JPWO2008099822A1 - 検出装置および検出装置の製造方法 - Google Patents
検出装置および検出装置の製造方法 Download PDFInfo
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- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/0206—Three-component magnetometers
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- G—PHYSICS
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- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
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- G01R33/04—Measuring direction or magnitude of magnetic fields or magnetic flux using the flux-gate principle
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- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
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- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48095—Kinked
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- H—ELECTRICITY
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
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- Condensed Matter Physics & Semiconductors (AREA)
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- Geophysics And Detection Of Objects (AREA)
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Abstract
Description
Claims (13)
- 検出装置の回路基板に実装される、少なくとも1つの感度軸を有するセンサチップであって、
前記センサチップの一面を前記回路基板に対向させて実装することにより前記感度軸が前記回路基板の一面に対して水平に配置されるように前記回路基板上に直接設置可能とする水平実装面と、前記センサチップの他の一面を前記回路基板に対向させて実装することにより前記感度軸が前記回路基板の一面に対して交差する角度に配置されるように前記回路基板上に直接設置可能とされている交差実装面とを有することを特徴とするセンサチップ。 - 前記センサチップに設けられた、前記センサチップと前記回路基板との導通を図るための電極が、前記水平実装面によって実装した場合であっても前記交差実装面によって実装した場合であっても同一の電極を用いることができるよう配置されていることを特徴とする、請求項1に記載のセンサチップ
- 前記電極が、一列状に配置されていることを特徴とする請求項2に記載のセンサチップ。
- 前記センサチップが略直方体形状であり、前記電極が、前記水平実装面および前記交差実装面のいずれか一方の面と、他方の面に対向する面とが接する辺に面して設けられていることを特徴とする請求項3に記載のセンサチップ。
- 回路基板上に、少なくとも1つの感度軸を有する複数のセンサチップが直接実装された検出装置であって、
前記センサチップが、前記感度軸が前記回路基板の一面に対して水平に配置された水平配置センサと、前記感度軸が前記回路基板の一面に対して交差する角度に配置された交差配置センサとを含んでおり、
前記水平配置センサと前記交差配置センサが、同一の構成からなることを特徴とする検出装置。 - 前記水平配置センサと前記交差配置センサとが、前記各センサにおいて同一の位置に形成された同一の電極を用いて回路基板と導通が図られていることを特徴とする請求項5に記載の検出装置。
- 前記同一の電極が、前記各センサチップに一列状に配置して形成されていることを特徴とする請求項6に記載の検出装置。
- 少なくとも1つの前記センサチップを、前記電極が形成されている電極形成面における前記電極が一列に配置された一側が前記回路基板側に位置するように配設し、
前記回路基板上に、前記センサチップの前記電極と前記回路基板との接続に用いられる配線を形成することを特徴とする請求項7に記載の検出装置。 - 前記センサチップの前記電極と前記配線とをボール状のコーナーバンプによって導電接続することを特徴とする請求項8に記載の検出装置。
- 前記各センサチップを、少なくとも前記感度軸によってX軸方向の地磁気の方位を検出するX軸用磁気センサ、前記感度軸によってY軸方向の地磁気を検出するY軸用磁気センサ、および前記感度軸によってZ軸方向の地磁気を検出するZ軸用磁気センサとすることを特徴とする請求項5から請求項9のいずれか1項に記載の検出装置。
- 回路基板上に、少なくとも1つの感度軸を有する複数のセンサチップを直接実装する検出装置装置の製造方法において、
前記センサチップを、同一のウエハにおいて製造された同一の構成からなる各センサチップから選択し、
前記各センサチップの前記感度軸をそれぞれ異なる所定の角度に向けて、前記各センサチップを設置することを特徴とする検出装置の製造方法。 - 前記各感度軸が、前記回路基板と水平な軸と、前記回路基板に交差する軸とを少なくとも含むことを特徴とする請求項11に記載の検出装置の製造方法。
- 前記各センサチップの特性を検査する検査工程を有し、前記同一のウエハにおいて前記特性が均一の各センサチップを選択して実装することを特徴とする請求項11に記載の検出装置の製造方法。
Applications Claiming Priority (3)
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JP2007033273 | 2007-02-14 | ||
JP2007033273 | 2007-02-14 | ||
PCT/JP2008/052290 WO2008099822A1 (ja) | 2007-02-14 | 2008-02-13 | センサチップ、検出装置および検出装置の製造方法 |
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JPWO2008099822A1 true JPWO2008099822A1 (ja) | 2010-05-27 |
JP4495240B2 JP4495240B2 (ja) | 2010-06-30 |
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US (1) | US7992313B2 (ja) |
EP (1) | EP2116858B1 (ja) |
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WO (1) | WO2008099822A1 (ja) |
Families Citing this family (9)
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US20090072823A1 (en) * | 2007-09-17 | 2009-03-19 | Honeywell International Inc. | 3d integrated compass package |
WO2012124423A1 (ja) * | 2011-03-11 | 2012-09-20 | アルプス電気株式会社 | 物理量センサ装置とその製造方法 |
JP6571411B2 (ja) * | 2014-07-04 | 2019-09-04 | ローム株式会社 | 半導体装置および半導体装置の製造方法 |
US9778324B2 (en) * | 2015-04-17 | 2017-10-03 | Apple Inc. | Yoke configuration to reduce high offset in X-, Y-, and Z-magnetic sensors |
JP6610178B2 (ja) * | 2015-11-09 | 2019-11-27 | Tdk株式会社 | 磁気センサ |
US10914796B2 (en) | 2016-02-05 | 2021-02-09 | Texas Instruments Incorporated | Integrated fluxgate device with three-dimensional sensing |
US20190041211A1 (en) * | 2016-03-22 | 2019-02-07 | Panasonic Intellectual Property Management Co., Ltd. | Sensor |
US10698005B2 (en) * | 2017-04-20 | 2020-06-30 | Asahi Kasei Microdevices Corporation | Magnetic detection device, current detection device, method for manufacturing magnetic detection device, and method for manufacturing current detection device |
KR102132821B1 (ko) * | 2018-11-09 | 2020-07-13 | 주식회사 아이에스시 | 테스트 커넥터 조립체용 id 칩 소켓, 이를 포함하는 테스트 커넥터 조립체 및 이를 포함하는 테스트 장치 세트 |
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2008
- 2008-02-13 EP EP20080711148 patent/EP2116858B1/en active Active
- 2008-02-13 WO PCT/JP2008/052290 patent/WO2008099822A1/ja active Application Filing
- 2008-02-13 JP JP2008558088A patent/JP4495240B2/ja active Active
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2009
- 2009-08-11 US US12/539,225 patent/US7992313B2/en active Active
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EP2116858A1 (en) | 2009-11-11 |
US7992313B2 (en) | 2011-08-09 |
EP2116858B1 (en) | 2013-01-02 |
EP2116858A4 (en) | 2012-02-22 |
WO2008099822A1 (ja) | 2008-08-21 |
US20090293294A1 (en) | 2009-12-03 |
JP4495240B2 (ja) | 2010-06-30 |
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