JP4532991B2 - 投影光学系、露光装置及びデバイス製造方法 - Google Patents

投影光学系、露光装置及びデバイス製造方法 Download PDF

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Publication number
JP4532991B2
JP4532991B2 JP2004156362A JP2004156362A JP4532991B2 JP 4532991 B2 JP4532991 B2 JP 4532991B2 JP 2004156362 A JP2004156362 A JP 2004156362A JP 2004156362 A JP2004156362 A JP 2004156362A JP 4532991 B2 JP4532991 B2 JP 4532991B2
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Japan
Prior art keywords
optical system
film
projection optical
multilayer film
mirror
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Japanese (ja)
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JP2005340459A (ja
JP2005340459A5 (enExample
Inventor
義之 関根
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Canon Inc
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Canon Inc
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Priority to JP2004156362A priority Critical patent/JP4532991B2/ja
Priority to US11/139,337 priority patent/US7511888B2/en
Publication of JP2005340459A publication Critical patent/JP2005340459A/ja
Publication of JP2005340459A5 publication Critical patent/JP2005340459A5/ja
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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/08—Mirrors
    • G02B5/0891—Ultraviolet [UV] mirrors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
    • G21K1/062—Devices having a multilayer structure

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Optical Elements Other Than Lenses (AREA)
  • Lenses (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2004156362A 2004-05-26 2004-05-26 投影光学系、露光装置及びデバイス製造方法 Expired - Fee Related JP4532991B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2004156362A JP4532991B2 (ja) 2004-05-26 2004-05-26 投影光学系、露光装置及びデバイス製造方法
US11/139,337 US7511888B2 (en) 2004-05-26 2005-05-26 Projection optical system, exposure apparatus, device manufacturing method, and device manufactured by using the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004156362A JP4532991B2 (ja) 2004-05-26 2004-05-26 投影光学系、露光装置及びデバイス製造方法

Publications (3)

Publication Number Publication Date
JP2005340459A JP2005340459A (ja) 2005-12-08
JP2005340459A5 JP2005340459A5 (enExample) 2007-07-12
JP4532991B2 true JP4532991B2 (ja) 2010-08-25

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JP2004156362A Expired - Fee Related JP4532991B2 (ja) 2004-05-26 2004-05-26 投影光学系、露光装置及びデバイス製造方法

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US (1) US7511888B2 (enExample)
JP (1) JP4532991B2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9261773B2 (en) 2013-02-20 2016-02-16 Asahi Glass Company, Limited Reflective mask blank for EUV lithography, and reflective layer-coated substrate for EUV lithography

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007029852A1 (en) * 2005-09-07 2007-03-15 Fujifilm Corporation Pattern exposure method and pattern exposure apparatus
JP4905914B2 (ja) * 2005-10-14 2012-03-28 Ｈｏｙａ株式会社 多層反射膜付き基板、その製造方法、反射型マスクブランクおよび反射型マスク
JP2007258625A (ja) * 2006-03-27 2007-10-04 Nikon Corp 露光装置及びレチクル
JP2009141177A (ja) * 2007-12-07 2009-06-25 Canon Inc Ｅｕｖ用ミラー及びそれを有するｅｕｖ露光装置
DE102008002403A1 (de) * 2008-06-12 2009-12-17 Carl Zeiss Smt Ag Verfahren zum Herstellen einer Mehrlagen-Beschichtung, optisches Element und optische Anordnung
JP2010199503A (ja) * 2009-02-27 2010-09-09 Nikon Corp 光学素子、露光装置及びデバイス製造方法
DE102009017096A1 (de) 2009-04-15 2010-10-21 Carl Zeiss Smt Ag Spiegel für den EUV-Wellenlängenbereich, Projektionsobjektiv für die Mikrolithographie mit einem solchen Spiegel und Projektionsbelichtungsanlage für die Mikrolithographie mit einem solchen Projektionsobjektiv
DE102011005144A1 (de) * 2010-03-17 2011-09-22 Carl Zeiss Smt Gmbh Reflektives optisches Element, Projektionssystem und Projektionsbelichtungsanlage
DE102010038697B4 (de) * 2010-07-30 2012-07-19 Carl Zeiss Smt Gmbh Verfahren und Vorrichtung zur Qualifizierung einer Optik einer Projektionsbelichtungsanlage für die Mikrolithographie
WO2012041697A1 (en) * 2010-09-27 2012-04-05 Carl Zeiss Smt Gmbh Mirror, projection objective comprising such a mirror, and projection exposure apparatus for microlithography comprising such a projection objective
JP6069919B2 (ja) * 2012-07-11 2017-02-01 旭硝子株式会社 Ｅｕｖリソグラフィ用反射型マスクブランクおよびその製造方法、ならびに該マスクブランク用の反射層付基板およびその製造方法
WO2014181858A1 (ja) * 2013-05-09 2014-11-13 株式会社ニコン 光学素子、投影光学系、露光装置及びデバイス製造方法
CN110622048B (zh) * 2017-03-02 2023-03-28 3M创新有限公司 具有低光学厚度敏感性的动态反射彩色膜

