JP4508882B2 - エレクトロルミネセンス素子 - Google Patents
エレクトロルミネセンス素子 Download PDFInfo
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- JP4508882B2 JP4508882B2 JP2005009738A JP2005009738A JP4508882B2 JP 4508882 B2 JP4508882 B2 JP 4508882B2 JP 2005009738 A JP2005009738 A JP 2005009738A JP 2005009738 A JP2005009738 A JP 2005009738A JP 4508882 B2 JP4508882 B2 JP 4508882B2
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- 238000005401 electroluminescence Methods 0.000 title claims description 4
- 239000000843 powder Substances 0.000 claims description 56
- 239000002245 particle Substances 0.000 claims description 43
- 239000000758 substrate Substances 0.000 claims description 25
- 239000010410 layer Substances 0.000 description 302
- 239000010408 film Substances 0.000 description 103
- 238000000034 method Methods 0.000 description 30
- 239000010409 thin film Substances 0.000 description 24
- 239000000463 material Substances 0.000 description 23
- 238000010304 firing Methods 0.000 description 16
- 239000011521 glass Substances 0.000 description 13
- 238000007650 screen-printing Methods 0.000 description 11
- 238000007740 vapor deposition Methods 0.000 description 9
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- 229920005989 resin Polymers 0.000 description 8
- 239000002904 solvent Substances 0.000 description 8
- 238000004544 sputter deposition Methods 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
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- LTPBRCUWZOMYOC-UHFFFAOYSA-N Beryllium oxide Chemical compound O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 5
- 239000000956 alloy Substances 0.000 description 5
- 230000007423 decrease Effects 0.000 description 5
- 229910052737 gold Inorganic materials 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 238000009461 vacuum packaging Methods 0.000 description 4
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 3
- 229910002113 barium titanate Inorganic materials 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000001186 cumulative effect Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 230000002706 hydrostatic effect Effects 0.000 description 3
- 238000011835 investigation Methods 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229910000510 noble metal Inorganic materials 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 239000003870 refractory metal Substances 0.000 description 3
- 230000003746 surface roughness Effects 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910006404 SnO 2 Inorganic materials 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000009499 grossing Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000000462 isostatic pressing Methods 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- -1 or Ir Substances 0.000 description 2
- 239000005022 packaging material Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- KMUONIBRACKNSN-UHFFFAOYSA-N potassium dichromate Chemical compound [K+].[K+].[O-][Cr](=O)(=O)O[Cr]([O-])(=O)=O KMUONIBRACKNSN-UHFFFAOYSA-N 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 229910000906 Bronze Inorganic materials 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- 241001175904 Labeo bata Species 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 229910002367 SrTiO Inorganic materials 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 239000010974 bronze Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000011362 coarse particle Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 description 1
- 210000003298 dental enamel Anatomy 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 229910052839 forsterite Inorganic materials 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004898 kneading Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- HCWCAKKEBCNQJP-UHFFFAOYSA-N magnesium orthosilicate Chemical compound [Mg+2].[Mg+2].[O-][Si]([O-])([O-])[O-] HCWCAKKEBCNQJP-UHFFFAOYSA-N 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052863 mullite Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 238000010606 normalization Methods 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid Substances OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 1
- 229940116411 terpineol Drugs 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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- Electroluminescent Light Sources (AREA)
Description
G/GF>0.53 (1)
式(1)中、GFは式(4)および(5)を用いて求められる鏡面光沢度GS(θ)である
なお、焼成により形成された後の厚膜誘電体層4を構成する誘電体粉体のメジアン粒径を求める場合には、厚膜誘電体層4の断面を走査型顕微鏡で観察し、誘電体粉末の個々の粒径を求めれば、上記と同様にして得ることができる。
