JP4468753B2 - 荷電粒子線露光装置及び該装置を用いたデバイス製造方法 - Google Patents

荷電粒子線露光装置及び該装置を用いたデバイス製造方法 Download PDF

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JP4468753B2
JP4468753B2 JP2004194770A JP2004194770A JP4468753B2 JP 4468753 B2 JP4468753 B2 JP 4468753B2 JP 2004194770 A JP2004194770 A JP 2004194770A JP 2004194770 A JP2004194770 A JP 2004194770A JP 4468753 B2 JP4468753 B2 JP 4468753B2
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magnetic
lens
electron beam
exposure apparatus
magnetic pole
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JP2004194770A
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Japanese (ja)
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JP2006019435A (ja
JP2006019435A5 (enExample
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進 後藤
康成 早田
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Canon Inc
Hitachi High Tech Corp
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Hitachi High Technologies Corp
Canon Inc
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JP2004194770A 2004-06-30 2004-06-30 荷電粒子線露光装置及び該装置を用いたデバイス製造方法 Expired - Fee Related JP4468753B2 (ja)

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JP2004194770A JP4468753B2 (ja) 2004-06-30 2004-06-30 荷電粒子線露光装置及び該装置を用いたデバイス製造方法

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JP2004194770A JP4468753B2 (ja) 2004-06-30 2004-06-30 荷電粒子線露光装置及び該装置を用いたデバイス製造方法

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JP2006019435A JP2006019435A (ja) 2006-01-19
JP2006019435A5 JP2006019435A5 (enExample) 2007-08-16
JP4468753B2 true JP4468753B2 (ja) 2010-05-26

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Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4913521B2 (ja) * 2006-09-29 2012-04-11 キヤノン株式会社 荷電粒子線装置及びデバイス製造方法
JP5230148B2 (ja) * 2007-09-04 2013-07-10 キヤノン株式会社 荷電粒子線描画装置及びデバイス製造方法
TWI477925B (zh) * 2011-10-04 2015-03-21 Nuflare Technology Inc Multi - beam charged particle beam mapping device and multi - beam charged particle beam rendering method
WO2018173829A1 (ja) * 2017-03-22 2018-09-27 株式会社ニコン 露光装置、露光方法、及び、デバイス製造方法
WO2024154184A1 (ja) * 2023-01-16 2024-07-25 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置

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