JP2000101193A5 - - Google Patents
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- Publication number
- JP2000101193A5 JP2000101193A5 JP1998267759A JP26775998A JP2000101193A5 JP 2000101193 A5 JP2000101193 A5 JP 2000101193A5 JP 1998267759 A JP1998267759 A JP 1998267759A JP 26775998 A JP26775998 A JP 26775998A JP 2000101193 A5 JP2000101193 A5 JP 2000101193A5
- Authority
- JP
- Japan
- Prior art keywords
- nitride semiconductor
- laser device
- semiconductor laser
- electrode
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 description 67
- 150000004767 nitrides Chemical class 0.000 description 63
- 239000000758 substrate Substances 0.000 description 15
- 229910045601 alloy Inorganic materials 0.000 description 8
- 239000000956 alloy Substances 0.000 description 8
- 229910052804 chromium Inorganic materials 0.000 description 6
- 229910052737 gold Inorganic materials 0.000 description 6
- 230000010355 oscillation Effects 0.000 description 6
- 229910052719 titanium Inorganic materials 0.000 description 6
- 229910052721 tungsten Inorganic materials 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 229910052715 tantalum Inorganic materials 0.000 description 4
- 230000031700 light absorption Effects 0.000 description 3
- 239000012535 impurity Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26775998A JP4457417B2 (ja) | 1998-09-22 | 1998-09-22 | 窒化物半導体レーザ素子 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26775998A JP4457417B2 (ja) | 1998-09-22 | 1998-09-22 | 窒化物半導体レーザ素子 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2000101193A JP2000101193A (ja) | 2000-04-07 |
| JP2000101193A5 true JP2000101193A5 (enExample) | 2005-11-10 |
| JP4457417B2 JP4457417B2 (ja) | 2010-04-28 |
Family
ID=17449202
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP26775998A Expired - Fee Related JP4457417B2 (ja) | 1998-09-22 | 1998-09-22 | 窒化物半導体レーザ素子 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4457417B2 (enExample) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6562644B2 (en) * | 2000-08-08 | 2003-05-13 | Matsushita Electric Industrial Co., Ltd. | Semiconductor substrate, method of manufacturing the semiconductor substrate, semiconductor device and pattern forming method |
| JP3849758B2 (ja) | 2001-04-12 | 2006-11-22 | ソニー株式会社 | 半導体レーザ素子 |
| JP2005072130A (ja) * | 2003-08-21 | 2005-03-17 | Mitsubishi Electric Corp | 半導体レーザ装置 |
| JP4665394B2 (ja) * | 2003-12-09 | 2011-04-06 | 日亜化学工業株式会社 | 窒化物半導体レーザ素子 |
| JP4910492B2 (ja) * | 2006-06-15 | 2012-04-04 | 豊田合成株式会社 | 窒化物半導体ウエハの分割方法 |
| KR101262226B1 (ko) | 2006-10-31 | 2013-05-15 | 삼성전자주식회사 | 반도체 발광 소자의 제조방법 |
| JP5304428B2 (ja) * | 2009-05-15 | 2013-10-02 | ソニー株式会社 | 半導体レーザ |
| US8149654B2 (en) | 2010-03-23 | 2012-04-03 | Tdk Corporation | Wave guide that attenuates evanescent light of higher order TM mode |
| DE102022104418A1 (de) * | 2022-02-24 | 2023-08-24 | Ams-Osram International Gmbh | Kantenemittierende halbleiterlaserdiode |
-
1998
- 1998-09-22 JP JP26775998A patent/JP4457417B2/ja not_active Expired - Fee Related
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