JP4543700B2 - 半導体発光素子 - Google Patents

半導体発光素子 Download PDF

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Publication number
JP4543700B2
JP4543700B2 JP2004055421A JP2004055421A JP4543700B2 JP 4543700 B2 JP4543700 B2 JP 4543700B2 JP 2004055421 A JP2004055421 A JP 2004055421A JP 2004055421 A JP2004055421 A JP 2004055421A JP 4543700 B2 JP4543700 B2 JP 4543700B2
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JP
Japan
Prior art keywords
film
oxide film
layer
light emitting
emitting device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2004055421A
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English (en)
Japanese (ja)
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JP2005244128A (ja
JP2005244128A5 (enExample
Inventor
孝夫 山田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nichia Corp
Original Assignee
Nichia Corp
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Publication date
Application filed by Nichia Corp filed Critical Nichia Corp
Priority to JP2004055421A priority Critical patent/JP4543700B2/ja
Publication of JP2005244128A publication Critical patent/JP2005244128A/ja
Publication of JP2005244128A5 publication Critical patent/JP2005244128A5/ja
Application granted granted Critical
Publication of JP4543700B2 publication Critical patent/JP4543700B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Led Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Lasers (AREA)
JP2004055421A 2004-02-27 2004-02-27 半導体発光素子 Expired - Fee Related JP4543700B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004055421A JP4543700B2 (ja) 2004-02-27 2004-02-27 半導体発光素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004055421A JP4543700B2 (ja) 2004-02-27 2004-02-27 半導体発光素子

Publications (3)

Publication Number Publication Date
JP2005244128A JP2005244128A (ja) 2005-09-08
JP2005244128A5 JP2005244128A5 (enExample) 2007-04-12
JP4543700B2 true JP4543700B2 (ja) 2010-09-15

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ID=35025506

Family Applications (1)

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JP2004055421A Expired - Fee Related JP4543700B2 (ja) 2004-02-27 2004-02-27 半導体発光素子

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JP (1) JP4543700B2 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102005046190A1 (de) * 2005-09-27 2007-04-05 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement mit Stromaufweitungsschicht
JP2007165612A (ja) * 2005-12-14 2007-06-28 Showa Denko Kk 窒化ガリウム系化合物半導体発光素子及びその製造方法
JP2007165611A (ja) * 2005-12-14 2007-06-28 Showa Denko Kk 窒化ガリウム系化合物半導体発光素子及びその製造方法
WO2007069651A1 (ja) * 2005-12-14 2007-06-21 Showa Denko K.K. 窒化ガリウム系化合物半導体発光素子及びその製造方法
JP5047516B2 (ja) * 2006-03-23 2012-10-10 昭和電工株式会社 窒化ガリウム系化合物半導体発光素子の製造方法、窒化ガリウム系化合物半導体発光素子及びそれを用いたランプ
JP5068475B2 (ja) * 2006-04-24 2012-11-07 昭和電工株式会社 窒化ガリウム系化合物半導体発光素子の製造方法及び窒化ガリウム系化合物半導体発光素子、並びにランプ
JP5237274B2 (ja) * 2007-06-28 2013-07-17 京セラ株式会社 発光素子及び照明装置
JP2009283551A (ja) * 2008-05-20 2009-12-03 Showa Denko Kk 半導体発光素子及びその製造方法、ランプ
JP4886766B2 (ja) 2008-12-25 2012-02-29 株式会社東芝 半導体発光素子
KR101943293B1 (ko) 2009-10-16 2019-01-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 표시 장치 및 전자 장치
JP7049186B2 (ja) * 2018-05-29 2022-04-06 日機装株式会社 半導体発光素子および半導体発光素子の製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3917223B2 (ja) * 1996-12-06 2007-05-23 ローム株式会社 半導体発光素子の製法
JPH10341039A (ja) * 1997-04-10 1998-12-22 Toshiba Corp 半導体発光素子およびその製造方法

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Publication number Publication date
JP2005244128A (ja) 2005-09-08

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