JP4515422B2 - Ge−Sb−Te薄膜蒸着方法 - Google Patents
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- JP4515422B2 JP4515422B2 JP2006226361A JP2006226361A JP4515422B2 JP 4515422 B2 JP4515422 B2 JP 4515422B2 JP 2006226361 A JP2006226361 A JP 2006226361A JP 2006226361 A JP2006226361 A JP 2006226361A JP 4515422 B2 JP4515422 B2 JP 4515422B2
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
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Description
図1は、本発明によるGe−Sb−Te薄膜蒸着方法の第1ないし第6実施例を行える薄膜蒸着装置の一構成を図示した図面であり、図2は、第1ないし第6実施例を行える薄膜蒸着装置の他の構成を図示した図面である。
まず図3は、本発明によるGe−Sb−Te薄膜蒸着方法の第1実施例を説明するためのフローチャートである。
図4は、本発明によるGe−Sb−Te薄膜蒸着方法の第2実施例を説明するためのフローチャートである。
図5は、本発明によるGe−Sb−Te薄膜蒸着方法の第3実施例を説明するためのフローチャートである。
図6は、本発明によるGe−Sb−Te薄膜蒸着方法の第4実施例を説明するためのフローチャートであって、第1実施例の変形例である。
図7は、本発明によるGe−Sb−Te薄膜蒸着方法の第5実施例を説明するためのフローチャートであって、第2実施例の変形例である。
図8は、本発明によるGe−Sb−Te薄膜蒸着方法の第6実施例を説明するためのフローチャートであって、第3実施例の変形例である。
図9及び図10は、本発明によるGe−Sb−Te薄膜蒸着方法の第7ないし第17実施例を行える薄膜蒸着装置の多様な構成を図示した図面である。
図11は、本発明によるGe−Sb−Te薄膜蒸着方法の第7実施例を説明するためのフローチャートである。
図12は、本発明によるGe−Sb−Te薄膜蒸着方法の第8実施例を説明するためのフローチャートである。
図13は、本発明によるGe−Sb−Te薄膜蒸着方法の第9実施例を説明するためのフローチャートである。
図14は、本発明によるGe−Sb−Te薄膜蒸着方法の第10実施例を説明するためのフローチャートである。
図15は、本発明によるGe−Sb−Te薄膜蒸着方法の第11実施例を説明するためのフローチャートであって、第7実施例の変形例である。
図16は、本発明によるGe−Sb−Te薄膜蒸着方法の第12実施例を説明するためのフローチャートであって、第8実施例の変形例である。
図17は、本発明によるGe−Sb−Te薄膜蒸着方法の第13実施例を説明するためのフローチャートであって、第9実施例の変形例である。
図18は、本発明によるGe−Sb−Te薄膜蒸着方法の第14実施例を説明するためのフローチャートであって、第10実施例の変形例である。
11 シャワーヘッド
12 ウェーハブロック
12a ヒータ
13 プラズマ発生装置
15 リモートプラズマ発生装置
Claims (12)
- 基板が内蔵されたチャンバであってGe、Sb及びTeのうち選択されたいずれか一つを含む第1前駆体と、Ge、Sb及びTeのうち選択された他の一つを含む第2前駆体と、Ge、Sb及びTeのうち選択された残りの一つを含む第3前駆体と、をフィーディング及びパージすることで前記基板上にGe−Sb−Te膜を形成するGe−Sb−Te膜形成ステップと、
少なくとも前記第1ないし第3前駆体のうちいずれか一つがフィーディングされる間に前記チャンバにプラズマを印加した状態で反応ガスをフィーディングする反応ガスフィーディングステップと、を含み、
前記反応ガスは、H2とHeとの組み合わせ、またはH2とHeとArとの組み合わせであり、
前記H 2 とHeの組成、または前記H 2 とHeとArの組成を調整することで、前記Ge−Sb−Te膜内のC濃度を所望のC濃度に合わせることを特徴とするGe−Sb−Te薄膜蒸着方法。 - 前記反応ガスは、前記第1ないし第3前駆体のうちいずれか一つがパージされる間にもフィーディングすることを特徴とする請求項1に記載のGe−Sb−Te薄膜蒸着方法。
- 前記Ge−Sb−Te膜形成ステップは、
前記第1前駆体をフィーディングするフィーディングステップと、前記第1前駆体をパージするパージステップと、前記第2前駆体をフィーディングするフィーディングステップと、前記第2前駆体をパージするパージステップと、前記第3前駆体をフィーディングするフィーディングステップと、前記第3前駆体をパージするパージステップと、前記第2前駆体を再びフィーディングするフィーディングステップと、前記第2前駆体をパージするパージステップとを順次に進めることによって行うが、前記第1前駆体はGeを含有し、第2前駆体はTeを含有し、第3前駆体はSbを含有することを特徴とする請求項1または2に記載のGe−Sb−Te薄膜蒸着方法。 - 前記Ge−Sb−Te膜をなす各元素の組成は、前記第1ないし第3前駆体の温度や蒸気圧を調節するか、温度及び蒸気圧を固定させた状態で前記第1ないし第3前駆体フィーディング時間を調節するか、または移送ガスの量を調節することによって、調節可能であることを特徴とする請求項3に記載のGe−Sb−Te薄膜蒸着方法。
- 前記Ge−Sb−Te膜形成ステップは、
前記第1前駆体をフィーディングするフィーディングステップと、前記第1前駆体をパージするパージステップと、前記第2前駆体をフィーディングするフィーディングステップと、前記第2前駆体をパージするパージステップと、前記第3前駆体をフィーディングするフィーディングステップと、前記第3前駆体をパージするパージステップとを順次に進めることによって行うことを特徴とする請求項1または2に記載のGe−Sb−Te薄膜蒸着方法。 - 前記Ge−Sb−Te膜をなす各元素の組成は、前記第1ないし第3前駆体の温度や蒸気圧を調節するか、温度及び蒸気圧を固定させた状態で前記第1ないし第3前駆体フィーディング時間を調節するか、または移送ガスの量を調節することによって、調節可能であることを特徴とする請求項5に記載のGe−Sb−Te薄膜蒸着方法。
- 前記Ge−Sb−Te膜形成ステップは、
前記第1前駆体と第2前駆体とを同時にフィーディングする第1及び第2前駆体フィーディングステップと、前記第1前駆体と第2前駆体とを同時にパージする第1及び第2前駆体パージステップと、前記第2前駆体と第3前駆体とを同時にフィーディングする第2及び第3前駆体フィーディングステップと、前記第2前駆体と第3前駆体とを同時に行う第2及び第3前駆体パージステップとを順次に進めることによって行うことを特徴とする請求項1または2に記載のGe−Sb−Te薄膜蒸着方法。 - 前記Ge−Sb−Te膜をなす各元素の組成は、前記第1ないし第3前駆体の温度や蒸気圧を調節するか、温度及び蒸気圧を固定させた状態で前記第1及び第2前駆体フィーディング時間及び前記第2及び第3前駆体フィーディング時間を調節するか、または移送ガスの量を調節することによって、調節可能であることを特徴とする請求項7に記載のGe−Sb−Te薄膜蒸着方法。
- 前記Ge−Sb−Te膜形成ステップは、
前記第1ないし第3前駆体を同時にフィーディングする第1ないし第3前駆体フィーディングステップと、前記第1ないし第3前駆体を同時にパージする第1ないし第3前駆体パージステップと、を順次に進めることによって行うことを特徴とする請求項1または2に記載のGe−Sb−Te薄膜蒸着方法。 - 前記Ge−Sb−Te膜をなす各元素の組成は、前記第1ないし第3前駆体の温度や蒸気圧を調節するか、温度及び蒸気圧を固定させた状態で前記第1ないし第3前駆体フィーディング時間を調節するか、または移送ガスの量を調節することによって、調節可能であることを特徴とする請求項9に記載のGe−Sb−Te薄膜蒸着方法。
- 前記基板の温度は、20℃〜700℃範囲内で進めることを特徴とする請求項1または2に記載のGe−Sb−Te薄膜蒸着方法。
- 前記チャンバ内部の圧力は、0.1torr〜100torr範囲内で進めることを特徴とする請求項1または2に記載のGe−Sb−Te薄膜蒸着方法。
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KR1020050078009A KR100704124B1 (ko) | 2005-08-24 | 2005-08-24 | Ge-Sb-Te 박막증착방법 |
KR1020050078010A KR100704125B1 (ko) | 2005-08-24 | 2005-08-24 | Ge-Sb-Te 박막증착방법 |
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JP2007056369A JP2007056369A (ja) | 2007-03-08 |
JP4515422B2 true JP4515422B2 (ja) | 2010-07-28 |
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DE102006038885B4 (de) | 2013-10-10 |
JP2007056369A (ja) | 2007-03-08 |
TW200709279A (en) | 2007-03-01 |
US20070048977A1 (en) | 2007-03-01 |
DE102006038885A1 (de) | 2007-03-01 |
TWI309855B (en) | 2009-05-11 |
US8029859B2 (en) | 2011-10-04 |
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