TWI303349B - - Google Patents

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Publication number
TWI303349B
TWI303349B TW094112901A TW94112901A TWI303349B TW I303349 B TWI303349 B TW I303349B TW 094112901 A TW094112901 A TW 094112901A TW 94112901 A TW94112901 A TW 94112901A TW I303349 B TWI303349 B TW I303349B
Authority
TW
Taiwan
Prior art keywords
group
polymer
amine
nitrogen
sulfonate
Prior art date
Application number
TW094112901A
Other languages
English (en)
Chinese (zh)
Other versions
TW200538868A (en
Inventor
Takeru Watanabe
Koji Hasegawa
Katsuya Takemura
Kazumi Noda
Original Assignee
Shinetsu Chemical Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinetsu Chemical Co filed Critical Shinetsu Chemical Co
Publication of TW200538868A publication Critical patent/TW200538868A/zh
Application granted granted Critical
Publication of TWI303349B publication Critical patent/TWI303349B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • E—FIXED CONSTRUCTIONS
    • E06—DOORS, WINDOWS, SHUTTERS, OR ROLLER BLINDS IN GENERAL; LADDERS
    • E06B—FIXED OR MOVABLE CLOSURES FOR OPENINGS IN BUILDINGS, VEHICLES, FENCES OR LIKE ENCLOSURES IN GENERAL, e.g. DOORS, WINDOWS, BLINDS, GATES
    • E06B7/00—Special arrangements or measures in connection with doors or windows
    • E06B7/26—Rain or draught deflectors, e.g. under sliding wings also protection against light for doors
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D493/00—Heterocyclic compounds containing oxygen atoms as the only ring hetero atoms in the condensed system
    • C07D493/02—Heterocyclic compounds containing oxygen atoms as the only ring hetero atoms in the condensed system in which the condensed system contains two hetero rings
    • C07D493/08—Bridged systems
    • E—FIXED CONSTRUCTIONS
    • E06—DOORS, WINDOWS, SHUTTERS, OR ROLLER BLINDS IN GENERAL; LADDERS
    • E06B—FIXED OR MOVABLE CLOSURES FOR OPENINGS IN BUILDINGS, VEHICLES, FENCES OR LIKE ENCLOSURES IN GENERAL, e.g. DOORS, WINDOWS, BLINDS, GATES
    • E06B7/00—Special arrangements or measures in connection with doors or windows
    • E06B7/16—Sealing arrangements on wings or parts co-operating with the wings
    • E06B7/22—Sealing arrangements on wings or parts co-operating with the wings by means of elastic edgings, e.g. elastic rubber tubes; by means of resilient edgings, e.g. felt or plush strips, resilient metal strips
    • E06B7/23—Plastic, sponge rubber, or like strips or tubes
    • E06B7/2305—Plastic, sponge rubber, or like strips or tubes with an integrally formed part for fixing the edging
    • E06B7/2307—Plastic, sponge rubber, or like strips or tubes with an integrally formed part for fixing the edging with a single sealing-line or -plane between the wing and the part co-operating with the wing
    • E06B7/231—Plastic, sponge rubber, or like strips or tubes with an integrally formed part for fixing the edging with a single sealing-line or -plane between the wing and the part co-operating with the wing with a solid sealing part
    • E—FIXED CONSTRUCTIONS
    • E06—DOORS, WINDOWS, SHUTTERS, OR ROLLER BLINDS IN GENERAL; LADDERS
    • E06B—FIXED OR MOVABLE CLOSURES FOR OPENINGS IN BUILDINGS, VEHICLES, FENCES OR LIKE ENCLOSURES IN GENERAL, e.g. DOORS, WINDOWS, BLINDS, GATES
    • E06B7/00—Special arrangements or measures in connection with doors or windows
    • E06B7/16—Sealing arrangements on wings or parts co-operating with the wings
    • E06B7/22—Sealing arrangements on wings or parts co-operating with the wings by means of elastic edgings, e.g. elastic rubber tubes; by means of resilient edgings, e.g. felt or plush strips, resilient metal strips
    • E06B7/23—Plastic, sponge rubber, or like strips or tubes
    • E06B7/2314—Plastic, sponge rubber, or like strips or tubes characterised by the material
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G03F7/0758—Macromolecular compounds containing Si-O, Si-C or Si-N bonds with silicon- containing groups in the side chains

