JP2004297056A5 - - Google Patents

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Publication number
JP2004297056A5
JP2004297056A5 JP2004065748A JP2004065748A JP2004297056A5 JP 2004297056 A5 JP2004297056 A5 JP 2004297056A5 JP 2004065748 A JP2004065748 A JP 2004065748A JP 2004065748 A JP2004065748 A JP 2004065748A JP 2004297056 A5 JP2004297056 A5 JP 2004297056A5
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JP
Japan
Prior art keywords
semiconductor
emitting device
semiconductor light
layer
light emitting
Prior art date
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Granted
Application number
JP2004065748A
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English (en)
Japanese (ja)
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JP4451683B2 (ja
JP2004297056A (ja
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Priority to JP2004065748A priority Critical patent/JP4451683B2/ja
Priority claimed from JP2004065748A external-priority patent/JP4451683B2/ja
Publication of JP2004297056A publication Critical patent/JP2004297056A/ja
Publication of JP2004297056A5 publication Critical patent/JP2004297056A5/ja
Application granted granted Critical
Publication of JP4451683B2 publication Critical patent/JP4451683B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2004065748A 2003-03-13 2004-03-09 半導体発光素子、その製造方法および発光ダイオード Expired - Fee Related JP4451683B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004065748A JP4451683B2 (ja) 2003-03-13 2004-03-09 半導体発光素子、その製造方法および発光ダイオード

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003067428 2003-03-13
JP2004065748A JP4451683B2 (ja) 2003-03-13 2004-03-09 半導体発光素子、その製造方法および発光ダイオード

Publications (3)

Publication Number Publication Date
JP2004297056A JP2004297056A (ja) 2004-10-21
JP2004297056A5 true JP2004297056A5 (enExample) 2007-04-26
JP4451683B2 JP4451683B2 (ja) 2010-04-14

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ID=33421604

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004065748A Expired - Fee Related JP4451683B2 (ja) 2003-03-13 2004-03-09 半導体発光素子、その製造方法および発光ダイオード

Country Status (1)

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JP (1) JP4451683B2 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4176703B2 (ja) 2004-11-25 2008-11-05 松下電器産業株式会社 半導体発光装置、照明装置、携帯通信機器、カメラ、及び製造方法
JP4830356B2 (ja) * 2005-06-08 2011-12-07 ソニー株式会社 半導体発光素子及び半導体発光装置
US7915619B2 (en) 2005-12-22 2011-03-29 Showa Denko K.K. Light-emitting diode and method for fabrication thereof
JP4825003B2 (ja) * 2005-12-28 2011-11-30 ローム株式会社 窒化物半導体発光素子及び窒化物半導体発光素子製造方法
WO2009015386A1 (en) * 2007-07-26 2009-01-29 The Regents Of The University Of California Light emitting diodes with a p-type surface
JP5505864B2 (ja) * 2010-03-30 2014-05-28 日本電気硝子株式会社 半導体発光素子デバイスの製造方法

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