JP4486768B2 - ネガ型電子線又はｘ線用化学増幅レジスト組成物 - Google Patents

ネガ型電子線又はｘ線用化学増幅レジスト組成物 Download PDF

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JP4486768B2
JP4486768B2 JP2001271992A JP2001271992A JP4486768B2 JP 4486768 B2 JP4486768 B2 JP 4486768B2 JP 2001271992 A JP2001271992 A JP 2001271992A JP 2001271992 A JP2001271992 A JP 2001271992A JP 4486768 B2 JP4486768 B2 JP 4486768B2
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electron beam
ray
resist composition
acid
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JP2003076020A5 (enExample
JP2003076020A (ja
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豊 阿出川
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Fujifilm Corp
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Fujifilm Corp
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JP2001271992A 2001-09-07 2001-09-07 ネガ型電子線又はｘ線用化学増幅レジスト組成物 Expired - Lifetime JP4486768B2 (ja)

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JP2001271992A JP4486768B2 (ja) 2001-09-07 2001-09-07 ネガ型電子線又はｘ線用化学増幅レジスト組成物

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JP2001271992A JP4486768B2 (ja) 2001-09-07 2001-09-07 ネガ型電子線又はｘ線用化学増幅レジスト組成物

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JP2003076020A JP2003076020A (ja) 2003-03-14
JP2003076020A5 JP2003076020A5 (enExample) 2006-01-19
JP4486768B2 true JP4486768B2 (ja) 2010-06-23

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Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007049593A1 (ja) * 2005-10-25 2007-05-03 Mitsubishi Rayon Co., Ltd. レジスト用重合体、レジスト組成物、パターンが形成された基板の製造方法、重合性モノマー、および重合性モノマーの製造方法
JP5148090B2 (ja) * 2005-11-16 2013-02-20 信越化学工業株式会社 レジスト材料及びこれを用いたパターン形成方法
JP5358369B2 (ja) * 2009-09-18 2013-12-04 富士フイルム株式会社 レジストパターン形成方法及びそれに用いられる現像液
JP5630181B2 (ja) * 2010-03-05 2014-11-26 大日本印刷株式会社 ネガ型レジスト組成物、当該レジスト組成物を用いたレリーフパターンの製造方法及びフォトマスクの製造方法

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