KR100829700B1 - 질소 함유 유기 화합물, 화학 증폭형 레지스트 재료 및패턴 형성 방법 - Google Patents

질소 함유 유기 화합물, 화학 증폭형 레지스트 재료 및패턴 형성 방법 Download PDF

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Publication number
KR100829700B1
KR100829700B1 KR1020050033606A KR20050033606A KR100829700B1 KR 100829700 B1 KR100829700 B1 KR 100829700B1 KR 1020050033606 A KR1020050033606 A KR 1020050033606A KR 20050033606 A KR20050033606 A KR 20050033606A KR 100829700 B1 KR100829700 B1 KR 100829700B1
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KR
South Korea
Prior art keywords
group
bis
nitrogen
carbon atoms
containing organic
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Expired - Fee Related
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KR1020050033606A
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English (en)
Korean (ko)
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KR20060047422A (ko
Inventor
다께루 와따나베
고지 하세가와
가쯔야 다께무라
가즈미 노다
Original Assignee
신에쓰 가가꾸 고교 가부시끼가이샤
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Publication of KR20060047422A publication Critical patent/KR20060047422A/ko
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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • E—FIXED CONSTRUCTIONS
    • E06—DOORS, WINDOWS, SHUTTERS, OR ROLLER BLINDS IN GENERAL; LADDERS
    • E06B—FIXED OR MOVABLE CLOSURES FOR OPENINGS IN BUILDINGS, VEHICLES, FENCES OR LIKE ENCLOSURES IN GENERAL, e.g. DOORS, WINDOWS, BLINDS, GATES
    • E06B7/00—Special arrangements or measures in connection with doors or windows
    • E06B7/26—Rain or draught deflectors, e.g. under sliding wings also protection against light for doors
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D493/00—Heterocyclic compounds containing oxygen atoms as the only ring hetero atoms in the condensed system
    • C07D493/02—Heterocyclic compounds containing oxygen atoms as the only ring hetero atoms in the condensed system in which the condensed system contains two hetero rings
    • C07D493/08—Bridged systems
    • E—FIXED CONSTRUCTIONS
    • E06—DOORS, WINDOWS, SHUTTERS, OR ROLLER BLINDS IN GENERAL; LADDERS
    • E06B—FIXED OR MOVABLE CLOSURES FOR OPENINGS IN BUILDINGS, VEHICLES, FENCES OR LIKE ENCLOSURES IN GENERAL, e.g. DOORS, WINDOWS, BLINDS, GATES
    • E06B7/00—Special arrangements or measures in connection with doors or windows
    • E06B7/16—Sealing arrangements on wings or parts co-operating with the wings
    • E06B7/22—Sealing arrangements on wings or parts co-operating with the wings by means of elastic edgings, e.g. elastic rubber tubes; by means of resilient edgings, e.g. felt or plush strips, resilient metal strips
    • E06B7/23—Plastic, sponge rubber, or like strips or tubes
    • E06B7/2305—Plastic, sponge rubber, or like strips or tubes with an integrally formed part for fixing the edging
    • E06B7/2307—Plastic, sponge rubber, or like strips or tubes with an integrally formed part for fixing the edging with a single sealing-line or -plane between the wing and the part co-operating with the wing
    • E06B7/231—Plastic, sponge rubber, or like strips or tubes with an integrally formed part for fixing the edging with a single sealing-line or -plane between the wing and the part co-operating with the wing with a solid sealing part
    • E—FIXED CONSTRUCTIONS
    • E06—DOORS, WINDOWS, SHUTTERS, OR ROLLER BLINDS IN GENERAL; LADDERS
    • E06B—FIXED OR MOVABLE CLOSURES FOR OPENINGS IN BUILDINGS, VEHICLES, FENCES OR LIKE ENCLOSURES IN GENERAL, e.g. DOORS, WINDOWS, BLINDS, GATES
    • E06B7/00—Special arrangements or measures in connection with doors or windows
    • E06B7/16—Sealing arrangements on wings or parts co-operating with the wings
    • E06B7/22—Sealing arrangements on wings or parts co-operating with the wings by means of elastic edgings, e.g. elastic rubber tubes; by means of resilient edgings, e.g. felt or plush strips, resilient metal strips
    • E06B7/23—Plastic, sponge rubber, or like strips or tubes
    • E06B7/2314—Plastic, sponge rubber, or like strips or tubes characterised by the material
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G03F7/0758—Macromolecular compounds containing Si-O, Si-C or Si-N bonds with silicon- containing groups in the side chains

