JP4495240B2 - 検出装置および検出装置の製造方法 - Google Patents
検出装置および検出装置の製造方法 Download PDFInfo
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- JP4495240B2 JP4495240B2 JP2008558088A JP2008558088A JP4495240B2 JP 4495240 B2 JP4495240 B2 JP 4495240B2 JP 2008558088 A JP2008558088 A JP 2008558088A JP 2008558088 A JP2008558088 A JP 2008558088A JP 4495240 B2 JP4495240 B2 JP 4495240B2
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/0206—Three-component magnetometers
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/04—Measuring direction or magnitude of magnetic fields or magnetic flux using the flux-gate principle
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/091—Constructional adaptation of the sensor to specific applications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0555—Shape
- H01L2224/05552—Shape in top view
- H01L2224/05554—Shape in top view being square
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48095—Kinked
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Measuring Magnetic Variables (AREA)
- Wire Bonding (AREA)
- Hall/Mr Elements (AREA)
- Geophysics And Detection Of Objects (AREA)
Description
Claims (5)
- 回路基板上に、少なくとも1つの感度軸を有する複数のセンサチップが直接実装された検出装置であって、
前記センサチップとして、前記感度軸が前記回路基板の一面に対して水平に配置された水平配置センサと、前記感度軸が前記回路基板の一面に対して交差する角度に配置された交差配置センサとを有しており、
前記水平配置センサと前記交差配置センサとが、同一の構成からなり、前記各センサチップにおいて同一の位置に形成された同一の電極を用いて回路基板と導通が図られており、
前記同一の電極が、前記各センサチップに一列状に配置して形成され、
少なくとも1つの前記各センサチップを、前記電極が形成されている電極形成面における前記電極が一列に配置された一側が前記回路基板側に位置するように配設し、
前記回路基板上に、前記センサチップの前記電極と前記回路基板との接続に用いられる配線を形成することを特徴とする検出装置。 - 前記センサチップの前記電極と前記配線とをボール状のコーナーバンプによって導電接続することを特徴とする請求項1に記載の検出装置。
- 前記各センサチップを、少なくとも前記感度軸によってX軸方向の地磁気の方位を検出するX軸用磁気センサ、前記感度軸によってY軸方向の地磁気を検出するY軸用磁気センサ、および前記感度軸によってZ軸方向の地磁気を検出するZ軸用磁気センサとすることを特徴とする請求項1または請求項2に記載の検出装置。
- 前記センサチップが、加速度を検知する加速度センサである請求項1または請求項2に記載の検出装置。
- 前記センサチップが、毎秒あたりの傾きの大きさと方向を検知する角速度センサである請求項1または請求項2に記載の検出装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007033273 | 2007-02-14 | ||
JP2007033273 | 2007-02-14 | ||
PCT/JP2008/052290 WO2008099822A1 (ja) | 2007-02-14 | 2008-02-13 | センサチップ、検出装置および検出装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2008099822A1 JPWO2008099822A1 (ja) | 2010-05-27 |
JP4495240B2 true JP4495240B2 (ja) | 2010-06-30 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008558088A Active JP4495240B2 (ja) | 2007-02-14 | 2008-02-13 | 検出装置および検出装置の製造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7992313B2 (ja) |
EP (1) | EP2116858B1 (ja) |
JP (1) | JP4495240B2 (ja) |
WO (1) | WO2008099822A1 (ja) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090072823A1 (en) * | 2007-09-17 | 2009-03-19 | Honeywell International Inc. | 3d integrated compass package |
JP5572259B2 (ja) * | 2011-03-11 | 2014-08-13 | アルプス電気株式会社 | 物理量センサ装置とその製造方法 |
JP6571411B2 (ja) * | 2014-07-04 | 2019-09-04 | ローム株式会社 | 半導体装置および半導体装置の製造方法 |
US9778324B2 (en) * | 2015-04-17 | 2017-10-03 | Apple Inc. | Yoke configuration to reduce high offset in X-, Y-, and Z-magnetic sensors |
JP6610178B2 (ja) * | 2015-11-09 | 2019-11-27 | Tdk株式会社 | 磁気センサ |
US10914796B2 (en) | 2016-02-05 | 2021-02-09 | Texas Instruments Incorporated | Integrated fluxgate device with three-dimensional sensing |
US20190041211A1 (en) * | 2016-03-22 | 2019-02-07 | Panasonic Intellectual Property Management Co., Ltd. | Sensor |
US10698005B2 (en) * | 2017-04-20 | 2020-06-30 | Asahi Kasei Microdevices Corporation | Magnetic detection device, current detection device, method for manufacturing magnetic detection device, and method for manufacturing current detection device |
KR102132821B1 (ko) * | 2018-11-09 | 2020-07-13 | 주식회사 아이에스시 | 테스트 커넥터 조립체용 id 칩 소켓, 이를 포함하는 테스트 커넥터 조립체 및 이를 포함하는 테스트 장치 세트 |
Citations (8)
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JP2005233620A (ja) * | 2004-02-17 | 2005-09-02 | Citizen Electronics Co Ltd | 磁気方位検出装置 |
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JP2005114489A (ja) * | 2003-10-06 | 2005-04-28 | Citizen Electronics Co Ltd | 磁気方位検出装置 |
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JP4120648B2 (ja) * | 2005-02-23 | 2008-07-16 | ヤマハ株式会社 | 携帯端末、携帯端末の制御方法、プログラムおよび記録媒体 |
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2008
- 2008-02-13 JP JP2008558088A patent/JP4495240B2/ja active Active
- 2008-02-13 EP EP20080711148 patent/EP2116858B1/en active Active
- 2008-02-13 WO PCT/JP2008/052290 patent/WO2008099822A1/ja active Application Filing
-
2009
- 2009-08-11 US US12/539,225 patent/US7992313B2/en active Active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH02111085A (ja) * | 1988-10-20 | 1990-04-24 | Aichi Tokei Denki Co Ltd | 強磁性磁気抵抗素子 |
JP2003066127A (ja) * | 2001-08-28 | 2003-03-05 | Alps Electric Co Ltd | 磁気センサの組立方法 |
JP2005123478A (ja) * | 2003-10-17 | 2005-05-12 | Asahi Kasei Electronics Co Ltd | 磁電変換装置 |
JP2005233620A (ja) * | 2004-02-17 | 2005-09-02 | Citizen Electronics Co Ltd | 磁気方位検出装置 |
WO2005085891A1 (en) * | 2004-02-27 | 2005-09-15 | Honeywell International Inc. | Vertical die chip-on-board |
JP2005274302A (ja) * | 2004-03-24 | 2005-10-06 | Yamaha Corp | 磁気センサ及び磁気センサユニット |
WO2006068909A1 (en) * | 2004-12-22 | 2006-06-29 | Honeywell International Inc. | Single package design for 3-axis magnetic sensor |
JP2006234615A (ja) * | 2005-02-25 | 2006-09-07 | Citizen Watch Co Ltd | 磁気センサ素子とその製造方法及び電子方位計 |
Also Published As
Publication number | Publication date |
---|---|
US20090293294A1 (en) | 2009-12-03 |
JPWO2008099822A1 (ja) | 2010-05-27 |
US7992313B2 (en) | 2011-08-09 |
EP2116858A1 (en) | 2009-11-11 |
EP2116858A4 (en) | 2012-02-22 |
EP2116858B1 (en) | 2013-01-02 |
WO2008099822A1 (ja) | 2008-08-21 |
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