JP4534444B2 - 窒化物半導体レーザ及びその製造方法 - Google Patents

窒化物半導体レーザ及びその製造方法 Download PDF

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Publication number
JP4534444B2
JP4534444B2 JP2003272832A JP2003272832A JP4534444B2 JP 4534444 B2 JP4534444 B2 JP 4534444B2 JP 2003272832 A JP2003272832 A JP 2003272832A JP 2003272832 A JP2003272832 A JP 2003272832A JP 4534444 B2 JP4534444 B2 JP 4534444B2
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Japan
Prior art keywords
layer
current confinement
confinement layer
nitride semiconductor
semiconductor laser
Prior art date
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Expired - Fee Related
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JP2003272832A
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English (en)
Japanese (ja)
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JP2005033099A (ja
JP2005033099A5 (enrdf_load_stackoverflow
Inventor
拓明 松村
友弥 柳本
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Nichia Corp
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Nichia Corp
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Priority to JP2003272832A priority Critical patent/JP4534444B2/ja
Application filed by Nichia Corp filed Critical Nichia Corp
Priority to TW093118616A priority patent/TWI373894B/zh
Priority to DE602004011146T priority patent/DE602004011146T2/de
Priority to CNB2004100628252A priority patent/CN100379105C/zh
Priority to EP04015028A priority patent/EP1492209B1/en
Priority to US10/876,695 priority patent/US7227879B2/en
Priority to KR1020040048881A priority patent/KR101061616B1/ko
Publication of JP2005033099A publication Critical patent/JP2005033099A/ja
Publication of JP2005033099A5 publication Critical patent/JP2005033099A5/ja
Priority to US11/790,442 priority patent/US7817692B2/en
Application granted granted Critical
Publication of JP4534444B2 publication Critical patent/JP4534444B2/ja
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JP2003272832A 2003-06-27 2003-07-10 窒化物半導体レーザ及びその製造方法 Expired - Fee Related JP4534444B2 (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP2003272832A JP4534444B2 (ja) 2003-07-10 2003-07-10 窒化物半導体レーザ及びその製造方法
DE602004011146T DE602004011146T2 (de) 2003-06-27 2004-06-25 Nitrid-Halbleiterlaser mit Stromsperrschichten und Herstellungsverfahren hierfür
CNB2004100628252A CN100379105C (zh) 2003-06-27 2004-06-25 具有电流狭窄层的氮化物半导体激光器元件及其制造方法
EP04015028A EP1492209B1 (en) 2003-06-27 2004-06-25 Nitride semiconductor laser device having current blocking layer and method of manufacturing the same
TW093118616A TWI373894B (en) 2003-06-27 2004-06-25 Nitride semiconductor laser device having current blocking layer and method of manufacturing the same
US10/876,695 US7227879B2 (en) 2003-06-27 2004-06-28 Nitride semiconductor laser device having current blocking layer and method of manufacturing the same
KR1020040048881A KR101061616B1 (ko) 2003-06-27 2004-06-28 질화물 반도체 레이저 소자 및 그 제조 방법
US11/790,442 US7817692B2 (en) 2003-06-27 2007-04-25 Nitride semiconductor laser device having current blocking layer and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003272832A JP4534444B2 (ja) 2003-07-10 2003-07-10 窒化物半導体レーザ及びその製造方法

Publications (3)

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JP2005033099A JP2005033099A (ja) 2005-02-03
JP2005033099A5 JP2005033099A5 (enrdf_load_stackoverflow) 2006-08-24
JP4534444B2 true JP4534444B2 (ja) 2010-09-01

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JP2003272832A Expired - Fee Related JP4534444B2 (ja) 2003-06-27 2003-07-10 窒化物半導体レーザ及びその製造方法

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JP (1) JP4534444B2 (enrdf_load_stackoverflow)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007105281A1 (ja) 2006-03-10 2007-09-20 Fujitsu Limited 化合物半導体装置の製造方法及びエッチング液
JP4821385B2 (ja) * 2006-03-14 2011-11-24 日本電気株式会社 Ｉｉｉ族窒化物半導体光素子
JP4789713B2 (ja) * 2006-06-29 2011-10-12 株式会社豊田中央研究所 ウェットエッチング方法、ダメージ層除去方法、半導体装置の製造方法、および半導体基板の製造方法
JP2008108844A (ja) * 2006-10-24 2008-05-08 Toyota Central R&D Labs Inc トレンチ構造またはメサ構造を有するｉｉｉ族窒化物半導体装置およびその製造方法
JP4283840B2 (ja) 2006-10-24 2009-06-24 株式会社豊田中央研究所 Ｉｉｉ族窒化物半導体の製造方法
JP2008187034A (ja) * 2007-01-30 2008-08-14 Sharp Corp Ｉｉｉ−ｖ族窒化物半導体レーザ素子
JP5299301B2 (ja) * 2010-02-01 2013-09-25 住友電気工業株式会社 Ｉｉｉ族窒化物半導体レーザ素子
JP5734098B2 (ja) * 2011-05-31 2015-06-10 ルネサスエレクトロニクス株式会社 半導体レーザの製造方法
EP2597687B1 (en) * 2011-11-23 2016-02-03 Imec Method for producing a GaN LED device
DE102018129051A1 (de) 2018-11-19 2020-05-20 Osram Opto Semiconductors Gmbh Kantenemittierender Halbleiterlaser
JP2025009365A (ja) * 2023-07-07 2025-01-20 ソニーセミコンダクタソリューションズ株式会社 面発光素子及び面発光素子の製造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3988961B2 (ja) * 1996-07-25 2007-10-10 シャープ株式会社 窒化ガリウム系化合物半導体発光素子及びその製造方法
JPH1093192A (ja) * 1996-07-26 1998-04-10 Toshiba Corp 窒化ガリウム系化合物半導体レーザ及びその製造方法
JP4079393B2 (ja) * 1998-03-10 2008-04-23 シャープ株式会社 窒化物系化合物半導体レーザ素子及びその製造方法
JP2000068593A (ja) * 1998-08-25 2000-03-03 Mitsubishi Electric Corp 半導体レーザ装置及びその製造方法
JP2001094212A (ja) * 1999-09-24 2001-04-06 Sanyo Electric Co Ltd 半導体素子およびその製造方法
US6597717B1 (en) * 1999-11-19 2003-07-22 Xerox Corporation Structure and method for index-guided, inner stripe laser diode structure
JP2001223440A (ja) * 2000-02-08 2001-08-17 Fuji Photo Film Co Ltd 半導体レーザ装置
JP2002314203A (ja) * 2001-04-12 2002-10-25 Pioneer Electronic Corp ３族窒化物半導体レーザ及びその製造方法
JP3785970B2 (ja) * 2001-09-03 2006-06-14 日本電気株式会社 Ｉｉｉ族窒化物半導体素子の製造方法

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