KR20020022579A - 처리 장치 및 처리 시스템 - Google Patents

처리 장치 및 처리 시스템 Download PDF

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Publication number
KR20020022579A
KR20020022579A KR1020010057477A KR20010057477A KR20020022579A KR 20020022579 A KR20020022579 A KR 20020022579A KR 1020010057477 A KR1020010057477 A KR 1020010057477A KR 20010057477 A KR20010057477 A KR 20010057477A KR 20020022579 A KR20020022579 A KR 20020022579A
Authority
KR
South Korea
Prior art keywords
gas
supply port
processing
gas supply
processing container
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1020010057477A
Other languages
English (en)
Korean (ko)
Inventor
이케다교코
고바야시야스오
마츠시마노리아키
Original Assignee
히가시 데쓰로
동경 엘렉트론 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 히가시 데쓰로, 동경 엘렉트론 주식회사 filed Critical 히가시 데쓰로
Publication of KR20020022579A publication Critical patent/KR20020022579A/ko
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020010057477A 2000-09-19 2001-09-18 처리 장치 및 처리 시스템 Withdrawn KR20020022579A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2000-00284094 2000-09-19
JP2000284094A JP4553471B2 (ja) 2000-09-19 2000-09-19 処理装置及び処理システム

Publications (1)

Publication Number Publication Date
KR20020022579A true KR20020022579A (ko) 2002-03-27

Family

ID=18768370

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020010057477A Withdrawn KR20020022579A (ko) 2000-09-19 2001-09-18 처리 장치 및 처리 시스템

Country Status (3)

Country Link
US (1) US20020062790A1 (enExample)
JP (1) JP4553471B2 (enExample)
KR (1) KR20020022579A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7030475B2 (en) 2003-02-17 2006-04-18 Samsung Electronics, Co., Ltd. Method and apparatus for forming a thin film
KR101240110B1 (ko) * 2008-03-27 2013-03-11 도쿄엘렉트론가부시키가이샤 가스 공급 장치, 처리 장치, 처리 방법, 및 기억 매체

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6770562B2 (en) * 2000-10-26 2004-08-03 Semiconductor Energy Laboratory Co., Ltd. Film formation apparatus and film formation method
US7029536B2 (en) * 2003-03-17 2006-04-18 Tokyo Electron Limited Processing system and method for treating a substrate
WO2004088729A1 (en) * 2003-03-26 2004-10-14 Tokyo Electron Limited Chemical processing system and method
JP5703000B2 (ja) * 2010-12-01 2015-04-15 株式会社アルバック ラジカルクリーニング方法
WO2020016087A1 (en) * 2018-07-17 2020-01-23 Asml Netherlands B.V. Particle beam inspection apparatus

Family Cites Families (21)

* Cited by examiner, † Cited by third party
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JPS6353927A (ja) * 1986-08-25 1988-03-08 Hitachi Ltd プラズマプロセス装置
JPH01272769A (ja) * 1987-12-30 1989-10-31 Texas Instr Japan Ltd プラズマ発生装置
JP2894658B2 (ja) * 1992-01-17 1999-05-24 株式会社東芝 ドライエッチング方法およびその装置
US5976992A (en) * 1993-09-27 1999-11-02 Kabushiki Kaisha Toshiba Method of supplying excited oxygen
JPH09129603A (ja) * 1995-10-31 1997-05-16 Toshiba Corp 半導体装置の製造方法
JPH09251935A (ja) * 1996-03-18 1997-09-22 Applied Materials Inc プラズマ点火装置、プラズマを用いる半導体製造装置及び半導体装置のプラズマ点火方法
US5951771A (en) * 1996-09-30 1999-09-14 Celestech, Inc. Plasma jet system
JP2950785B2 (ja) * 1996-12-09 1999-09-20 セントラル硝子株式会社 酸化膜のドライエッチング方法
JPH10321610A (ja) * 1997-03-19 1998-12-04 Fujitsu Ltd 半導体装置の製造方法
US6213049B1 (en) * 1997-06-26 2001-04-10 General Electric Company Nozzle-injector for arc plasma deposition apparatus
JPH11135296A (ja) * 1997-07-14 1999-05-21 Applied Materials Inc マルチモードアクセスを有する真空処理チャンバ
US6352049B1 (en) * 1998-02-09 2002-03-05 Applied Materials, Inc. Plasma assisted processing chamber with separate control of species density
JP4195525B2 (ja) * 1998-05-13 2008-12-10 ジュリア・エル・ミッツェル 表面処理方法
JP2000290777A (ja) * 1999-04-07 2000-10-17 Tokyo Electron Ltd ガス処理装置、バッフル部材、及びガス処理方法
JP3645768B2 (ja) * 1999-12-07 2005-05-11 シャープ株式会社 プラズマプロセス装置
JP4232330B2 (ja) * 2000-09-22 2009-03-04 東京エレクトロン株式会社 励起ガス形成装置、処理装置及び処理方法
US6641673B2 (en) * 2000-12-20 2003-11-04 General Electric Company Fluid injector for and method of prolonged delivery and distribution of reagents into plasma
KR100476370B1 (ko) * 2002-07-19 2005-03-16 주식회사 하이닉스반도체 배치형 원자층증착장치 및 그의 인시튜 세정 방법
TW587139B (en) * 2002-10-18 2004-05-11 Winbond Electronics Corp Gas distribution system and method for the plasma gas in the chamber
EP1420080A3 (en) * 2002-11-14 2005-11-09 Applied Materials, Inc. Apparatus and method for hybrid chemical deposition processes
KR100862658B1 (ko) * 2002-11-15 2008-10-10 삼성전자주식회사 반도체 처리 시스템의 가스 주입 장치

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7030475B2 (en) 2003-02-17 2006-04-18 Samsung Electronics, Co., Ltd. Method and apparatus for forming a thin film
KR101240110B1 (ko) * 2008-03-27 2013-03-11 도쿄엘렉트론가부시키가이샤 가스 공급 장치, 처리 장치, 처리 방법, 및 기억 매체

Also Published As

Publication number Publication date
US20020062790A1 (en) 2002-05-30
JP4553471B2 (ja) 2010-09-29
JP2002093787A (ja) 2002-03-29

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Legal Events

Date Code Title Description
PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 20010918

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid