JP4545874B2 - 照明光学系、および該照明光学系を備えた露光装置と該露光装置によるデバイスの製造方法 - Google Patents

照明光学系、および該照明光学系を備えた露光装置と該露光装置によるデバイスの製造方法 Download PDF

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Publication number
JP4545874B2
JP4545874B2 JP2000100328A JP2000100328A JP4545874B2 JP 4545874 B2 JP4545874 B2 JP 4545874B2 JP 2000100328 A JP2000100328 A JP 2000100328A JP 2000100328 A JP2000100328 A JP 2000100328A JP 4545874 B2 JP4545874 B2 JP 4545874B2
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Japan
Prior art keywords
light
optical element
diffractive optical
optical system
fly
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JP2000100328A
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Japanese (ja)
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JP2001284240A (ja
JP2001284240A5 (enExample
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堅一郎 森
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Canon Inc
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Canon Inc
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Priority to JP2000100328A priority Critical patent/JP4545874B2/ja
Priority to US09/823,973 priority patent/US6903801B2/en
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Publication of JP2001284240A5 publication Critical patent/JP2001284240A5/ja
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70075—Homogenization of illumination intensity in the mask plane by using an integrator, e.g. fly's eye lens, facet mirror or glass rod, by using a diffusing optical element or by beam deflection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/701—Off-axis setting using an aperture
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/7015—Details of optical elements
    • G03F7/70158—Diffractive optical elements

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Microscoopes, Condenser (AREA)
  • Diffracting Gratings Or Hologram Optical Elements (AREA)
JP2000100328A 2000-04-03 2000-04-03 照明光学系、および該照明光学系を備えた露光装置と該露光装置によるデバイスの製造方法 Expired - Fee Related JP4545874B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2000100328A JP4545874B2 (ja) 2000-04-03 2000-04-03 照明光学系、および該照明光学系を備えた露光装置と該露光装置によるデバイスの製造方法
US09/823,973 US6903801B2 (en) 2000-04-03 2001-04-03 Illumination optical system for use in projection exposure apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000100328A JP4545874B2 (ja) 2000-04-03 2000-04-03 照明光学系、および該照明光学系を備えた露光装置と該露光装置によるデバイスの製造方法

Publications (3)

Publication Number Publication Date
JP2001284240A JP2001284240A (ja) 2001-10-12
JP2001284240A5 JP2001284240A5 (enExample) 2007-05-24
JP4545874B2 true JP4545874B2 (ja) 2010-09-15

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JP2000100328A Expired - Fee Related JP4545874B2 (ja) 2000-04-03 2000-04-03 照明光学系、および該照明光学系を備えた露光装置と該露光装置によるデバイスの製造方法

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Country Link
US (1) US6903801B2 (enExample)
JP (1) JP4545874B2 (enExample)

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TW567406B (en) * 2001-12-12 2003-12-21 Nikon Corp Diffraction optical device, refraction optical device, illuminating optical device, exposure system and exposure method
JP3826047B2 (ja) * 2002-02-13 2006-09-27 キヤノン株式会社 露光装置、露光方法、及びそれを用いたデバイス製造方法
US6784976B2 (en) * 2002-04-23 2004-08-31 Asml Holding N.V. System and method for improving line width control in a lithography device using an illumination system having pre-numerical aperture control
US6888615B2 (en) * 2002-04-23 2005-05-03 Asml Holding N.V. System and method for improving linewidth control in a lithography device by varying the angular distribution of light in an illuminator as a function of field position
US7038763B2 (en) * 2002-05-31 2006-05-02 Asml Netherlands B.V. Kit of parts for assembling an optical element, method of assembling an optical element, optical element, lithographic apparatus, and device manufacturing method
EP1367446A1 (en) * 2002-05-31 2003-12-03 ASML Netherlands B.V. Lithographic apparatus
TWI511179B (zh) * 2003-10-28 2015-12-01 尼康股份有限公司 照明光學裝置、曝光裝置、曝光方法以及元件製造方法
JP4535260B2 (ja) * 2004-10-19 2010-09-01 株式会社ニコン 照明光学装置、露光装置、および露光方法
FR2887645A1 (fr) * 2005-06-22 2006-12-29 Sagem Defense Securite Illuminateur ameliore d'un dispositif de photolithographie
JP4865270B2 (ja) * 2005-07-28 2012-02-01 キヤノン株式会社 露光装置、及びそれを用いたデバイス製造方法
KR100832194B1 (ko) * 2005-08-18 2008-05-23 세이코 엡슨 가부시키가이샤 조명 장치 및 프로젝터
JP2007052226A (ja) 2005-08-18 2007-03-01 Seiko Epson Corp 照明装置及びプロジェクタ
WO2007095307A1 (en) * 2006-02-13 2007-08-23 3M Innovative Properties Company Monocular three-dimensional imaging
JP2007242775A (ja) * 2006-03-07 2007-09-20 Canon Inc 露光装置及びデバイス製造方法
EP2009678A4 (en) * 2006-04-17 2011-04-06 Nikon Corp OPTICAL LIGHTING DEVICE, EXPOSURE DEVICE AND COMPONENT MANUFACTURING METHOD
JP2008016516A (ja) * 2006-07-03 2008-01-24 Canon Inc 露光装置
JP2008047673A (ja) * 2006-08-14 2008-02-28 Canon Inc 露光装置及びデバイス製造方法
JP2008171974A (ja) * 2007-01-11 2008-07-24 Canon Inc 光量調整装置、露光装置およびデバイス製造方法
US20080259304A1 (en) * 2007-04-20 2008-10-23 Asml Netherlands B.V. Lithographic apparatus and method
EP2238513B1 (en) 2007-12-21 2011-11-02 Carl Zeiss SMT GmbH Illumination method
JP2010123230A (ja) * 2008-11-21 2010-06-03 Sony Disc & Digital Solutions Inc 現像方法、及び現像装置
CN102466976A (zh) * 2010-11-11 2012-05-23 上海微电子装备有限公司 用于光刻设备的照明系统及方法
CN103399414B (zh) * 2013-07-22 2016-04-13 中国科学院上海光学精密机械研究所 消除衍射光学元件零级衍射光斑的方法
CN103454865A (zh) * 2013-09-05 2013-12-18 中国科学院光电技术研究所 一种深紫外光刻照明系统
JP7208787B2 (ja) * 2018-12-26 2023-01-19 キヤノン株式会社 照明光学系、露光装置、および物品の製造方法

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JP3610175B2 (ja) * 1996-10-29 2005-01-12 キヤノン株式会社 投影露光装置及びそれを用いた半導体デバイスの製造方法
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JP3264224B2 (ja) * 1997-08-04 2002-03-11 キヤノン株式会社 照明装置及びそれを用いた投影露光装置
JP3392034B2 (ja) * 1997-12-10 2003-03-31 キヤノン株式会社 照明装置及びそれを用いた投影露光装置
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JP3244076B2 (ja) * 1999-07-21 2002-01-07 株式会社ニコン 露光装置及び方法、並びに半導体素子の製造方法

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JP2001284240A (ja) 2001-10-12
US6903801B2 (en) 2005-06-07
US20010043318A1 (en) 2001-11-22

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