JP4481040B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP4481040B2
JP4481040B2 JP2004064873A JP2004064873A JP4481040B2 JP 4481040 B2 JP4481040 B2 JP 4481040B2 JP 2004064873 A JP2004064873 A JP 2004064873A JP 2004064873 A JP2004064873 A JP 2004064873A JP 4481040 B2 JP4481040 B2 JP 4481040B2
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laser
region
laser beam
irradiation surface
semiconductor device
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Japanese (ja)
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JP2004297055A (ja
JP2004297055A5 (enExample
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幸一郎 田中
洋正 大石
舜平 山崎
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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JP2004064873A 2003-03-07 2004-03-08 半導体装置の作製方法 Expired - Fee Related JP4481040B2 (ja)

Priority Applications (1)

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JP2004064873A JP4481040B2 (ja) 2003-03-07 2004-03-08 半導体装置の作製方法

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Application Number Priority Date Filing Date Title
JP2003061133 2003-03-07
JP2004064873A JP4481040B2 (ja) 2003-03-07 2004-03-08 半導体装置の作製方法

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JP2004297055A JP2004297055A (ja) 2004-10-21
JP2004297055A5 JP2004297055A5 (enExample) 2006-07-20
JP4481040B2 true JP4481040B2 (ja) 2010-06-16

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Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100565806C (zh) 2004-07-30 2009-12-02 株式会社半导体能源研究所 激光辐照装置和激光辐照方法
KR101372869B1 (ko) 2006-09-29 2014-03-10 후지필름 가부시키가이샤 레이저 어닐 기술, 반도체 막, 반도체 장치, 및 전기 광학장치
JP5053610B2 (ja) * 2006-09-29 2012-10-17 富士フイルム株式会社 レーザアニール方法、半導体膜、半導体装置、及び電気光学装置
JP5053609B2 (ja) * 2006-09-29 2012-10-17 富士フイルム株式会社 レーザアニール技術、半導体膜、半導体装置、及び電気光学装置
JP5678333B2 (ja) * 2010-05-27 2015-03-04 株式会社ブイ・テクノロジー レーザアニール方法及び装置
JP5891504B2 (ja) * 2011-03-08 2016-03-23 株式会社Ｊｏｌｅｄ 薄膜トランジスタアレイ装置の製造方法
EP2899749A1 (en) * 2014-01-24 2015-07-29 Excico France Method for forming polycrystalline silicon by laser irradiation

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5629323A (en) * 1979-08-17 1981-03-24 Nec Corp Two-wavelength laser surface treating apparatus
JPS57183023A (en) * 1981-05-02 1982-11-11 Fujitsu Ltd Laser annealing
JPS57183024A (en) * 1981-05-02 1982-11-11 Fujitsu Ltd Laser annealing
JP2003347237A (ja) * 2002-05-30 2003-12-05 Mitsubishi Electric Corp 半導体装置の製造方法およびその製造装置
JP2004128421A (ja) * 2002-10-07 2004-04-22 Semiconductor Energy Lab Co Ltd レーザ照射方法およびレーザ照射装置、並びに半導体装置の作製方法
JP4364611B2 (ja) * 2002-11-29 2009-11-18 株式会社半導体エネルギー研究所 結晶性半導体膜の作製方法
JP4283656B2 (ja) * 2002-12-18 2009-06-24 株式会社半導体エネルギー研究所 半導体装置の作製方法、半導体装置及び電子機器
JP4969024B2 (ja) * 2003-01-21 2012-07-04 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4364674B2 (ja) * 2003-02-28 2009-11-18 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4515034B2 (ja) * 2003-02-28 2010-07-28 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4799825B2 (ja) * 2003-03-03 2011-10-26 株式会社半導体エネルギー研究所 レーザ照射方法

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