JP4490439B2 - 分布制御ブロックコポリマーから調製した光重合性組成物およびフレキソ印刷版 - Google Patents
分布制御ブロックコポリマーから調製した光重合性組成物およびフレキソ印刷版 Download PDFInfo
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- JP4490439B2 JP4490439B2 JP2006542561A JP2006542561A JP4490439B2 JP 4490439 B2 JP4490439 B2 JP 4490439B2 JP 2006542561 A JP2006542561 A JP 2006542561A JP 2006542561 A JP2006542561 A JP 2006542561A JP 4490439 B2 JP4490439 B2 JP 4490439B2
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- block
- copolymer
- monoalkenyl arene
- hydrogenation
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Classifications
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F8/00—Chemical modification by after-treatment
- C08F8/04—Reduction, e.g. hydrogenation
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F287/00—Macromolecular compounds obtained by polymerising monomers on to block polymers
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F297/00—Macromolecular compounds obtained by successively polymerising different monomer systems using a catalyst of the ionic or coordination type without deactivating the intermediate polymer
- C08F297/02—Macromolecular compounds obtained by successively polymerising different monomer systems using a catalyst of the ionic or coordination type without deactivating the intermediate polymer using a catalyst of the anionic type
- C08F297/04—Macromolecular compounds obtained by successively polymerising different monomer systems using a catalyst of the ionic or coordination type without deactivating the intermediate polymer using a catalyst of the anionic type polymerising vinyl aromatic monomers and conjugated dienes
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L53/00—Compositions of block copolymers containing at least one sequence of a polymer obtained by reactions only involving carbon-to-carbon unsaturated bonds; Compositions of derivatives of such polymers
- C08L53/02—Compositions of block copolymers containing at least one sequence of a polymer obtained by reactions only involving carbon-to-carbon unsaturated bonds; Compositions of derivatives of such polymers of vinyl-aromatic monomers and conjugated dienes
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L53/00—Compositions of block copolymers containing at least one sequence of a polymer obtained by reactions only involving carbon-to-carbon unsaturated bonds; Compositions of derivatives of such polymers
- C08L53/02—Compositions of block copolymers containing at least one sequence of a polymer obtained by reactions only involving carbon-to-carbon unsaturated bonds; Compositions of derivatives of such polymers of vinyl-aromatic monomers and conjugated dienes
