JP4487026B2 - プラズマエッチング装置 - Google Patents

プラズマエッチング装置 Download PDF

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Publication number
JP4487026B2
JP4487026B2 JP23852699A JP23852699A JP4487026B2 JP 4487026 B2 JP4487026 B2 JP 4487026B2 JP 23852699 A JP23852699 A JP 23852699A JP 23852699 A JP23852699 A JP 23852699A JP 4487026 B2 JP4487026 B2 JP 4487026B2
Authority
JP
Japan
Prior art keywords
cathode electrode
substrate
plasma etching
cathode
glass mother
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP23852699A
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English (en)
Japanese (ja)
Other versions
JP2000091328A5 (https=
JP2000091328A (ja
Inventor
昌勲 朴
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of JP2000091328A publication Critical patent/JP2000091328A/ja
Publication of JP2000091328A5 publication Critical patent/JP2000091328A5/ja
Application granted granted Critical
Publication of JP4487026B2 publication Critical patent/JP4487026B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32559—Protection means, e.g. coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
JP23852699A 1998-08-26 1999-08-25 プラズマエッチング装置 Expired - Fee Related JP4487026B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1019980034587A KR100275671B1 (ko) 1998-08-26 1998-08-26 플라즈마 식각 설비
KR1998P34587 1998-08-26

Publications (3)

Publication Number Publication Date
JP2000091328A JP2000091328A (ja) 2000-03-31
JP2000091328A5 JP2000091328A5 (https=) 2006-10-05
JP4487026B2 true JP4487026B2 (ja) 2010-06-23

Family

ID=19548300

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23852699A Expired - Fee Related JP4487026B2 (ja) 1998-08-26 1999-08-25 プラズマエッチング装置

Country Status (4)

Country Link
JP (1) JP4487026B2 (https=)
KR (1) KR100275671B1 (https=)
CN (1) CN1157758C (https=)
TW (1) TW472320B (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001127041A (ja) * 1999-10-26 2001-05-11 Matsushita Electric Ind Co Ltd 基板のプラズマ処理装置およびプラズマ処理方法
EP1352415A2 (en) * 2000-10-23 2003-10-15 Applied Materials, Inc. Monitoring substrate processing using reflected radiation
CN102969361B (zh) * 2011-09-01 2015-09-23 中国科学院微电子研究所 光照稳定性非晶态金属氧化物tft器件以及显示器件
KR101384980B1 (ko) * 2012-06-25 2014-04-14 주식회사 테스 플라즈마 발생장치 및 이를 포함하는 박막증착장치
CN105225989B (zh) * 2015-10-13 2018-12-28 京东方科技集团股份有限公司 等离子刻蚀机
CN108711546B (zh) * 2018-04-28 2019-07-23 武汉华星光电技术有限公司 下电极及干蚀刻机
CN111970838B (zh) * 2020-08-24 2021-09-21 泉州市创智工业设计服务有限公司 一种用于生产电路板的蚀刻机

Also Published As

Publication number Publication date
KR20000014935A (ko) 2000-03-15
KR100275671B1 (ko) 2001-02-01
JP2000091328A (ja) 2000-03-31
CN1246724A (zh) 2000-03-08
CN1157758C (zh) 2004-07-14
TW472320B (en) 2002-01-11

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