JP4502115B2 - 含窒素有機化合物、化学増幅型レジスト材料及びパターン形成方法 - Google Patents

含窒素有機化合物、化学増幅型レジスト材料及びパターン形成方法 Download PDF

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Publication number
JP4502115B2
JP4502115B2 JP2004128478A JP2004128478A JP4502115B2 JP 4502115 B2 JP4502115 B2 JP 4502115B2 JP 2004128478 A JP2004128478 A JP 2004128478A JP 2004128478 A JP2004128478 A JP 2004128478A JP 4502115 B2 JP4502115 B2 JP 4502115B2
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Japan
Prior art keywords
group
bis
nitrogen
sulfonate
resist material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2004128478A
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English (en)
Japanese (ja)
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JP2005306812A (ja
Inventor
武 渡辺
幸士 長谷川
勝也 竹村
和美 野田
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Shin Etsu Chemical Co Ltd
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Shin Etsu Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
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Priority to JP2004128478A priority Critical patent/JP4502115B2/ja
Priority to US11/110,927 priority patent/US7261995B2/en
Priority to TW094112901A priority patent/TW200538868A/zh
Priority to KR1020050033606A priority patent/KR100829700B1/ko
Publication of JP2005306812A publication Critical patent/JP2005306812A/ja
Application granted granted Critical
Publication of JP4502115B2 publication Critical patent/JP4502115B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • E—FIXED CONSTRUCTIONS
    • E06—DOORS, WINDOWS, SHUTTERS, OR ROLLER BLINDS IN GENERAL; LADDERS
    • E06B—FIXED OR MOVABLE CLOSURES FOR OPENINGS IN BUILDINGS, VEHICLES, FENCES OR LIKE ENCLOSURES IN GENERAL, e.g. DOORS, WINDOWS, BLINDS, GATES
    • E06B7/00—Special arrangements or measures in connection with doors or windows
    • E06B7/26—Rain or draught deflectors, e.g. under sliding wings also protection against light for doors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D493/00—Heterocyclic compounds containing oxygen atoms as the only ring hetero atoms in the condensed system
    • C07D493/02—Heterocyclic compounds containing oxygen atoms as the only ring hetero atoms in the condensed system in which the condensed system contains two hetero rings
    • C07D493/08—Bridged systems
    • E—FIXED CONSTRUCTIONS
    • E06—DOORS, WINDOWS, SHUTTERS, OR ROLLER BLINDS IN GENERAL; LADDERS
    • E06B—FIXED OR MOVABLE CLOSURES FOR OPENINGS IN BUILDINGS, VEHICLES, FENCES OR LIKE ENCLOSURES IN GENERAL, e.g. DOORS, WINDOWS, BLINDS, GATES
    • E06B7/00—Special arrangements or measures in connection with doors or windows
    • E06B7/16—Sealing arrangements on wings or parts co-operating with the wings
    • E06B7/22—Sealing arrangements on wings or parts co-operating with the wings by means of elastic edgings, e.g. elastic rubber tubes; by means of resilient edgings, e.g. felt or plush strips, resilient metal strips
    • E06B7/23—Plastic, sponge rubber, or like strips or tubes
    • E06B7/2305—Plastic, sponge rubber, or like strips or tubes with an integrally formed part for fixing the edging
    • E06B7/2307—Plastic, sponge rubber, or like strips or tubes with an integrally formed part for fixing the edging with a single sealing-line or -plane between the wing and the part co-operating with the wing
    • E06B7/231—Plastic, sponge rubber, or like strips or tubes with an integrally formed part for fixing the edging with a single sealing-line or -plane between the wing and the part co-operating with the wing with a solid sealing part
    • E—FIXED CONSTRUCTIONS
    • E06—DOORS, WINDOWS, SHUTTERS, OR ROLLER BLINDS IN GENERAL; LADDERS
    • E06B—FIXED OR MOVABLE CLOSURES FOR OPENINGS IN BUILDINGS, VEHICLES, FENCES OR LIKE ENCLOSURES IN GENERAL, e.g. DOORS, WINDOWS, BLINDS, GATES
    • E06B7/00—Special arrangements or measures in connection with doors or windows
    • E06B7/16—Sealing arrangements on wings or parts co-operating with the wings
    • E06B7/22—Sealing arrangements on wings or parts co-operating with the wings by means of elastic edgings, e.g. elastic rubber tubes; by means of resilient edgings, e.g. felt or plush strips, resilient metal strips
    • E06B7/23—Plastic, sponge rubber, or like strips or tubes
    • E06B7/2314—Plastic, sponge rubber, or like strips or tubes characterised by the material
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G03F7/0758—Macromolecular compounds containing Si-O, Si-C or Si-N bonds with silicon- containing groups in the side chains

