fluctuated and is stably maintained even if the stirring state and flowing state of the sample soln. are nonuniform. The shell 1 can be formed on the element surface with high adhesive strength thereof and the durability is imparted to the shell by using the inorg. material. The sensor is capable of dealing with various sample states by changing the size of the holes 2.
JP23477487A 1987-09-21 1987-09-21 Field effect type solution sensor Pending JPS6478141A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23477487A JPS6478141A (en) 1987-09-21 1987-09-21 Field effect type solution sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23477487A JPS6478141A (en) 1987-09-21 1987-09-21 Field effect type solution sensor

Publications (1)

Publication Number Publication Date
JPS6478141A true JPS6478141A (en) 1989-03-23

Family

ID=16976157

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23477487A Pending JPS6478141A (en) 1987-09-21 1987-09-21 Field effect type solution sensor

Country Status (1)

Country Link
JP (1) JPS6478141A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006084417A (en) * 2004-09-17 2006-03-30 Canon Inc Sensor and manufacturing method therefor
JP2012503171A (en) * 2008-09-16 2012-02-02 ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツング Exhaust gas protective layer for high temperature ChemFET exhaust gas sensor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006084417A (en) * 2004-09-17 2006-03-30 Canon Inc Sensor and manufacturing method therefor
JP2012503171A (en) * 2008-09-16 2012-02-02 ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツング Exhaust gas protective layer for high temperature ChemFET exhaust gas sensor

Similar Documents

Publication Publication Date Title
JPS6472066A (en) Assay device provided with ports
FR2640382B1 (en) ELECTROCHEMICAL SENSOR WITH MICROSTRUCTURED CAPILLARY OPENINGS IN THE MEASURING ELECTRODE
FI882697A0 (en) INTEGRATED UPPVAERMBAR SENSOR.
DE69124355D1 (en) Layer circuit cathode and electrochemical cell for measuring the oxygen content of liquids
JPS6478141A (en) Field effect type solution sensor
IT8721130A0 (en) DEVICE TO MEASURE THE MODULE OF ELASTICITY AND METHODS PARTICULARLY SUITABLE FOR TESTING COMPLEMENTABLE MATERIALS.
JPS55121422A (en) Magneto-optic element
JPS562547A (en) Electric field effect semiconductor ion sensor
JPS6488146A (en) Humidity sensor
JPS57137847A (en) Chemically sensitive element and its preparation
JPS52126183A (en) Preparation of semiconductor device
JPS5664472A (en) Detector for strain by semiconductor
JPS6446639A (en) Mutagen sensor
JPS5645018A (en) Semiconductor device
JPS5566746A (en) Humidity detecting sensor
JPS5629344A (en) Semiconductor integrated circuit device and manufacture thereof
Von Chiari Investigations on Drying Sensitivity. II
ICHINOSE Recent trends in ceramic solid state devices
DE3854008D1 (en) Ceramic substrate and manufacture of the same.
Yanagida Industrial and Cultural Revolution through High-Tech Ceramics
Safonov et al. Thermodynamic Characteristics of the Compounds M sub 5 X sub 3(M= Yttrium, Zirconium; X= Silicon, Germanium)
YASUI Material design of high-purpose glass discussed
Vasilev et al. Investigation of the Thermoelectric Properties of Materials in the Ag sub 2 Te sub x Se sub 1--gx System(0. 00<= x<= 0. 5: 0. 92<= x<= 1. 00)
JPS54151880A (en) Cell for photometer
JPS6474779A (en) Magnetoelectric transducer