- C08L53/025—Compositions of block copolymers containing at least one sequence of a polymer obtained by reactions only involving carbon-to-carbon unsaturated bonds; Compositions of derivatives of such polymers of vinyl-aromatic monomers and conjugated dienes modified
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
- G03F7/033—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polymers obtained by reactions only involving carbon-to-carbon unsaturated bonds, e.g. vinyl polymers
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0388—Macromolecular compounds which are rendered insoluble or differentially wettable with ethylenic or acetylenic bands in the side chains of the photopolymer
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- C—CHEMISTRY; METALLURGY
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Description
(a)非水素化スチレンジエンブロックコポリマーおよび水素化分布制御ブロックコポリマーを含むブロックコポリマー成分(前記水素化分布制御ブロックコポリマーは少なくとも1つのポリマーブロックAおよび少なくとも1つのポリマーブロックBを含み、
i)水素化前には、各Aブロックはモノアルケニルアレーンホモポリマーブロックであり、各Bブロックは少なくとも1種の共役ジエンと少なくとも1種のモノアルケニルアレーンとの分布制御コポリマーブロックであり、
ii)水素化の結果として、アレーン二重結合の約0〜10%が還元されており、共役ジエンの二重結合の少なくとも約90%が還元されており、
iii)各Aブロックは約3,000と約60,000の間の数平均分子量を有し、各Bブロックは約20,000と約300,000の間の数平均分子量を有し、
iv)各Bブロックは、共役ジエン単位を多く含有し、Aブロックに隣接する末端領域およびモノアルケニルアレーン単位を多く含有し、Aブロックに隣接しない1つまたは複数の領域を含み、
v)水素化ブロックコポリマー中のモノアルケニルアレーンの総量は約20重量パーセントから約80重量パーセントであり、
vi)各Bブロック中のモノアルケニルアレーンの重量パーセントは約10パーセントと約75パーセントの間にある。)、
(b)1種または複数の重合性エチレン系不飽和低分子量化合物、
(c)1種または複数の重合開始剤、および場合により
(d)全光重合性組成物を基準にして0から40重量%の1種または複数の助剤
を含む。
ブロック性%=(ブロック性スチレン単位/全スチレン単位)の100倍。
本発明を説明するために、次の実施例を示す。これらの実施例は本発明の範囲を限定すること意図したものではなく、そのように解釈すべきでない。特に断らない限り、量は重量部または重量百分率である。
比較例1において、S−EB−S KRATON G水素化ブロックコポリマーをKRATON D非水素化SIS線状逐次ブロックコポリマーと混合した。S−I−Sブロックコポリマーは,全体のスチレン含量18.7重量パーセントであり、ポリスチレン末端ブロックの合計分子量は約11,000、全体の分子量は約120,000であった。S−EB−Sブロックコポリマーは、約30重量パーセントの全スチレン含量、10,000のポリスチレン末端ブロックおよび約67,000の全体分子量を有する選択的に水素化されたスチレン−ブタジエン−スチレンブロックコポリマーであった。
100phr(85wt%S−I−S/15wt%ポリマー#25)
10phrへキサンジオールジアクリレート
10phrShellflex371Nナフテン系オイル(Shell)
4phrIrgacure651光開始剤(Ciba)
混合物B(コントロール)
100phrS−I−Sコポリマー
10phrへキサンジオールジアクリレート
10phrShellflex371Nナフテン系オイル
4phrIrgacure651光開始剤
Claims (4)
- a.非水素化スチレン/ジエンブロックコポリマーおよび水素化分布制御ブロックコポリマーを含むブロックコポリマー成分(前記水素化分布制御ブロックコポリマーは少なくとも1つのポリマーブロックAおよび少なくとも1つのポリマーブロックBを含み、
i)水素化前には、各Aブロックはモノアルケニルアレーンホモポリマーブロックであり、各Bブロックは少なくとも1種の共役ジエンと少なくとも1種のモノアルケニルアレーンとの分布制御コポリマーブロックであり、
ii)水素化の結果として、アレーン二重結合の0〜10%が還元され、および共役ジエン二重結合の少なくとも90%が還元され、
iii)各Aブロックの数平均分子量は3,000と60,000の間であり、各Bブロックの数平均分子量は20,000と300,000の間であり、
iv)各Bブロックは、モル%単位で共役ジエン単位を多く含有し、Aブロックに隣接する末端領域およびモル%単位でモノアルケニルアレーン単位を多く含有し、Aブロックに隣接しない1つまたは複数の領域を含み、共役ジエン単位を多く含有する上記末端領域は、Bブロックの各末端からBブロックの25モル%までであるBブロックの両末端領域からなり、
v)水素化分布制御ブロックコポリマー中のモノアルケニルアレーンの総量は20重量パーセントから80重量パーセントであり、
vi)各Bブロックにおけるモノアルケニルアレーンの重量パーセントは10パーセントと75パーセントの間であり、
vii)Bブロックのモノアルケニルアレーンブロック率指数は40%未満である。)
b.1種または複数の光重合性エチレン系不飽和化合物、
c.1種または複数の光重合開始剤、および場合により
d.全光重合性組成物を基準にして0から40重量%の、可塑剤、芳香族樹脂、さらに追加する相容性ゴム、充填剤、染料、顔料、抗酸化剤、抗オゾン剤、熱重合禁止剤、液体ポリ(イソプレン)及び液体ポリ(ブタジエン)からなる群から選択された1種または複数の助剤
を含む光重合性組成物。 - 請求項1に記載の光重合性組成物から誘導したフレキソ印刷版。
- 請求項2のフレキソ印刷版から作製したフレキソ印刷レリーフ形状。
- a.5から75重量パーセントの水素化分布制御ブロックコポリマー、および
b.95から25重量パーセントの非水素化星型スチレンブタジエンブロックコポリマー
を含み、前記分布制御ブロックコポリマーは少なくとも1つのポリマーブロックAおよび少なくとも1つのポリマーブロックBを有し、
i)水素化前には、各Aブロックはモノアルケニルアレーンホモポリマーブロックであり、各Bブロックは少なくとも1つの共役ジエンおよび少なくとも1つのモノアルケニルアレーンの分布制御コポリマーブロックであり、
ii)水素化の結果として、アレーン二重結合の0〜10%が還元され、および共役ジエン二重結合の少なくとも90%が還元され、
iii)各Aブロックの数平均分子量は3,000と60,000の間であり、各Bブロックの数平均分子量は20,000と300,000の間であり、
iv)各Bブロックは、モル%単位で共役ジエン単位を多く含有し、Aブロックに隣接する末端領域およびモル%単位でモノアルケニルアレーン単位を多く含有し、Aブロックに隣接しない1つまたは複数の領域を含み、共役ジエン単位を多く含有する上記末端領域は、Bブロックの各末端からBブロックの25モル%までであるBブロックの両末端領域からなり、
v)水素化分布制御ブロックコポリマー中のモノアルケニルアレーンの総量は20重量パーセントから80重量パーセントであり、
vi)各Bブロックにおけるモノアルケニルアレーンの重量パーセントは10パーセントと75パーセントの間であり、
vii)Bブロックのモノアルケニルアレーンブロック率指数は40%未満であり、
および、非水素化星型ブロックコポリマーは(C−D)nY(D)mなる構造を有する(式中Cブロックはスチレンのホモポリマーブロックであり、Dブロックはブタジエンおよびイソプレンから選択した1種または複数の共役ジエンのポリマーブロックであり、Yは結合剤残基であり、nは2から30の整数であり、mは1から10の整数である。)、透明な組成物。
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US10/681,608 US7012118B2 (en) | 2002-02-07 | 2003-10-08 | Photopolymerizable compositions and flexographic plates prepared from controlled distribution block copolymers |
PCT/US2004/032823 WO2006046936A1 (en) | 2003-10-08 | 2004-10-06 | Photopolymerizable compositions and flexographic plates prepared from controlled distribution block copolymers |
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JP2007511805A5 JP2007511805A5 (ja) | 2009-07-30 |
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US (1) | US7012118B2 (ja) |
EP (1) | EP1676173B1 (ja) |
JP (1) | JP4490439B2 (ja) |
CN (1) | CN100561343C (ja) |
DE (1) | DE602004027933D1 (ja) |
WO (1) | WO2006046936A1 (ja) |
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JP6837013B2 (ja) * | 2015-06-12 | 2021-03-03 | クレイトン・ポリマーズ・ユー・エス・エル・エル・シー | 軟質皮膜用組成物およびこれの使用 |
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- 2003-10-08 US US10/681,608 patent/US7012118B2/en not_active Expired - Lifetime
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2004
- 2004-10-06 DE DE602004027933T patent/DE602004027933D1/de not_active Expired - Lifetime
- 2004-10-06 WO PCT/US2004/032823 patent/WO2006046936A1/en active Search and Examination
- 2004-10-06 EP EP04794237A patent/EP1676173B1/en not_active Ceased
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CN100561343C (zh) | 2009-11-18 |
US20040072951A1 (en) | 2004-04-15 |
EP1676173B1 (en) | 2010-06-30 |
US7012118B2 (en) | 2006-03-14 |
WO2006046936A1 (en) | 2006-05-04 |
JP2007511805A (ja) | 2007-05-10 |
DE602004027933D1 (de) | 2010-08-12 |
EP1676173A1 (en) | 2006-07-05 |
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