JP4457417B2 - 窒化物半導体レーザ素子 - Google Patents

窒化物半導体レーザ素子 Download PDF

Info

Publication number
JP4457417B2
JP4457417B2 JP26775998A JP26775998A JP4457417B2 JP 4457417 B2 JP4457417 B2 JP 4457417B2 JP 26775998 A JP26775998 A JP 26775998A JP 26775998 A JP26775998 A JP 26775998A JP 4457417 B2 JP4457417 B2 JP 4457417B2
Authority
JP
Japan
Prior art keywords
nitride semiconductor
light
layer
electrode
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP26775998A
Other languages
English (en)
Japanese (ja)
Other versions
JP2000101193A (ja
JP2000101193A5 (enExample
Inventor
義弘 川野
修二 中村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nichia Corp
Original Assignee
Nichia Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nichia Corp filed Critical Nichia Corp
Priority to JP26775998A priority Critical patent/JP4457417B2/ja
Publication of JP2000101193A publication Critical patent/JP2000101193A/ja
Publication of JP2000101193A5 publication Critical patent/JP2000101193A5/ja
Application granted granted Critical
Publication of JP4457417B2 publication Critical patent/JP4457417B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Landscapes

  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
JP26775998A 1998-09-22 1998-09-22 窒化物半導体レーザ素子 Expired - Fee Related JP4457417B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP26775998A JP4457417B2 (ja) 1998-09-22 1998-09-22 窒化物半導体レーザ素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP26775998A JP4457417B2 (ja) 1998-09-22 1998-09-22 窒化物半導体レーザ素子

Publications (3)

Publication Number Publication Date
JP2000101193A JP2000101193A (ja) 2000-04-07
JP2000101193A5 JP2000101193A5 (enExample) 2005-11-10
JP4457417B2 true JP4457417B2 (ja) 2010-04-28

Family

ID=17449202

Family Applications (1)

Application Number Title Priority Date Filing Date
JP26775998A Expired - Fee Related JP4457417B2 (ja) 1998-09-22 1998-09-22 窒化物半導体レーザ素子

Country Status (1)

Country Link
JP (1) JP4457417B2 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6562644B2 (en) * 2000-08-08 2003-05-13 Matsushita Electric Industrial Co., Ltd. Semiconductor substrate, method of manufacturing the semiconductor substrate, semiconductor device and pattern forming method
JP3849758B2 (ja) 2001-04-12 2006-11-22 ソニー株式会社 半導体レーザ素子
JP2005072130A (ja) * 2003-08-21 2005-03-17 Mitsubishi Electric Corp 半導体レーザ装置
JP4665394B2 (ja) * 2003-12-09 2011-04-06 日亜化学工業株式会社 窒化物半導体レーザ素子
JP4910492B2 (ja) * 2006-06-15 2012-04-04 豊田合成株式会社 窒化物半導体ウエハの分割方法
KR101262226B1 (ko) 2006-10-31 2013-05-15 삼성전자주식회사 반도체 발광 소자의 제조방법
JP5304428B2 (ja) * 2009-05-15 2013-10-02 ソニー株式会社 半導体レーザ
US8149654B2 (en) 2010-03-23 2012-04-03 Tdk Corporation Wave guide that attenuates evanescent light of higher order TM mode
DE102022104418A1 (de) * 2022-02-24 2023-08-24 Ams-Osram International Gmbh Kantenemittierende halbleiterlaserdiode

Also Published As

Publication number Publication date
JP2000101193A (ja) 2000-04-07

Similar Documents

Publication Publication Date Title
JP4325232B2 (ja) 窒化物半導体素子
US7796663B2 (en) Semiconductor laser device
JP4830315B2 (ja) 半導体レーザ素子
JP3346735B2 (ja) 窒化物半導体発光素子及びその製造方法
JP3031415B1 (ja) 窒化物半導体レーザ素子
JP3647236B2 (ja) 窒化物半導体レーザ素子
WO2005006506A1 (ja) 窒化物半導体レーザ素子及びそれを用いたレーザー装置
JP4529372B2 (ja) 半導体レーザ素子
JP3375042B2 (ja) 窒化物半導体レーザ素子
JP4457417B2 (ja) 窒化物半導体レーザ素子
JP4043087B2 (ja) 窒化物半導体素子の製造方法及び窒化物半導体素子
JP2004281432A (ja) 窒化物半導体素子及びその製造方法
JP3794530B2 (ja) 窒化物半導体レーザ素子
JP5098135B2 (ja) 半導体レーザ素子
JP4100013B2 (ja) 窒化物半導体レーザ素子及びその製造方法
JP2000058972A (ja) 窒化物半導体レーザ素子
JP2004253545A (ja) 窒化物半導体素子の製造方法及び窒化物半導体素子
JP3264163B2 (ja) 窒化物半導体レーザ素子
JP3498577B2 (ja) 窒化物半導体レーザ素子
JP2005101536A (ja) 窒化物半導体レーザ素子
JP2002324947A (ja) 半導体レーザ素子
JP4045792B2 (ja) 窒化物半導体レーザ素子
JP5010096B2 (ja) 窒化物半導体レーザ素子及びそれを用いたｌｄ装置
JP2002270967A (ja) 半導体レーザ素子
JP2004111997A (ja) 半導体レーザ素子

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20050920

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20050920

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20081120

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20081202

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20090130

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20100119

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20100201

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130219

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130219

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130219

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140219

Year of fee payment: 4

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees