JP4491233B2 - 基材上に酸化物層を形成する方法 - Google Patents
基材上に酸化物層を形成する方法 Download PDFInfo
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- JP4491233B2 JP4491233B2 JP2003525919A JP2003525919A JP4491233B2 JP 4491233 B2 JP4491233 B2 JP 4491233B2 JP 2003525919 A JP2003525919 A JP 2003525919A JP 2003525919 A JP2003525919 A JP 2003525919A JP 4491233 B2 JP4491233 B2 JP 4491233B2
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- 238000000034 method Methods 0.000 title claims description 25
- 239000000758 substrate Substances 0.000 title claims description 22
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 18
- 239000007788 liquid Substances 0.000 claims description 17
- 239000002019 doping agent Substances 0.000 claims description 10
- 239000007789 gas Substances 0.000 claims description 10
- 150000001875 compounds Chemical class 0.000 claims description 9
- 238000000151 deposition Methods 0.000 claims description 9
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 9
- 239000011787 zinc oxide Substances 0.000 claims description 8
- 239000002994 raw material Substances 0.000 claims description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- 239000012159 carrier gas Substances 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 4
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- HQWPLXHWEZZGKY-UHFFFAOYSA-N diethylzinc Chemical compound CC[Zn]CC HQWPLXHWEZZGKY-UHFFFAOYSA-N 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- VXKWYPOMXBVZSJ-UHFFFAOYSA-N tetramethyltin Chemical compound C[Sn](C)(C)C VXKWYPOMXBVZSJ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 229910001887 tin oxide Inorganic materials 0.000 claims 1
- 239000005341 toughened glass Substances 0.000 description 14
- 238000006243 chemical reaction Methods 0.000 description 9
- 238000005229 chemical vapour deposition Methods 0.000 description 9
- 238000010438 heat treatment Methods 0.000 description 5
- 239000011521 glass Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- 239000000376 reactant Substances 0.000 description 3
- 229910052990 silicon hydride Inorganic materials 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910006404 SnO 2 Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 238000005728 strengthening Methods 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 230000001376 precipitating effect Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- BNEMLSQAJOPTGK-UHFFFAOYSA-N zinc;dioxido(oxo)tin Chemical compound [Zn+2].[O-][Sn]([O-])=O BNEMLSQAJOPTGK-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Vapour Deposition (AREA)
- Photovoltaic Devices (AREA)
- Chemically Coating (AREA)
- Manufacturing Of Electric Cables (AREA)
- Hybrid Cells (AREA)
Description
−酸素を基礎にした液状化合物、酸化物を形成するようにし向けられた金属の液状化合物、及びガス状又は液状でドーパントをそれぞれ含む原料を供給し、
−チャンバ内の温度を130〜300℃の範囲内にするとともに圧力を0.01〜2mbarの範囲内に確立し、
−前記液状化合物の表面から液体を、前記チャンバ内の圧力と前記原料を装填したコンテナ内の圧力とを前記圧力範囲に一定に保持し、かつ前記コンテナを前記チャンバに直接に結合することによって蒸発させ、キャリヤーガスを使用する必要もなくチャンバ内に前記原料を導入することができ、酸化物層が基材の表面上で形成されるようにドーパントとそれら原料とを共に反応させることができるチャンバに設けられた連絡路に前記原料を導入することである。
−基材と、
−上記のように定義された方法により基材の表面上に析出された導電性透明酸化物層と、
−その酸化物層の表面上に析出された光電活性層とを備えることである。
12 導電性透明酸化物層、酸化亜鉛層、層
14 光電活性層
16 外側の層
20 外側の層
22 後部接触層
24 反射層
26 チャンバ
28 加熱支持体、支持体
30 真空ポンプ
32,34,36 コンテナ
38 電極
40 電源
Claims (5)
- チャンバ(26)内に配置された基材(10)の表面上に導電性透明酸化物層(12)を析出させる方法であって、
−酸素を基礎にした液状化合物、酸化物を形成するようにし向けられた金属の液状化合物、及びガス状又は液状でドーパントをそれぞれ含む原料(32,34,36)を供給し、
−チャンバ内の温度を130〜300℃の範囲内にするとともに圧力を0.01〜2mbarの範囲内に確立し、
−前記液状化合物の表面から液体を、前記チャンバ内の圧力と前記原料を装填したコンテナ内の圧力とを前記圧力範囲に一定に保持し、かつ前記コンテナを前記チャンバに直接に結合することによって蒸発させ、キャリヤーガスを使用する必要もなくチャンバ内に前記原料を導入することができ、酸化物層が基材の表面上で形成されるようにドーパントとそれら原料とを共に反応させることができるチャンバに設けられた連絡路に前記原料を導入すること
を特徴とする方法。 - 酸化亜鉛の層を析出するための前記請求項1に記載された方法であって、該原料(32,34,36)が、水、液状のテトラメチル錫及びジボランを主成分とするガス混合物であることを特徴とする方法。
- 請求項1に記載された方法であって、チャンバ内で気化した液体のプラズマを形成することを更に含む前記請求項1に記載の方法。
- 酸化錫の層を析出するための請求項3に記載された方法であって、前記原料(32,34,36)が、水、液状のテトラメチル錫、及び四フッ化メタンを主成分とするガス混合物であることを特徴とする方法。
- 酸化亜鉛の層を析出するための請求項3に記載された方法であって、前記原料(32,34,36)が、水、液状のジエチル亜鉛、及び四フッ化メタンを主成分とするガス混合物であることを特徴とする方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP01810840A EP1289025A1 (fr) | 2001-08-30 | 2001-08-30 | Procédé de dépot d'une couche d'oxyde sur un substrat et cellule photovoltaique utilisant ce substrat |
PCT/CH2002/000458 WO2003021690A2 (fr) | 2001-08-30 | 2002-08-23 | Procede de depot d'une couche d'oxyde sur un substrat et cellule photovoltaique utilisant ce substrat |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005501182A JP2005501182A (ja) | 2005-01-13 |
JP4491233B2 true JP4491233B2 (ja) | 2010-06-30 |
Family
ID=8184115
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003525919A Expired - Lifetime JP4491233B2 (ja) | 2001-08-30 | 2002-08-23 | 基材上に酸化物層を形成する方法 |
Country Status (8)
Country | Link |
---|---|
US (1) | US7390731B2 (ja) |
EP (2) | EP1289025A1 (ja) |
JP (1) | JP4491233B2 (ja) |
CN (1) | CN1326255C (ja) |
AU (1) | AU2002322952A1 (ja) |
DE (1) | DE60215523T2 (ja) |
ES (1) | ES2274069T3 (ja) |
WO (1) | WO2003021690A2 (ja) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE502005000868D1 (de) * | 2004-02-13 | 2007-07-26 | Shell Solar Gmbh | Einrichtung zum aufbringen einer flüssigen dotierungsstofflösung auf einem wafer |
JP4939058B2 (ja) * | 2004-02-16 | 2012-05-23 | 株式会社カネカ | 透明導電膜の製造方法、及びタンデム型薄膜光電変換装置の製造方法 |
JP4918224B2 (ja) * | 2005-01-21 | 2012-04-18 | 昭和シェル石油株式会社 | 透明導電膜製膜装置及び多層透明導電膜連続製膜装置 |
US8197914B2 (en) | 2005-11-21 | 2012-06-12 | Air Products And Chemicals, Inc. | Method for depositing zinc oxide at low temperatures and products formed thereby |
EP1840966A1 (fr) * | 2006-03-30 | 2007-10-03 | Universite De Neuchatel | Couche conductrice transparente et texturée et son procédé de réalisation |
MY148287A (en) * | 2006-08-29 | 2013-03-29 | Pilkington Group Ltd | Method of making a low-resistivity, doped zinc oxide coated glass article and the coated glass article made thereby |
US20080128022A1 (en) * | 2006-11-15 | 2008-06-05 | First Solar, Inc. | Photovoltaic device including a tin oxide protective layer |
DE102006062019A1 (de) * | 2006-12-29 | 2008-07-03 | Näbauer, Anton, Dr. | Verfahren zur Herstellung von mechanisch stabilen Dünnschicht Photovoltaik Solarmodulen unter Verwendung von Glas |
US8203071B2 (en) | 2007-01-18 | 2012-06-19 | Applied Materials, Inc. | Multi-junction solar cells and methods and apparatuses for forming the same |
US7741144B2 (en) | 2007-11-02 | 2010-06-22 | Applied Materials, Inc. | Plasma treatment between deposition processes |
US20100264035A1 (en) * | 2009-04-15 | 2010-10-21 | Solopower, Inc. | Reel-to-reel plating of conductive grids for flexible thin film solar cells |
US9528182B2 (en) | 2009-06-22 | 2016-12-27 | Arkema Inc. | Chemical vapor deposition using N,O polydentate ligand complexes of metals |
JP5508800B2 (ja) * | 2009-09-30 | 2014-06-04 | 株式会社カネカ | 薄膜の製造方法、並びに、太陽電池の製造方法 |
US8525019B2 (en) | 2010-07-01 | 2013-09-03 | Primestar Solar, Inc. | Thin film article and method for forming a reduced conductive area in transparent conductive films for photovoltaic modules |
US20130340817A1 (en) | 2010-09-03 | 2013-12-26 | Oerlikon Solar Ag, Trubbach | Thin film silicon solar cell in tandem junction configuration on textured glass |
US8628997B2 (en) * | 2010-10-01 | 2014-01-14 | Stion Corporation | Method and device for cadmium-free solar cells |
US8906732B2 (en) * | 2010-10-01 | 2014-12-09 | Stion Corporation | Method and device for cadmium-free solar cells |
DE102015215434A1 (de) * | 2015-08-13 | 2017-02-16 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zur Abscheidung dünner Schichten |
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US4513057A (en) | 1982-06-10 | 1985-04-23 | Hughes Aircraft Company | Process for forming sulfide layers |
US4605565A (en) * | 1982-12-09 | 1986-08-12 | Energy Conversion Devices, Inc. | Method of depositing a highly conductive, highly transmissive film |
JPH0682625B2 (ja) * | 1985-06-04 | 1994-10-19 | シーメンス ソーラー インダストリーズ,エル.ピー. | 酸化亜鉛膜の蒸着方法 |
JPS6289873A (ja) * | 1985-10-14 | 1987-04-24 | Semiconductor Energy Lab Co Ltd | 透明導電膜形成方法 |
US4640221A (en) * | 1985-10-30 | 1987-02-03 | International Business Machines Corporation | Vacuum deposition system with improved mass flow control |
US5252140A (en) * | 1987-07-24 | 1993-10-12 | Shigeyoshi Kobayashi | Solar cell substrate and process for its production |
JPH01298164A (ja) * | 1988-05-25 | 1989-12-01 | Canon Inc | 機能性堆積膜の形成方法 |
US4990286A (en) * | 1989-03-17 | 1991-02-05 | President And Fellows Of Harvard College | Zinc oxyfluoride transparent conductor |
JP2538042B2 (ja) * | 1989-03-29 | 1996-09-25 | 株式会社エステック | 有機金属化合物の気化供給方法とその装置 |
JP2881929B2 (ja) * | 1990-03-27 | 1999-04-12 | 松下電器産業株式会社 | アルミナ膜の製造方法 |
US5711816A (en) * | 1990-07-06 | 1998-01-27 | Advanced Technolgy Materials, Inc. | Source reagent liquid delivery apparatus, and chemical vapor deposition system comprising same |
JP3380610B2 (ja) * | 1993-11-30 | 2003-02-24 | 株式会社サムコインターナショナル研究所 | 液体原料cvd装置 |
US5397920A (en) * | 1994-03-24 | 1995-03-14 | Minnesota Mining And Manufacturing Company | Light transmissive, electrically-conductive, oxide film and methods of production |
US6096389A (en) * | 1995-09-14 | 2000-08-01 | Canon Kabushiki Kaisha | Method and apparatus for forming a deposited film using a microwave CVD process |
FR2743193B1 (fr) | 1996-01-02 | 1998-04-30 | Univ Neuchatel | Procede et dispositif de depot d'au moins une couche de silicium hydrogene microcristallin ou nanocristallin intrinseque, et cellule photovoltaique et transistor a couches minces obtenus par la mise en oeuvre de ce procede |
JP4510186B2 (ja) * | 1999-09-28 | 2010-07-21 | 株式会社アルバック | カーボン薄膜製造方法 |
-
2001
- 2001-08-30 EP EP01810840A patent/EP1289025A1/fr not_active Withdrawn
-
2002
- 2002-08-23 CN CNB028170067A patent/CN1326255C/zh not_active Expired - Fee Related
- 2002-08-23 EP EP02754092A patent/EP1421630B1/fr not_active Expired - Fee Related
- 2002-08-23 DE DE60215523T patent/DE60215523T2/de not_active Expired - Lifetime
- 2002-08-23 JP JP2003525919A patent/JP4491233B2/ja not_active Expired - Lifetime
- 2002-08-23 AU AU2002322952A patent/AU2002322952A1/en not_active Abandoned
- 2002-08-23 WO PCT/CH2002/000458 patent/WO2003021690A2/fr active IP Right Grant
- 2002-08-23 ES ES02754092T patent/ES2274069T3/es not_active Expired - Lifetime
- 2002-08-23 US US10/488,174 patent/US7390731B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP1421630A2 (fr) | 2004-05-26 |
AU2002322952A1 (en) | 2003-03-18 |
EP1421630B1 (fr) | 2006-10-18 |
JP2005501182A (ja) | 2005-01-13 |
EP1289025A1 (fr) | 2003-03-05 |
WO2003021690A2 (fr) | 2003-03-13 |
US20040235286A1 (en) | 2004-11-25 |
ES2274069T3 (es) | 2007-05-16 |
WO2003021690A3 (fr) | 2003-11-06 |
CN1550045A (zh) | 2004-11-24 |
US7390731B2 (en) | 2008-06-24 |
CN1326255C (zh) | 2007-07-11 |
DE60215523D1 (de) | 2006-11-30 |
DE60215523T2 (de) | 2007-06-21 |
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