JP4553471B2 - 処理装置及び処理システム - Google Patents

処理装置及び処理システム Download PDF

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Publication number
JP4553471B2
JP4553471B2 JP2000284094A JP2000284094A JP4553471B2 JP 4553471 B2 JP4553471 B2 JP 4553471B2 JP 2000284094 A JP2000284094 A JP 2000284094A JP 2000284094 A JP2000284094 A JP 2000284094A JP 4553471 B2 JP4553471 B2 JP 4553471B2
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JP
Japan
Prior art keywords
gas
processing
wafer
supply port
processing container
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2000284094A
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English (en)
Japanese (ja)
Other versions
JP2002093787A (ja
JP2002093787A5 (enExample
Inventor
田 恭 子 池
林 保 男 小
島 範 昭 松
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2000284094A priority Critical patent/JP4553471B2/ja
Priority to KR1020010057477A priority patent/KR20020022579A/ko
Priority to US09/954,034 priority patent/US20020062790A1/en
Publication of JP2002093787A publication Critical patent/JP2002093787A/ja
Publication of JP2002093787A5 publication Critical patent/JP2002093787A5/ja
Application granted granted Critical
Publication of JP4553471B2 publication Critical patent/JP4553471B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
JP2000284094A 2000-09-19 2000-09-19 処理装置及び処理システム Expired - Fee Related JP4553471B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2000284094A JP4553471B2 (ja) 2000-09-19 2000-09-19 処理装置及び処理システム
KR1020010057477A KR20020022579A (ko) 2000-09-19 2001-09-18 처리 장치 및 처리 시스템
US09/954,034 US20020062790A1 (en) 2000-09-19 2001-09-18 Processing apparatus and processing system

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000284094A JP4553471B2 (ja) 2000-09-19 2000-09-19 処理装置及び処理システム

Publications (3)

Publication Number Publication Date
JP2002093787A JP2002093787A (ja) 2002-03-29
JP2002093787A5 JP2002093787A5 (enExample) 2009-03-05
JP4553471B2 true JP4553471B2 (ja) 2010-09-29

Family

ID=18768370

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000284094A Expired - Fee Related JP4553471B2 (ja) 2000-09-19 2000-09-19 処理装置及び処理システム

Country Status (3)

Country Link
US (1) US20020062790A1 (enExample)
JP (1) JP4553471B2 (enExample)
KR (1) KR20020022579A (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6770562B2 (en) * 2000-10-26 2004-08-03 Semiconductor Energy Laboratory Co., Ltd. Film formation apparatus and film formation method
KR100497607B1 (ko) 2003-02-17 2005-07-01 삼성전자주식회사 박막 형성 방법 및 박막 증착 장치
US7029536B2 (en) * 2003-03-17 2006-04-18 Tokyo Electron Limited Processing system and method for treating a substrate
WO2004088729A1 (en) * 2003-03-26 2004-10-14 Tokyo Electron Limited Chemical processing system and method
JP2009239082A (ja) * 2008-03-27 2009-10-15 Tokyo Electron Ltd ガス供給装置、処理装置及び処理方法
JP5703000B2 (ja) * 2010-12-01 2015-04-15 株式会社アルバック ラジカルクリーニング方法
KR102796031B1 (ko) 2018-07-17 2025-04-16 에이에스엠엘 네델란즈 비.브이. 입자 빔 검사 장치

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6353927A (ja) * 1986-08-25 1988-03-08 Hitachi Ltd プラズマプロセス装置
JPH01272769A (ja) * 1987-12-30 1989-10-31 Texas Instr Japan Ltd プラズマ発生装置
JP2894658B2 (ja) * 1992-01-17 1999-05-24 株式会社東芝 ドライエッチング方法およびその装置
US5976992A (en) * 1993-09-27 1999-11-02 Kabushiki Kaisha Toshiba Method of supplying excited oxygen
JPH09129603A (ja) * 1995-10-31 1997-05-16 Toshiba Corp 半導体装置の製造方法
JPH09251935A (ja) * 1996-03-18 1997-09-22 Applied Materials Inc プラズマ点火装置、プラズマを用いる半導体製造装置及び半導体装置のプラズマ点火方法
US5951771A (en) * 1996-09-30 1999-09-14 Celestech, Inc. Plasma jet system
JP2950785B2 (ja) * 1996-12-09 1999-09-20 セントラル硝子株式会社 酸化膜のドライエッチング方法
JPH10321610A (ja) * 1997-03-19 1998-12-04 Fujitsu Ltd 半導体装置の製造方法
US6213049B1 (en) * 1997-06-26 2001-04-10 General Electric Company Nozzle-injector for arc plasma deposition apparatus
JPH11135296A (ja) * 1997-07-14 1999-05-21 Applied Materials Inc マルチモードアクセスを有する真空処理チャンバ
US6352049B1 (en) * 1998-02-09 2002-03-05 Applied Materials, Inc. Plasma assisted processing chamber with separate control of species density
JP4195525B2 (ja) * 1998-05-13 2008-12-10 ジュリア・エル・ミッツェル 表面処理方法
JP2000290777A (ja) * 1999-04-07 2000-10-17 Tokyo Electron Ltd ガス処理装置、バッフル部材、及びガス処理方法
JP3645768B2 (ja) * 1999-12-07 2005-05-11 シャープ株式会社 プラズマプロセス装置
JP4232330B2 (ja) * 2000-09-22 2009-03-04 東京エレクトロン株式会社 励起ガス形成装置、処理装置及び処理方法
US6641673B2 (en) * 2000-12-20 2003-11-04 General Electric Company Fluid injector for and method of prolonged delivery and distribution of reagents into plasma
KR100476370B1 (ko) * 2002-07-19 2005-03-16 주식회사 하이닉스반도체 배치형 원자층증착장치 및 그의 인시튜 세정 방법
TW587139B (en) * 2002-10-18 2004-05-11 Winbond Electronics Corp Gas distribution system and method for the plasma gas in the chamber
EP1420080A3 (en) * 2002-11-14 2005-11-09 Applied Materials, Inc. Apparatus and method for hybrid chemical deposition processes
KR100862658B1 (ko) * 2002-11-15 2008-10-10 삼성전자주식회사 반도체 처리 시스템의 가스 주입 장치

Also Published As

Publication number Publication date
JP2002093787A (ja) 2002-03-29
KR20020022579A (ko) 2002-03-27
US20020062790A1 (en) 2002-05-30

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