JP4481638B2 - 垂直接触型積層チップ - Google Patents

垂直接触型積層チップ Download PDF

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Publication number
JP4481638B2
JP4481638B2 JP2003507891A JP2003507891A JP4481638B2 JP 4481638 B2 JP4481638 B2 JP 4481638B2 JP 2003507891 A JP2003507891 A JP 2003507891A JP 2003507891 A JP2003507891 A JP 2003507891A JP 4481638 B2 JP4481638 B2 JP 4481638B2
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JP
Japan
Prior art keywords
contact surface
chip
contact
chip layer
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2003507891A
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English (en)
Japanese (ja)
Other versions
JP2004531083A (ja
JP2004531083A5 (enExample
Inventor
グラッスル，トーマス
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Giesecke and Devrient GmbH
Original Assignee
Giesecke and Devrient GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Giesecke and Devrient GmbH filed Critical Giesecke and Devrient GmbH
Publication of JP2004531083A publication Critical patent/JP2004531083A/ja
Publication of JP2004531083A5 publication Critical patent/JP2004531083A5/ja
Application granted granted Critical
Publication of JP4481638B2 publication Critical patent/JP4481638B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10D89/00
    • H01L25/0657—Stacked arrangements of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
    • H01L2225/04—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same main group of the same subclass of class H10
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06513—Bump or bump-like direct electrical connections between devices, e.g. flip-chip connection, solder bumps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
    • H01L2225/04—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same main group of the same subclass of class H10
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06541—Conductive via connections through the device, e.g. vertical interconnects, through silicon via [TSV]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Battery Mounting, Suspending (AREA)
  • Crushing And Grinding (AREA)
  • Bipolar Transistors (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2003507891A 2001-06-21 2002-06-20 垂直接触型積層チップ Expired - Fee Related JP4481638B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10130864A DE10130864A1 (de) 2001-06-21 2001-06-21 Vertikal kontaktierte, übereinander gestapelte Chips
PCT/EP2002/006861 WO2003001597A2 (de) 2001-06-21 2002-06-20 Vertikal kontaktierte, übereinander gestapelte chips

Publications (3)

Publication Number Publication Date
JP2004531083A JP2004531083A (ja) 2004-10-07
JP2004531083A5 JP2004531083A5 (enExample) 2009-01-08
JP4481638B2 true JP4481638B2 (ja) 2010-06-16

Family

ID=7689553

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003507891A Expired - Fee Related JP4481638B2 (ja) 2001-06-21 2002-06-20 垂直接触型積層チップ

Country Status (6)

Country Link
EP (1) EP1402575B1 (enExample)
JP (1) JP4481638B2 (enExample)
AT (1) ATE414328T1 (enExample)
AU (1) AU2002316990A1 (enExample)
DE (2) DE10130864A1 (enExample)
WO (1) WO2003001597A2 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8124429B2 (en) * 2006-12-15 2012-02-28 Richard Norman Reprogrammable circuit board with alignment-insensitive support for multiple component contact types
WO2008137511A1 (en) 2007-05-04 2008-11-13 Crossfire Technologies, Inc. Accessing or interconnecting integrated circuits

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61206249A (ja) * 1985-03-11 1986-09-12 Hitachi Ltd 積層半導体集積回路装置
DE69133311T2 (de) * 1990-10-15 2004-06-24 Aptix Corp., San Jose Verbindungssubstrat mit integrierter Schaltung zur programmierbaren Verbindung und Probenuntersuchung
US5424589A (en) * 1993-02-12 1995-06-13 The Board Of Trustees Of The Leland Stanford Junior University Electrically programmable inter-chip interconnect architecture
DE4314907C1 (de) * 1993-05-05 1994-08-25 Siemens Ag Verfahren zur Herstellung von vertikal miteinander elektrisch leitend kontaktierten Halbleiterbauelementen
DE19702121C1 (de) * 1997-01-22 1998-06-18 Siemens Ag Verfahren zur Herstellung von vertikalen Chipverbindungen
DE19813239C1 (de) * 1998-03-26 1999-12-23 Fraunhofer Ges Forschung Verdrahtungsverfahren zur Herstellung einer vertikalen integrierten Schaltungsstruktur und vertikale integrierte Schaltungsstruktur
JP2001127243A (ja) * 1999-10-26 2001-05-11 Sharp Corp 積層半導体装置

Also Published As

Publication number Publication date
JP2004531083A (ja) 2004-10-07
WO2003001597A3 (de) 2003-12-18
EP1402575A2 (de) 2004-03-31
DE10130864A1 (de) 2003-01-02
EP1402575B1 (de) 2008-11-12
DE50213010D1 (de) 2008-12-24
WO2003001597A2 (de) 2003-01-03
ATE414328T1 (de) 2008-11-15
AU2002316990A1 (en) 2003-01-08

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