JP4451662B2 - 改良型圧力容器 - Google Patents

改良型圧力容器 Download PDF

Info

Publication number
JP4451662B2
JP4451662B2 JP2003563702A JP2003563702A JP4451662B2 JP 4451662 B2 JP4451662 B2 JP 4451662B2 JP 2003563702 A JP2003563702 A JP 2003563702A JP 2003563702 A JP2003563702 A JP 2003563702A JP 4451662 B2 JP4451662 B2 JP 4451662B2
Authority
JP
Japan
Prior art keywords
capsule
pressure
transmission medium
supercritical fluid
pressure transmission
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2003563702A
Other languages
English (en)
Japanese (ja)
Other versions
JP2005515884A5 (enExample
JP2005515884A (ja
Inventor
デヴリン，マーク・フィリップ
ナラング，クリスティ・ジーン
ギディングズ，ロバート・アーサー
レオネリ，ロバート・ビンセント，ジュニア
ドール，スティーブン・リー
Original Assignee
モーメンティブ・パフォーマンス・マテリアルズ・インク
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by モーメンティブ・パフォーマンス・マテリアルズ・インク filed Critical モーメンティブ・パフォーマンス・マテリアルズ・インク
Publication of JP2005515884A publication Critical patent/JP2005515884A/ja
Publication of JP2005515884A5 publication Critical patent/JP2005515884A5/ja
Application granted granted Critical
Publication of JP4451662B2 publication Critical patent/JP4451662B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
    • B01J3/04—Pressure vessels, e.g. autoclaves
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/0053—Details of the reactor
    • B01J19/006—Baffles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/0006—Controlling or regulating processes
    • B01J19/0013—Controlling the temperature of the process
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/0053—Details of the reactor
    • B01J19/0073—Sealings
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/02—Apparatus characterised by being constructed of material selected for its chemically-resistant properties
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
    • B01J3/06—Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
    • B01J3/06—Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies
    • B01J3/062—Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies characterised by the composition of the materials to be processed
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2203/00—Processes utilising sub- or super atmospheric pressure
    • B01J2203/06—High pressure synthesis
    • B01J2203/065—Composition of the material produced
    • B01J2203/067—Aluminium nitrides
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/00049—Controlling or regulating processes
    • B01J2219/00051—Controlling the temperature
    • B01J2219/00054—Controlling or regulating the heat exchange system
    • B01J2219/00056—Controlling or regulating the heat exchange system involving measured parameters
    • B01J2219/00058—Temperature measurement
    • B01J2219/00063—Temperature measurement of the reactants
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/00049—Controlling or regulating processes
    • B01J2219/00051—Controlling the temperature
    • B01J2219/00074—Controlling the temperature by indirect heating or cooling employing heat exchange fluids
    • B01J2219/00087—Controlling the temperature by indirect heating or cooling employing heat exchange fluids with heat exchange elements outside the reactor
    • B01J2219/00094—Jackets
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/00049—Controlling or regulating processes
    • B01J2219/00051—Controlling the temperature
    • B01J2219/00132—Controlling the temperature using electric heating or cooling elements
    • B01J2219/00135—Electric resistance heaters
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/02—Apparatus characterised by their chemically-resistant properties
    • B01J2219/0204—Apparatus characterised by their chemically-resistant properties comprising coatings on the surfaces in direct contact with the reactive components
    • B01J2219/0236—Metal based
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/02—Apparatus characterised by their chemically-resistant properties
    • B01J2219/025—Apparatus characterised by their chemically-resistant properties characterised by the construction materials of the reactor vessel proper
    • B01J2219/0277—Metal based
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/19—Details relating to the geometry of the reactor
    • B01J2219/194—Details relating to the geometry of the reactor round
    • B01J2219/1941—Details relating to the geometry of the reactor round circular or disk-shaped
    • B01J2219/1943—Details relating to the geometry of the reactor round circular or disk-shaped cylindrical

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Pressure Vessels And Lids Thereof (AREA)
  • Press Drives And Press Lines (AREA)
  • Supply Devices, Intensifiers, Converters, And Telemotors (AREA)
  • Gasket Seals (AREA)
  • General Preparation And Processing Of Foods (AREA)
JP2003563702A 2002-01-31 2002-11-22 改良型圧力容器 Expired - Fee Related JP4451662B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/683,658 US20030140845A1 (en) 2002-01-31 2002-01-31 Pressure vessel
PCT/US2002/037755 WO2003064021A1 (en) 2002-01-31 2002-11-22 Improved pressure vessel

Publications (3)

Publication Number Publication Date
JP2005515884A JP2005515884A (ja) 2005-06-02
JP2005515884A5 JP2005515884A5 (enExample) 2006-01-12
JP4451662B2 true JP4451662B2 (ja) 2010-04-14

Family

ID=27613762

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003563702A Expired - Fee Related JP4451662B2 (ja) 2002-01-31 2002-11-22 改良型圧力容器

