JP4459548B2 - Ｈｂｔリニアライザー・パワーブースター - Google Patents

Ｈｂｔリニアライザー・パワーブースター Download PDF

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Publication number
JP4459548B2
JP4459548B2 JP2003119673A JP2003119673A JP4459548B2 JP 4459548 B2 JP4459548 B2 JP 4459548B2 JP 2003119673 A JP2003119673 A JP 2003119673A JP 2003119673 A JP2003119673 A JP 2003119673A JP 4459548 B2 JP4459548 B2 JP 4459548B2
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JP
Japan
Prior art keywords
base
transistor
hbt
end connected
resistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2003119673A
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English (en)
Japanese (ja)
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JP2004007616A (ja
JP2004007616A5 (enExample
Inventor
ハワード、パターソン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP USA Inc
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NXP USA Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NXP USA Inc filed Critical NXP USA Inc
Publication of JP2004007616A publication Critical patent/JP2004007616A/ja
Publication of JP2004007616A5 publication Critical patent/JP2004007616A5/ja
Application granted granted Critical
Publication of JP4459548B2 publication Critical patent/JP4459548B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H03F1/302—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in bipolar transistor amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
  • Bipolar Integrated Circuits (AREA)
JP2003119673A 2002-04-30 2003-04-24 Ｈｂｔリニアライザー・パワーブースター Expired - Fee Related JP4459548B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/136,926 US6750721B2 (en) 2002-04-30 2002-04-30 HBT linearizer and power booster

Publications (3)

Publication Number Publication Date
JP2004007616A JP2004007616A (ja) 2004-01-08
JP2004007616A5 JP2004007616A5 (enExample) 2006-04-20
JP4459548B2 true JP4459548B2 (ja) 2010-04-28

Family

ID=29215684

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003119673A Expired - Fee Related JP4459548B2 (ja) 2002-04-30 2003-04-24 Ｈｂｔリニアライザー・パワーブースター

Country Status (4)

Country Link
US (1) US6750721B2 (enExample)
EP (1) EP1359665B1 (enExample)
JP (1) JP4459548B2 (enExample)
DE (1) DE60325799D1 (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3600115B2 (ja) * 2000-04-05 2004-12-08 株式会社東芝 高周波回路及び通信システム
US6653902B1 (en) * 2002-09-03 2003-11-25 Triquint Semiconductor, Inc. Amplifier power control circuit
JP2004194063A (ja) * 2002-12-12 2004-07-08 Renesas Technology Corp 高周波電力増幅器およびそれを用いた通信装置
US7026876B1 (en) * 2003-02-21 2006-04-11 Dynalinear Technologies, Inc. High linearity smart HBT power amplifiers for CDMA/WCDMA application
US7064614B2 (en) * 2004-07-09 2006-06-20 Xindium Technologies, Inc. Current mirror biasing circuit with power control for HBT power amplifiers
JP2006325096A (ja) * 2005-05-20 2006-11-30 Matsushita Electric Ind Co Ltd 高周波電力増幅器
US7508249B2 (en) 2005-07-27 2009-03-24 Analog Devices, Inc. Distributed transistor structure for high linearity active CATV power splitter
JP4332570B2 (ja) * 2006-09-29 2009-09-16 シャープ株式会社 バイアス回路および電力増幅器
US8072271B1 (en) 2008-10-14 2011-12-06 Rf Micro Devices, Inc. Termination circuit based linear high efficiency radio frequency amplifier
US8319558B1 (en) 2008-10-14 2012-11-27 Rf Micro Devices, Inc. Bias-based linear high efficiency radio frequency amplifier
KR101373658B1 (ko) * 2009-12-04 2014-03-13 한국전자통신연구원 전력 증폭 장치
US8400223B2 (en) * 2011-02-07 2013-03-19 Ubidyne, Inc. Amplifier arrangement
US10158327B2 (en) * 2016-10-28 2018-12-18 Qualcomm Incorporated Low impedance adaptive bias scheme for power amplifier
CN108462474B (zh) * 2018-05-21 2024-10-29 浙江臻镭科技股份有限公司 一种新型的基于hbt的基极镇流电路
JP2021069089A (ja) 2019-10-28 2021-04-30 株式会社村田製作所 電力増幅モジュール及び電力増幅方法
JP7239023B2 (ja) * 2020-01-07 2023-03-14 三菱電機株式会社 高周波半導体装置
CN112543004B (zh) * 2020-12-04 2024-10-22 广东工业大学 一种线性化偏置电路及射频功率放大器

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5670912A (en) * 1996-01-31 1997-09-23 Motorola, Inc. Variable supply biasing method and apparatus for an amplifier
US6175276B1 (en) * 1998-03-16 2001-01-16 National Semiconductor Corporation Indirect emitter-coupling preamplifier for magneto-resistive heads with single-ended feedback
JP2001160614A (ja) * 1999-12-03 2001-06-12 Hitachi Ltd 半導体集積回路
JP3641184B2 (ja) * 2000-03-28 2005-04-20 株式会社東芝 バイポーラトランジスタを用いた高周波電力増幅器
US6333677B1 (en) * 2000-10-10 2001-12-25 Rf Micro Devices, Inc. Linear power amplifier bias circuit
US6529079B2 (en) * 2000-12-29 2003-03-04 Triquint Semiconductor, Inc. RF power amplifier with distributed bias circuit
US6515546B2 (en) * 2001-06-06 2003-02-04 Anadigics, Inc. Bias circuit for use with low-voltage power supply

Also Published As

Publication number Publication date
US6750721B2 (en) 2004-06-15
EP1359665B1 (en) 2009-01-14
DE60325799D1 (de) 2009-03-05
US20030201832A1 (en) 2003-10-30
EP1359665A2 (en) 2003-11-05
JP2004007616A (ja) 2004-01-08
EP1359665A3 (en) 2004-05-12

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