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Civil Engineering (AREA)
  • Structural Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Heterocyclic Carbon Compounds Containing A Hetero Ring Having Oxygen Or Sulfur (AREA)
KR1020050033606A 2004-04-23 2005-04-22 질소 함유 유기 화합물, 화학 증폭형 레지스트 재료 및패턴 형성 방법 Expired - Fee Related KR100829700B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2004-00128478 2004-04-23
JP2004128478A JP4502115B2 (ja) 2004-04-23 2004-04-23 含窒素有機化合物、化学増幅型レジスト材料及びパターン形成方法

Publications (2)

Publication Number Publication Date
KR20060047422A KR20060047422A (ko) 2006-05-18
KR100829700B1 true KR100829700B1 (ko) 2008-05-14

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020050033606A Expired - Fee Related KR100829700B1 (ko) 2004-04-23 2005-04-22 질소 함유 유기 화합물, 화학 증폭형 레지스트 재료 및패턴 형성 방법

Country Status (4)

Country Link
US (1) US7261995B2 (https=)
JP (1) JP4502115B2 (https=)
KR (1) KR100829700B1 (https=)
TW (1) TW200538868A (https=)

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EP1720072B1 (en) * 2005-05-01 2019-06-05 Rohm and Haas Electronic Materials, L.L.C. Compositons and processes for immersion lithography
KR100764374B1 (ko) * 2005-10-31 2007-10-08 주식회사 하이닉스반도체 이머젼 리소그라피 용액 제거용 조성물 및 이를 이용한이머젼 리소그라피 공정을 포함하는 반도체 소자 제조방법
GB0619041D0 (en) * 2006-09-27 2006-11-08 Imec Inter Uni Micro Electr Watermark defect reduction by resist optimisation
CN102253596B (zh) * 2006-10-30 2014-05-14 罗门哈斯电子材料有限公司 浸渍平版印刷用组合物和浸渍平版印刷方法
JP5124255B2 (ja) * 2007-10-11 2013-01-23 東京応化工業株式会社 レジスト組成物およびレジストパターン形成方法
US8257902B2 (en) 2007-11-05 2012-09-04 Deyan Wang Compositons and processes for immersion lithography
US20110189618A1 (en) * 2008-09-05 2011-08-04 Sumitomo Chemical Company, Limited Resist processing method
WO2012036250A1 (ja) * 2010-09-17 2012-03-22 Jsr株式会社 感放射線性樹脂組成物、重合体及びレジストパターン形成方法
JP5454458B2 (ja) * 2010-11-25 2014-03-26 信越化学工業株式会社 ポジ型レジスト材料及びパターン形成方法
JP5527236B2 (ja) 2011-01-31 2014-06-18 信越化学工業株式会社 ポジ型化学増幅レジスト材料、パターン形成方法及び酸分解性ケトエステル化合物
JP5434938B2 (ja) 2011-03-01 2014-03-05 信越化学工業株式会社 化学増幅レジスト材料及びパターン形成方法
JP2013152450A (ja) * 2011-12-27 2013-08-08 Fujifilm Corp パターン形成方法、感活性光線性又は感放射線性樹脂組成物、レジスト膜、電子デバイスの製造方法及び電子デバイス
JP6457539B2 (ja) * 2014-08-22 2019-01-23 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、感活性光線性又は感放射線性膜、パターン形成方法、及び電子デバイスの製造方法
KR102326126B1 (ko) 2014-12-05 2021-11-15 삼성전자주식회사 포토레지스트용 고분자, 패턴 형성 방법 및 반도체 장치의 제조 방법
US11021514B2 (en) 2016-06-01 2021-06-01 Athira Pharma, Inc. Compounds
JP7257134B2 (ja) * 2018-12-03 2023-04-13 株式会社カネカ ポジ型感光性組成物、パターン硬化膜およびその製造方法
US11194254B2 (en) * 2019-11-06 2021-12-07 International Business Machines Corporation Lithography process delay characterization and effective dose compensation

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JP2004083532A (ja) 2002-08-29 2004-03-18 Mitsui Chemicals Inc ７−オキサビシクロ〔２．２．１〕ヘプタンジメチルアミン類、およびそれらの製造方法
KR20040028553A (ko) * 2002-09-30 2004-04-03 신에쓰 가가꾸 고교 가부시끼가이샤 에스테르 화합물, 고분자 화합물, 레지스트 재료 및 패턴형성 방법

Also Published As

Publication number Publication date
JP2005306812A (ja) 2005-11-04
US20050238993A1 (en) 2005-10-27
JP4502115B2 (ja) 2010-07-14
KR20060047422A (ko) 2006-05-18
TWI303349B (https=) 2008-11-21
TW200538868A (en) 2005-12-01
US7261995B2 (en) 2007-08-28

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