Country Status (9)

Country Link
US (1) US20030140845A1 (enExample)
EP (1) EP1476249B1 (enExample)
JP (1) JP4451662B2 (enExample)
KR (1) KR20040078682A (enExample)
CN (1) CN100358621C (enExample)
AT (1) ATE337850T1 (enExample)
DE (1) DE60214436T2 (enExample)
PL (1) PL371733A1 (enExample)
WO (1) WO2003064021A1 (enExample)

Families Citing this family (78)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7125453B2 (en) * 2002-01-31 2006-10-24 General Electric Company High temperature high pressure capsule for processing materials in supercritical fluids
US7063741B2 (en) * 2002-03-27 2006-06-20 General Electric Company High pressure high temperature growth of crystalline group III metal nitrides
US7101433B2 (en) * 2002-12-18 2006-09-05 General Electric Company High pressure/high temperature apparatus with improved temperature control for crystal growth
US20050131126A1 (en) * 2003-02-27 2005-06-16 Kumin Yang Production of polymer nanocomposites using supercritical fluids
US20050257738A1 (en) * 2004-05-21 2005-11-24 Semiconductor Energy Laboratory Co., Ltd. Manufacturing apparatus of semiconductor device and pattern-forming method
JP4276627B2 (ja) 2005-01-12 2009-06-10 ソルボサーマル結晶成長技術研究組合 単結晶育成用圧力容器およびその製造方法
US7704324B2 (en) * 2005-01-25 2010-04-27 General Electric Company Apparatus for processing materials in supercritical fluids and methods thereof
JP4925463B2 (ja) * 2005-02-16 2012-04-25 日本碍子株式会社 六方晶窒化ホウ素単結晶の製造方法
US7316746B2 (en) * 2005-03-18 2008-01-08 General Electric Company Crystals for a semiconductor radiation detector and method for making the crystals
US7887631B2 (en) * 2005-06-24 2011-02-15 The Gemesis Corporation System and high pressure, high temperature apparatus for producing synthetic diamonds
FR2891162B1 (fr) * 2005-09-28 2008-05-09 Commissariat Energie Atomique Reacteur et procede pour le traitement d'une matiere dans un milieu reactionnel fluide
US7942970B2 (en) 2005-12-20 2011-05-17 Momentive Performance Materials Inc. Apparatus for making crystalline composition
WO2008045337A1 (en) * 2006-10-08 2008-04-17 Momentive Performance Materials Inc. Method for forming nitride crystals
KR100836006B1 (ko) * 2007-03-30 2008-06-09 한국기계연구원 초임계수 산화장치 및 이의 방식방법
US8097081B2 (en) 2008-06-05 2012-01-17 Soraa, Inc. High pressure apparatus and method for nitride crystal growth
US8871024B2 (en) 2008-06-05 2014-10-28 Soraa, Inc. High pressure apparatus and method for nitride crystal growth
JP5536046B2 (ja) * 2008-06-05 2014-07-02 ソーラ インコーポレーション 窒化物結晶成長用の高圧装置及び結晶成長方法
US9157167B1 (en) 2008-06-05 2015-10-13 Soraa, Inc. High pressure apparatus and method for nitride crystal growth
US8303710B2 (en) * 2008-06-18 2012-11-06 Soraa, Inc. High pressure apparatus and method for nitride crystal growth
WO2011044554A1 (en) 2009-10-09 2011-04-14 Soraa, Inc. Method for synthesis of high quality large area bulk gallium based crystals
WO2010005914A1 (en) * 2008-07-07 2010-01-14 Soraa, Inc. High quality large area bulk non-polar or semipolar gallium based substrates and methods
US9404197B2 (en) 2008-07-07 2016-08-02 Soraa, Inc. Large area, low-defect gallium-containing nitride crystals, method of making, and method of use
US8284810B1 (en) 2008-08-04 2012-10-09 Soraa, Inc. Solid state laser device using a selected crystal orientation in non-polar or semi-polar GaN containing materials and methods
JP2011530194A (ja) * 2008-08-04 2011-12-15 ソラア インコーポレーテッド 物質および蛍光体を含んだ非分極性あるいは半極性のガリウムを用いた白色灯デバイス
US8430958B2 (en) 2008-08-07 2013-04-30 Soraa, Inc. Apparatus and method for seed crystal utilization in large-scale manufacturing of gallium nitride
US8979999B2 (en) * 2008-08-07 2015-03-17 Soraa, Inc. Process for large-scale ammonothermal manufacturing of gallium nitride boules
US8021481B2 (en) 2008-08-07 2011-09-20 Soraa, Inc. Process and apparatus for large-scale manufacturing of bulk monocrystalline gallium-containing nitride
US8323405B2 (en) * 2008-08-07 2012-12-04 Soraa, Inc. Process and apparatus for growing a crystalline gallium-containing nitride using an azide mineralizer