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Civil Engineering (AREA)
  • Structural Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Heterocyclic Carbon Compounds Containing A Hetero Ring Having Oxygen Or Sulfur (AREA)
JP2004128478A 2004-04-23 2004-04-23 含窒素有機化合物、化学増幅型レジスト材料及びパターン形成方法 Expired - Lifetime JP4502115B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2004128478A JP4502115B2 (ja) 2004-04-23 2004-04-23 含窒素有機化合物、化学増幅型レジスト材料及びパターン形成方法
US11/110,927 US7261995B2 (en) 2004-04-23 2005-04-21 Nitrogen-containing organic compound, chemically amplified resist composition and patterning process
TW094112901A TW200538868A (en) 2004-04-23 2005-04-22 Nitrogen-containing organic compound, chemical amplification type resist material and method for forming pattern
KR1020050033606A KR100829700B1 (ko) 2004-04-23 2005-04-22 질소 함유 유기 화합물, 화학 증폭형 레지스트 재료 및패턴 형성 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004128478A JP4502115B2 (ja) 2004-04-23 2004-04-23 含窒素有機化合物、化学増幅型レジスト材料及びパターン形成方法

Publications (2)

Publication Number Publication Date
JP2005306812A JP2005306812A (ja) 2005-11-04
JP4502115B2 true JP4502115B2 (ja) 2010-07-14

Family

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Family Applications (1)

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JP2004128478A Expired - Lifetime JP4502115B2 (ja) 2004-04-23 2004-04-23 含窒素有機化合物、化学増幅型レジスト材料及びパターン形成方法

Country Status (4)

Country Link
US (1) US7261995B2 (https=)
JP (1) JP4502115B2 (https=)
KR (1) KR100829700B1 (https=)
TW (1) TW200538868A (https=)

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EP1720072B1 (en) * 2005-05-01 2019-06-05 Rohm and Haas Electronic Materials, L.L.C. Compositons and processes for immersion lithography
KR100764374B1 (ko) * 2005-10-31 2007-10-08 주식회사 하이닉스반도체 이머젼 리소그라피 용액 제거용 조성물 및 이를 이용한이머젼 리소그라피 공정을 포함하는 반도체 소자 제조방법
GB0619041D0 (en) * 2006-09-27 2006-11-08 Imec Inter Uni Micro Electr Watermark defect reduction by resist optimisation
CN102253596B (zh) * 2006-10-30 2014-05-14 罗门哈斯电子材料有限公司 浸渍平版印刷用组合物和浸渍平版印刷方法
JP5124255B2 (ja) * 2007-10-11 2013-01-23 東京応化工業株式会社 レジスト組成物およびレジストパターン形成方法
US8257902B2 (en) 2007-11-05 2012-09-04 Deyan Wang Compositons and processes for immersion lithography
US20110189618A1 (en) * 2008-09-05 2011-08-04 Sumitomo Chemical Company, Limited Resist processing method
WO2012036250A1 (ja) * 2010-09-17 2012-03-22 Jsr株式会社 感放射線性樹脂組成物、重合体及びレジストパターン形成方法
JP5454458B2 (ja) * 2010-11-25 2014-03-26 信越化学工業株式会社 ポジ型レジスト材料及びパターン形成方法
JP5527236B2 (ja) 2011-01-31 2014-06-18 信越化学工業株式会社 ポジ型化学増幅レジスト材料、パターン形成方法及び酸分解性ケトエステル化合物
JP5434938B2 (ja) 2011-03-01 2014-03-05 信越化学工業株式会社 化学増幅レジスト材料及びパターン形成方法
JP2013152450A (ja) * 2011-12-27 2013-08-08 Fujifilm Corp パターン形成方法、感活性光線性又は感放射線性樹脂組成物、レジスト膜、電子デバイスの製造方法及び電子デバイス
JP6457539B2 (ja) * 2014-08-22 2019-01-23 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、感活性光線性又は感放射線性膜、パターン形成方法、及び電子デバイスの製造方法
KR102326126B1 (ko) 2014-12-05 2021-11-15 삼성전자주식회사 포토레지스트용 고분자, 패턴 형성 방법 및 반도체 장치의 제조 방법
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Also Published As

Publication number Publication date
JP2005306812A (ja) 2005-11-04
US20050238993A1 (en) 2005-10-27
KR20060047422A (ko) 2006-05-18
TWI303349B (https=) 2008-11-21
TW200538868A (en) 2005-12-01
KR100829700B1 (ko) 2008-05-14
US7261995B2 (en) 2007-08-28

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