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Civil Engineering (AREA)
  • Structural Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Heterocyclic Carbon Compounds Containing A Hetero Ring Having Oxygen Or Sulfur (AREA)
TW094112901A 2004-04-23 2005-04-22 Nitrogen-containing organic compound, chemical amplification type resist material and method for forming pattern TW200538868A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004128478A JP4502115B2 (ja) 2004-04-23 2004-04-23 含窒素有機化合物、化学増幅型レジスト材料及びパターン形成方法

Publications (2)

Publication Number Publication Date
TW200538868A TW200538868A (en) 2005-12-01
TWI303349B true TWI303349B (https=) 2008-11-21

Family

ID=35136872

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094112901A TW200538868A (en) 2004-04-23 2005-04-22 Nitrogen-containing organic compound, chemical amplification type resist material and method for forming pattern

Country Status (4)

Country Link
US (1) US7261995B2 (https=)
JP (1) JP4502115B2 (https=)
KR (1) KR100829700B1 (https=)
TW (1) TW200538868A (https=)

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EP1720072B1 (en) * 2005-05-01 2019-06-05 Rohm and Haas Electronic Materials, L.L.C. Compositons and processes for immersion lithography
KR100764374B1 (ko) * 2005-10-31 2007-10-08 주식회사 하이닉스반도체 이머젼 리소그라피 용액 제거용 조성물 및 이를 이용한이머젼 리소그라피 공정을 포함하는 반도체 소자 제조방법
GB0619041D0 (en) * 2006-09-27 2006-11-08 Imec Inter Uni Micro Electr Watermark defect reduction by resist optimisation
CN102253596B (zh) * 2006-10-30 2014-05-14 罗门哈斯电子材料有限公司 浸渍平版印刷用组合物和浸渍平版印刷方法
JP5124255B2 (ja) * 2007-10-11 2013-01-23 東京応化工業株式会社 レジスト組成物およびレジストパターン形成方法
US8257902B2 (en) 2007-11-05 2012-09-04 Deyan Wang Compositons and processes for immersion lithography
US20110189618A1 (en) * 2008-09-05 2011-08-04 Sumitomo Chemical Company, Limited Resist processing method
WO2012036250A1 (ja) * 2010-09-17 2012-03-22 Jsr株式会社 感放射線性樹脂組成物、重合体及びレジストパターン形成方法
JP5454458B2 (ja) * 2010-11-25 2014-03-26 信越化学工業株式会社 ポジ型レジスト材料及びパターン形成方法
JP5527236B2 (ja) 2011-01-31 2014-06-18 信越化学工業株式会社 ポジ型化学増幅レジスト材料、パターン形成方法及び酸分解性ケトエステル化合物
JP5434938B2 (ja) 2011-03-01 2014-03-05 信越化学工業株式会社 化学増幅レジスト材料及びパターン形成方法
JP2013152450A (ja) * 2011-12-27 2013-08-08 Fujifilm Corp パターン形成方法、感活性光線性又は感放射線性樹脂組成物、レジスト膜、電子デバイスの製造方法及び電子デバイス
JP6457539B2 (ja) * 2014-08-22 2019-01-23 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、感活性光線性又は感放射線性膜、パターン形成方法、及び電子デバイスの製造方法
KR102326126B1 (ko) 2014-12-05 2021-11-15 삼성전자주식회사 포토레지스트용 고분자, 패턴 형성 방법 및 반도체 장치의 제조 방법
US11021514B2 (en) 2016-06-01 2021-06-01 Athira Pharma, Inc. Compounds
JP7257134B2 (ja) * 2018-12-03 2023-04-13 株式会社カネカ ポジ型感光性組成物、パターン硬化膜およびその製造方法
US11194254B2 (en) * 2019-11-06 2021-12-07 International Business Machines Corporation Lithography process delay characterization and effective dose compensation

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Also Published As

Publication number Publication date
JP2005306812A (ja) 2005-11-04
US20050238993A1 (en) 2005-10-27
JP4502115B2 (ja) 2010-07-14
KR20060047422A (ko) 2006-05-18
TW200538868A (en) 2005-12-01
KR100829700B1 (ko) 2008-05-14
US7261995B2 (en) 2007-08-28

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