JP4451683B2 - 半導体発光素子、その製造方法および発光ダイオード - Google Patents

半導体発光素子、その製造方法および発光ダイオード Download PDF

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Publication number
JP4451683B2
JP4451683B2 JP2004065748A JP2004065748A JP4451683B2 JP 4451683 B2 JP4451683 B2 JP 4451683B2 JP 2004065748 A JP2004065748 A JP 2004065748A JP 2004065748 A JP2004065748 A JP 2004065748A JP 4451683 B2 JP4451683 B2 JP 4451683B2
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JP
Japan
Prior art keywords
light emitting
semiconductor
layer
emitting element
transparent substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2004065748A
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English (en)
Japanese (ja)
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JP2004297056A (ja
JP2004297056A5 (enExample
Inventor
良一 竹内
亙 鍋倉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Resonac Holdings Corp
Original Assignee
Showa Denko KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Showa Denko KK filed Critical Showa Denko KK
Priority to JP2004065748A priority Critical patent/JP4451683B2/ja
Publication of JP2004297056A publication Critical patent/JP2004297056A/ja
Publication of JP2004297056A5 publication Critical patent/JP2004297056A5/ja
Application granted granted Critical
Publication of JP4451683B2 publication Critical patent/JP4451683B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation

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  • Led Devices (AREA)
JP2004065748A 2003-03-13 2004-03-09 半導体発光素子、その製造方法および発光ダイオード Expired - Fee Related JP4451683B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004065748A JP4451683B2 (ja) 2003-03-13 2004-03-09 半導体発光素子、その製造方法および発光ダイオード

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003067428 2003-03-13
JP2004065748A JP4451683B2 (ja) 2003-03-13 2004-03-09 半導体発光素子、その製造方法および発光ダイオード

Publications (3)

Publication Number Publication Date
JP2004297056A JP2004297056A (ja) 2004-10-21
JP2004297056A5 JP2004297056A5 (enExample) 2007-04-26
JP4451683B2 true JP4451683B2 (ja) 2010-04-14

Family

ID=33421604

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004065748A Expired - Fee Related JP4451683B2 (ja) 2003-03-13 2004-03-09 半導体発光素子、その製造方法および発光ダイオード

Country Status (1)

Country Link
JP (1) JP4451683B2 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4176703B2 (ja) 2004-11-25 2008-11-05 松下電器産業株式会社 半導体発光装置、照明装置、携帯通信機器、カメラ、及び製造方法
JP4830356B2 (ja) * 2005-06-08 2011-12-07 ソニー株式会社 半導体発光素子及び半導体発光装置
US7915619B2 (en) 2005-12-22 2011-03-29 Showa Denko K.K. Light-emitting diode and method for fabrication thereof
JP4825003B2 (ja) * 2005-12-28 2011-11-30 ローム株式会社 窒化物半導体発光素子及び窒化物半導体発光素子製造方法
WO2009015386A1 (en) * 2007-07-26 2009-01-29 The Regents Of The University Of California Light emitting diodes with a p-type surface
JP5505864B2 (ja) * 2010-03-30 2014-05-28 日本電気硝子株式会社 半導体発光素子デバイスの製造方法

Also Published As

Publication number Publication date
JP2004297056A (ja) 2004-10-21

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