DE60325799D1 - Vorverzerrungslinearisierer mit Heteroübergangsbipolartransistoren und Leistungsverstärker - Google Patents

Vorverzerrungslinearisierer mit Heteroübergangsbipolartransistoren und Leistungsverstärker

Info

Publication number
DE60325799D1
DE60325799D1 DE60325799T DE60325799T DE60325799D1 DE 60325799 D1 DE60325799 D1 DE 60325799D1 DE 60325799 T DE60325799 T DE 60325799T DE 60325799 T DE60325799 T DE 60325799T DE 60325799 D1 DE60325799 D1 DE 60325799D1
Authority
DE
Germany
Prior art keywords
power amplifiers
bipolar transistors
heterojunction bipolar
predistortion linearizer
linearizer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE60325799T
Other languages
German (de)
English (en)
Inventor
Howard Patterson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP USA Inc
Original Assignee
Freescale Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Freescale Semiconductor Inc filed Critical Freescale Semiconductor Inc
Application granted granted Critical
Publication of DE60325799D1 publication Critical patent/DE60325799D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H03F1/302—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in bipolar transistor amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
  • Bipolar Integrated Circuits (AREA)
DE60325799T 2002-04-30 2003-04-28 Vorverzerrungslinearisierer mit Heteroübergangsbipolartransistoren und Leistungsverstärker Expired - Fee Related DE60325799D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/136,926 US6750721B2 (en) 2002-04-30 2002-04-30 HBT linearizer and power booster

Publications (1)

Publication Number Publication Date
DE60325799D1 true DE60325799D1 (de) 2009-03-05

Family

ID=29215684

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60325799T Expired - Fee Related DE60325799D1 (de) 2002-04-30 2003-04-28 Vorverzerrungslinearisierer mit Heteroübergangsbipolartransistoren und Leistungsverstärker

Country Status (4)

Country Link
US (1) US6750721B2 (enExample)
EP (1) EP1359665B1 (enExample)
JP (1) JP4459548B2 (enExample)
DE (1) DE60325799D1 (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3600115B2 (ja) * 2000-04-05 2004-12-08 株式会社東芝 高周波回路及び通信システム
US6653902B1 (en) * 2002-09-03 2003-11-25 Triquint Semiconductor, Inc. Amplifier power control circuit
JP2004194063A (ja) * 2002-12-12 2004-07-08 Renesas Technology Corp 高周波電力増幅器およびそれを用いた通信装置
US7026876B1 (en) * 2003-02-21 2006-04-11 Dynalinear Technologies, Inc. High linearity smart HBT power amplifiers for CDMA/WCDMA application
US7064614B2 (en) * 2004-07-09 2006-06-20 Xindium Technologies, Inc. Current mirror biasing circuit with power control for HBT power amplifiers
JP2006325096A (ja) * 2005-05-20 2006-11-30 Matsushita Electric Ind Co Ltd 高周波電力増幅器
WO2007016045A1 (en) * 2005-07-27 2007-02-08 Analog Devices, Inc. Distributed transistor structure for high linearity active catv power splitter
JP4332570B2 (ja) * 2006-09-29 2009-09-16 シャープ株式会社 バイアス回路および電力増幅器
US8319558B1 (en) 2008-10-14 2012-11-27 Rf Micro Devices, Inc. Bias-based linear high efficiency radio frequency amplifier
US8072271B1 (en) 2008-10-14 2011-12-06 Rf Micro Devices, Inc. Termination circuit based linear high efficiency radio frequency amplifier
KR101373658B1 (ko) * 2009-12-04 2014-03-13 한국전자통신연구원 전력 증폭 장치
US8400223B2 (en) * 2011-02-07 2013-03-19 Ubidyne, Inc. Amplifier arrangement
US10158327B2 (en) * 2016-10-28 2018-12-18 Qualcomm Incorporated Low impedance adaptive bias scheme for power amplifier
CN108462474B (zh) * 2018-05-21 2024-10-29 浙江臻镭科技股份有限公司 一种新型的基于hbt的基极镇流电路
JP2021069089A (ja) 2019-10-28 2021-04-30 株式会社村田製作所 電力増幅モジュール及び電力増幅方法
US11855601B2 (en) * 2020-01-07 2023-12-26 Mitsubishi Electric Corporation High-frequency semiconductor device
CN112543004B (zh) * 2020-12-04 2024-10-22 广东工业大学 一种线性化偏置电路及射频功率放大器

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5670912A (en) * 1996-01-31 1997-09-23 Motorola, Inc. Variable supply biasing method and apparatus for an amplifier
US6175276B1 (en) * 1998-03-16 2001-01-16 National Semiconductor Corporation Indirect emitter-coupling preamplifier for magneto-resistive heads with single-ended feedback
JP2001160614A (ja) * 1999-12-03 2001-06-12 Hitachi Ltd 半導体集積回路
JP3641184B2 (ja) * 2000-03-28 2005-04-20 株式会社東芝 バイポーラトランジスタを用いた高周波電力増幅器
US6333677B1 (en) * 2000-10-10 2001-12-25 Rf Micro Devices, Inc. Linear power amplifier bias circuit
US6529079B2 (en) * 2000-12-29 2003-03-04 Triquint Semiconductor, Inc. RF power amplifier with distributed bias circuit
US6515546B2 (en) * 2001-06-06 2003-02-04 Anadigics, Inc. Bias circuit for use with low-voltage power supply

Also Published As

Publication number Publication date
EP1359665B1 (en) 2009-01-14
US20030201832A1 (en) 2003-10-30
EP1359665A3 (en) 2004-05-12
JP4459548B2 (ja) 2010-04-28
JP2004007616A (ja) 2004-01-08
EP1359665A2 (en) 2003-11-05
US6750721B2 (en) 2004-06-15

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Legal Events

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8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee