JP4518731B2 - 多結晶シリコン基板表面の凹凸形成方法 - Google Patents

多結晶シリコン基板表面の凹凸形成方法 Download PDF

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Publication number
JP4518731B2
JP4518731B2 JP2002140026A JP2002140026A JP4518731B2 JP 4518731 B2 JP4518731 B2 JP 4518731B2 JP 2002140026 A JP2002140026 A JP 2002140026A JP 2002140026 A JP2002140026 A JP 2002140026A JP 4518731 B2 JP4518731 B2 JP 4518731B2
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silicon substrate
substrate
polycrystalline silicon
hydrogen radicals
semiconductor substrate
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Expired - Fee Related
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JP2002140026A
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Japanese (ja)
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JP2003332605A5 (https=
JP2003332605A (ja
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祐司 栗本
一郎 山嵜
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Sharp Corp
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Sharp Corp
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells

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JP2002140026A 2002-05-15 2002-05-15 多結晶シリコン基板表面の凹凸形成方法 Expired - Fee Related JP4518731B2 (ja)

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JP2002140026A JP4518731B2 (ja) 2002-05-15 2002-05-15 多結晶シリコン基板表面の凹凸形成方法

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JP2002140026A JP4518731B2 (ja) 2002-05-15 2002-05-15 多結晶シリコン基板表面の凹凸形成方法

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JP2003332605A JP2003332605A (ja) 2003-11-21
JP2003332605A5 JP2003332605A5 (https=) 2005-09-08
JP4518731B2 true JP4518731B2 (ja) 2010-08-04

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Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005340643A (ja) * 2004-05-28 2005-12-08 Sharp Corp 太陽電池用半導体基板の製造方法
JP4715474B2 (ja) * 2005-11-30 2011-07-06 株式会社島津製作所 太陽電池の反射防止膜成膜方法、および太陽電池反射防止膜成膜装置
KR100964153B1 (ko) 2006-11-22 2010-06-17 엘지전자 주식회사 태양전지의 제조방법 및 그에 의해 제조되는 태양전지
KR101453086B1 (ko) * 2007-11-27 2014-10-27 엘지전자 주식회사 태양전지의 제조방법
JP5747304B2 (ja) * 2010-02-26 2015-07-15 株式会社アルバック 表面処理方法及び太陽電池セルの製造方法
RU2449226C2 (ru) * 2010-06-18 2012-04-27 Открытое акционерное общество "Информационные спутниковые системы" имени академика М.Ф. Решетнёва" Подложка панели солнечной батареи и способ ее изготовления

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6196772A (ja) * 1984-10-17 1986-05-15 Toshiba Corp 太陽電池用半導体基板の表面処理方法
JP2585403B2 (ja) * 1988-11-24 1997-02-26 シャープ株式会社 太陽電池の製造方法
JPH03283471A (ja) * 1990-03-30 1991-12-13 Tonen Corp 太陽電池の製造方法
JP3048732B2 (ja) * 1991-11-25 2000-06-05 三洋電機株式会社 光起電力装置
JP3358164B2 (ja) * 1992-03-19 2002-12-16 三洋電機株式会社 光起電力装置の製造方法
JPH07142749A (ja) * 1993-11-15 1995-06-02 Matsushita Electric Ind Co Ltd 太陽電池とその製造方法
JP2918815B2 (ja) * 1995-07-13 1999-07-12 キヤノン株式会社 光起電力素子及びその製造方法
JPH11274535A (ja) * 1998-03-26 1999-10-08 Kanegafuchi Chem Ind Co Ltd シリコン系薄膜光電変換装置の製造装置
JP2000150379A (ja) * 1998-11-09 2000-05-30 Toyota Central Res & Dev Lab Inc 結晶質半導体層を有する積層体の製造方法
JP4247947B2 (ja) * 2000-06-05 2009-04-02 株式会社カネカ 半導体薄膜光電変換装置の製造方法
JP4032610B2 (ja) * 2000-06-16 2008-01-16 富士電機アドバンストテクノロジー株式会社 非単結晶薄膜太陽電池の製造方法
JP2002075877A (ja) * 2000-08-30 2002-03-15 Kyocera Corp 多結晶半導体薄膜の形成方法およびその形成装置およびその多結晶半導体薄膜を用いた太陽電池

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