Family Cites Families (14)

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JPH04169898A (ja) * 1990-11-02 1992-06-17 Seiko Instr Inc Ｘ線多層膜鏡構造体
US6188513B1 (en) * 1999-03-15 2001-02-13 Russell Hudyma High numerical aperture ring field projection system for extreme ultraviolet lithography
TWI267704B (en) * 1999-07-02 2006-12-01 Asml Netherlands Bv Capping layer for EUV optical elements
JP2001057328A (ja) * 1999-08-18 2001-02-27 Nikon Corp 反射マスク、露光装置および集積回路の製造方法
FR2802311B1 (fr) * 1999-12-08 2002-01-18 Commissariat Energie Atomique Dispositif de lithographie utilisant une source de rayonnement dans le domaine extreme ultraviolet et des miroirs multicouches a large bande spectrale dans ce domaine
JP2002134385A (ja) * 2000-10-20 2002-05-10 Nikon Corp 多層膜反射鏡および露光装置
JP2003014893A (ja) * 2001-04-27 2003-01-15 Nikon Corp 多層膜反射鏡及び露光装置
JP4178862B2 (ja) 2001-08-01 2008-11-12 カール・ツァイス・エスエムティー・アーゲー Ｅｕｖフォトリソグラフィ用の反射投影レンズ
JP2003315532A (ja) * 2002-04-22 2003-11-06 Sony Corp 極短紫外光の反射体およびその製造方法、位相シフトマスク、並びに露光装置
JP4144301B2 (ja) * 2002-09-03 2008-09-03 株式会社ニコン 多層膜反射鏡、反射型マスク、露光装置及び反射型マスクの製造方法
JP2005056943A (ja) * 2003-08-08 2005-03-03 Canon Inc Ｘ線多層ミラーおよびｘ線露光装置
AU2003293308A1 (en) * 2003-09-17 2005-04-27 Carl Zeiss Smt Ag Masks, lithography device and semiconductor component
ATE538491T1 (de) * 2003-10-15 2012-01-15 Nikon Corp Mehrschichtiger filmreflexionsspiegel, herstellungsverfahren für einen mehrschichtigen filmreflexionsspiegel und belichtungssystem
US7336416B2 (en) * 2005-04-27 2008-02-26 Asml Netherlands B.V. Spectral purity filter for multi-layer mirror, lithographic apparatus including such multi-layer mirror, method for enlarging the ratio of desired radiation and undesired radiation, and device manufacturing method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9261773B2 (en) 2013-02-20 2016-02-16 Asahi Glass Company, Limited Reflective mask blank for EUV lithography, and reflective layer-coated substrate for EUV lithography

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Publication number Publication date
JP2005340459A (ja) 2005-12-08
US20050270648A1 (en) 2005-12-08
US7511888B2 (en) 2009-03-31

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