JP4558601B2 - 試験装置 - Google Patents

試験装置 Download PDF

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Publication number
JP4558601B2
JP4558601B2 JP2005212333A JP2005212333A JP4558601B2 JP 4558601 B2 JP4558601 B2 JP 4558601B2 JP 2005212333 A JP2005212333 A JP 2005212333A JP 2005212333 A JP2005212333 A JP 2005212333A JP 4558601 B2 JP4558601 B2 JP 4558601B2
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JP
Japan
Prior art keywords
test
coil
device under
overcurrent
avalanche breakdown
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Expired - Fee Related
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JP2005212333A
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English (en)
Japanese (ja)
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JP2007033042A (ja
JP2007033042A5 (enExample
Inventor
洋一 佐藤
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Shibasoku Co Ltd
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Shibasoku Co Ltd
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Priority to JP2005212333A priority Critical patent/JP4558601B2/ja
Publication of JP2007033042A publication Critical patent/JP2007033042A/ja
Publication of JP2007033042A5 publication Critical patent/JP2007033042A5/ja
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  • Tests Of Electronic Circuits (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
JP2005212333A 2005-07-22 2005-07-22 試験装置 Expired - Fee Related JP4558601B2 (ja)

Priority Applications (1)

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JP2005212333A JP4558601B2 (ja) 2005-07-22 2005-07-22 試験装置

Applications Claiming Priority (1)

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JP2005212333A JP4558601B2 (ja) 2005-07-22 2005-07-22 試験装置

Publications (3)

Publication Number Publication Date
JP2007033042A JP2007033042A (ja) 2007-02-08
JP2007033042A5 JP2007033042A5 (enExample) 2008-08-28
JP4558601B2 true JP4558601B2 (ja) 2010-10-06

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JP2005212333A Expired - Fee Related JP4558601B2 (ja) 2005-07-22 2005-07-22 試験装置

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JP (1) JP4558601B2 (enExample)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4853470B2 (ja) * 2007-12-18 2012-01-11 トヨタ自動車株式会社 半導体素子の試験装置及びその試験方法
JP5257110B2 (ja) * 2009-02-06 2013-08-07 富士電機株式会社 半導体試験装置
JP5258810B2 (ja) * 2010-02-17 2013-08-07 三菱電機株式会社 半導体装置の試験装置
JP5547579B2 (ja) 2010-08-02 2014-07-16 株式会社アドバンテスト 試験装置及び試験方法
JP5528998B2 (ja) 2010-12-15 2014-06-25 株式会社アドバンテスト 試験装置
JP5461379B2 (ja) 2010-12-15 2014-04-02 株式会社アドバンテスト 試験装置
WO2013016643A2 (en) * 2011-07-28 2013-01-31 Integrated Technology Corporation Damage reduction method and apparatus for destructive testing of power semiconductors
JP5742681B2 (ja) * 2011-11-18 2015-07-01 トヨタ自動車株式会社 半導体素子の試験装置及びその試験方法
JP2014048223A (ja) * 2012-09-03 2014-03-17 Toyota Motor Corp 半導体素子試験装置
JP2013092534A (ja) * 2013-01-17 2013-05-16 Fuji Electric Co Ltd 半導体試験装置
JP6207265B2 (ja) * 2013-07-04 2017-10-04 三菱電機株式会社 半導体試験装置
JP6447497B2 (ja) * 2014-03-11 2019-01-09 新東工業株式会社 被試験デバイスの検査システム、及びその操作方法
JP5939272B2 (ja) * 2014-03-28 2016-06-22 トヨタ自動車株式会社 試験装置及び試験方法
JP6398433B2 (ja) * 2014-07-30 2018-10-03 株式会社デンソー 半導体素子の検査回路および検査方法
JP6398873B2 (ja) * 2015-05-28 2018-10-03 新東工業株式会社 動特性試験装置及び動特性試験方法
JP6365425B2 (ja) * 2015-06-05 2018-08-01 株式会社デンソー 半導体素子の検査回路
JP6332165B2 (ja) 2015-06-25 2018-05-30 株式会社デンソー 半導体素子の検査装置および検査方法
CN109212401B (zh) * 2018-09-03 2020-08-25 东南大学 基于热成像技术的半导体雪崩失效分析测试方法及装置
JP7570661B2 (ja) * 2019-06-04 2024-10-22 株式会社クオルテック パワーサイクル試験装置
CN114791548B (zh) * 2022-04-13 2025-08-08 广东芯智造半导体有限公司 一种芯片端口瞬态耐压测试电路、方法及测试机

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62220877A (ja) * 1986-03-22 1987-09-29 Toshiba Corp 電力用トランジスタの試験装置
JP3523458B2 (ja) * 1996-08-12 2004-04-26 新電元工業株式会社 高アバランシェ耐量ｍｏｓｆｅｔ、及びその製造方法

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Publication number Publication date
JP2007033042A (ja) 2007-02-08

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