また、厚膜誘電体層4を有し、厚膜誘電体層4上に種々の層を積層して完成したEL素子1における厚膜誘電体層4の上面の光沢度、好ましくは60°鏡面光沢度を測定するには、第2電極層3B、発光層5、必要に応じて積層された厚膜誘電体層4とは別の誘電体層を取り除く必要があるが、例えば、第2電極層3BがITOからなるときは、希塩酸 を用いて溶解除去し、発光層5がZnS:Mnからなるときは、濃硫酸(16規定)に0.5Mの二クロム酸カリウムを加えた混酸を用いて除去し、厚膜誘電体層4とは別の誘電体層については、フッ酸と硝酸の混酸(フッ酸:硝酸:水=1:1:40)で化学的に除去
するか、もしくは物理的な研磨方法によって除去することが好ましい。
通常の鏡面光沢度に加え、JIS Z 8741におけるフレネルの式等を用いて求める鏡面光沢度GS(θ)との比、即ち、通常の鏡面光沢度をGとするとき、G/GS(θ)を求め、G/GS(θ)>0.53の関係を有する場合には、そのような厚膜誘電体層4上に発光層やその他の層を形成しても、支障のないEL素子を構成することが可能であることが判明した。
(ペースト配合)
・PMN粉末………………………………………………………………………60質量部
・添加剤(分散剤、可塑剤、およびバインダー樹脂)…………………………6質量部
・溶剤(ターピネオール)………………………………………………………34質量部
膜厚は膜厚計(アルバック(株)製、触針式表面形状測定器、品番:DEKTAK SPD−650)を用いて測定し、光沢度については、光沢度計((株)堀場製作所製、「グロスチェッカーIG−331」)を用い、60°鏡面光沢度を測定した。
こうして得られた結果を、前段落における測定結果と共に、「表1」に示す。
2……基板
3……電極層(3A;第1電極層、3B;第2電極層)
4……厚膜誘電体層
5……発光層
6……平坦化層
7……薄膜誘電体層
Claims (5)
- 基板上に、少なくとも第1電極層、厚膜誘電体層、発光層、および第2電極層の各層が順に積層されており、
前記厚膜誘電体層は誘電体粉体どうしが固着して構成されたものであって、
前記厚膜誘電体層が前記発光層側の層および前記第1電極層側の層の2層で構成されており、
前記発光層側の層を構成する前記誘電体粉体のメジアン粒径Bが0.3μm以下であり、
前記メジアン粒径Bと前記第1電極層側の層を構成する前記誘電体粉体のメジアン粒径AとがA>Bの関係を満たすことを特徴とするエレクトロルミネセンス素子。 - 前記メジアン粒径Bが、0.3μm以下、かつ0.05μm以上であることを特徴とする請求項1に記載のエレクトロルミネセンス素子。
- 前記メジアン粒径Aが、0.4μm〜1.0μmであることを特徴とする請求項1又は請求項2に記載のエレクトロルミネセンス素子。
- 前記第1電極層側の層の厚みが、前記発光層側の層の厚みの1.0〜3.0倍であることを特徴とする請求項1ないし請求項3のいずれか1項に記載のエレクトロルミネセンス素子。
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JP2005009738A JP4508882B2 (ja) | 2005-01-18 | 2005-01-18 | エレクトロルミネセンス素子 |
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JP2005009738A JP4508882B2 (ja) | 2005-01-18 | 2005-01-18 | エレクトロルミネセンス素子 |
Publications (3)
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JP2006202499A JP2006202499A (ja) | 2006-08-03 |
JP2006202499A5 JP2006202499A5 (ja) | 2007-12-27 |
JP4508882B2 true JP4508882B2 (ja) | 2010-07-21 |
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JP2005009738A Expired - Fee Related JP4508882B2 (ja) | 2005-01-18 | 2005-01-18 | エレクトロルミネセンス素子 |
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Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
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JP4831997B2 (ja) * | 2005-05-23 | 2011-12-07 | 大日本印刷株式会社 | El素子パネル形成用複合基板とその作製方法、およびel素子パネル |
JP7276659B2 (ja) * | 2019-08-27 | 2023-05-18 | Tdk株式会社 | 誘電体組成物および電子部品 |
Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63164196A (ja) * | 1986-12-25 | 1988-07-07 | 日本電気株式会社 | El素子 |
JP2000294381A (ja) * | 1999-04-08 | 2000-10-20 | Tdk Corp | El素子 |
JP2002246182A (ja) * | 2000-12-12 | 2002-08-30 | Tdk Corp | El素子 |
JP2002246180A (ja) * | 2001-02-14 | 2002-08-30 | Tdk Corp | El素子 |
WO2003056879A1 (en) * | 2001-12-21 | 2003-07-10 | Ifire Technology Inc. | Low firing temperature thick film dielectric layer for electroluminescent display |
WO2004008424A1 (ja) * | 2002-07-16 | 2004-01-22 | Tdk Corporation | フラットパネルディスプレイ用基板および薄膜el素子 |
JP2004273444A (ja) * | 2003-02-20 | 2004-09-30 | Mitsubishi Chemicals Corp | リチウム二次電池用負極活物質、リチウム二次電池負極及びリチウム二次電池 |
JP2004323284A (ja) * | 2003-04-24 | 2004-11-18 | Shin Etsu Chem Co Ltd | 珪素複合体及びその製造方法並びに非水電解質二次電池用負極材 |
JP2004356024A (ja) * | 2003-05-30 | 2004-12-16 | Tdk Corp | 複合基板とel素子の製造方法、および複合基板とel素子の製造装置 |
JP2006028004A (ja) * | 2004-06-14 | 2006-02-02 | Asahi Glass Co Ltd | 誘電体層形成用組成物、mimキャパシタ及びその製造方法 |
JP2006179435A (ja) * | 2004-12-24 | 2006-07-06 | Aisin Keikinzoku Co Ltd | 発光性意匠体及びその製造法 |
-
2005
- 2005-01-18 JP JP2005009738A patent/JP4508882B2/ja not_active Expired - Fee Related
Patent Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63164196A (ja) * | 1986-12-25 | 1988-07-07 | 日本電気株式会社 | El素子 |
JP2000294381A (ja) * | 1999-04-08 | 2000-10-20 | Tdk Corp | El素子 |
JP2002246182A (ja) * | 2000-12-12 | 2002-08-30 | Tdk Corp | El素子 |
JP2002246180A (ja) * | 2001-02-14 | 2002-08-30 | Tdk Corp | El素子 |
WO2003056879A1 (en) * | 2001-12-21 | 2003-07-10 | Ifire Technology Inc. | Low firing temperature thick film dielectric layer for electroluminescent display |
WO2004008424A1 (ja) * | 2002-07-16 | 2004-01-22 | Tdk Corporation | フラットパネルディスプレイ用基板および薄膜el素子 |
JP2004273444A (ja) * | 2003-02-20 | 2004-09-30 | Mitsubishi Chemicals Corp | リチウム二次電池用負極活物質、リチウム二次電池負極及びリチウム二次電池 |
JP2004323284A (ja) * | 2003-04-24 | 2004-11-18 | Shin Etsu Chem Co Ltd | 珪素複合体及びその製造方法並びに非水電解質二次電池用負極材 |
JP2004356024A (ja) * | 2003-05-30 | 2004-12-16 | Tdk Corp | 複合基板とel素子の製造方法、および複合基板とel素子の製造装置 |
JP2006028004A (ja) * | 2004-06-14 | 2006-02-02 | Asahi Glass Co Ltd | 誘電体層形成用組成物、mimキャパシタ及びその製造方法 |
JP2006179435A (ja) * | 2004-12-24 | 2006-07-06 | Aisin Keikinzoku Co Ltd | 発光性意匠体及びその製造法 |
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