US10036099B2 (en) 2008-08-07 2018-07-31 Slt Technologies, Inc. Process for large-scale ammonothermal manufacturing of gallium nitride boules
US8148801B2 (en) 2008-08-25 2012-04-03 Soraa, Inc. Nitride crystal with removable surface layer and methods of manufacture
US7976630B2 (en) 2008-09-11 2011-07-12 Soraa, Inc. Large-area seed for ammonothermal growth of bulk gallium nitride and method of manufacture
US8354679B1 (en) 2008-10-02 2013-01-15 Soraa, Inc. Microcavity light emitting diode method of manufacture
US8455894B1 (en) 2008-10-17 2013-06-04 Soraa, Inc. Photonic-crystal light emitting diode and method of manufacture
US8461071B2 (en) 2008-12-12 2013-06-11 Soraa, Inc. Polycrystalline group III metal nitride with getter and method of making
US8987156B2 (en) 2008-12-12 2015-03-24 Soraa, Inc. Polycrystalline group III metal nitride with getter and method of making
US20100147210A1 (en) * 2008-12-12 2010-06-17 Soraa, Inc. high pressure apparatus and method for nitride crystal growth
US8878230B2 (en) 2010-03-11 2014-11-04 Soraa, Inc. Semi-insulating group III metal nitride and method of manufacture
US9543392B1 (en) 2008-12-12 2017-01-10 Soraa, Inc. Transparent group III metal nitride and method of manufacture
USRE47114E1 (en) 2008-12-12 2018-11-06 Slt Technologies, Inc. Polycrystalline group III metal nitride with getter and method of making
US9589792B2 (en) * 2012-11-26 2017-03-07 Soraa, Inc. High quality group-III metal nitride crystals, methods of making, and methods of use
US8299473B1 (en) 2009-04-07 2012-10-30 Soraa, Inc. Polarized white light devices using non-polar or semipolar gallium containing materials and transparent phosphors
US8306081B1 (en) 2009-05-27 2012-11-06 Soraa, Inc. High indium containing InGaN substrates for long wavelength optical devices
US9250044B1 (en) 2009-05-29 2016-02-02 Soraa Laser Diode, Inc. Gallium and nitrogen containing laser diode dazzling devices and methods of use
US9800017B1 (en) 2009-05-29 2017-10-24 Soraa Laser Diode, Inc. Laser device and method for a vehicle
US8509275B1 (en) 2009-05-29 2013-08-13 Soraa, Inc. Gallium nitride based laser dazzling device and method
US8435347B2 (en) * 2009-09-29 2013-05-07 Soraa, Inc. High pressure apparatus with stackable rings
US9564320B2 (en) 2010-06-18 2017-02-07 Soraa, Inc. Large area nitride crystal and method for making it
CN101889711B (zh) * 2010-06-25 2014-09-17 于亮 流体超高压加工设备
CN101905137B (zh) * 2010-07-26 2015-10-14 中国计量学院 石英管内外气压平衡反应装置
US8729559B2 (en) 2010-10-13 2014-05-20 Soraa, Inc. Method of making bulk InGaN substrates and devices thereon
US8786053B2 (en) 2011-01-24 2014-07-22 Soraa, Inc. Gallium-nitride-on-handle substrate materials and devices and method of manufacture
US8492185B1 (en) 2011-07-14 2013-07-23 Soraa, Inc. Large area nonpolar or semipolar gallium and nitrogen containing substrate and resulting devices
US9694158B2 (en) * 2011-10-21 2017-07-04 Ahmad Mohamad Slim Torque for incrementally advancing a catheter during right heart catheterization
US10029955B1 (en) 2011-10-24 2018-07-24 Slt Technologies, Inc. Capsule for high pressure, high temperature processing of materials and methods of use
US8482104B2 (en) 2012-01-09 2013-07-09 Soraa, Inc. Method for growth of indium-containing nitride films
DE112013001505T5 (de) * 2012-04-10 2015-03-19 The Regents Of The University Of California Apparat zur Verwendung zum Züchten von Gruppe lll-Nitrid-Kristallen unter Verwendung von Carbonfaser enthaltenden Materialien und damit gezüchtetes Gruppe lll-Nitrid
US10145026B2 (en) 2012-06-04 2018-12-04 Slt Technologies, Inc. Process for large-scale ammonothermal manufacturing of semipolar gallium nitride boules
US9275912B1 (en) 2012-08-30 2016-03-01 Soraa, Inc. Method for quantification of extended defects in gallium-containing nitride crystals
US9299555B1 (en) 2012-09-28 2016-03-29 Soraa, Inc. Ultrapure mineralizers and methods for nitride crystal growth
US20140117008A1 (en) * 2012-10-31 2014-05-01 Mikrowellen-Labor-Systeme Gmbh Pressure Vessel
US9650723B1 (en) 2013-04-11 2017-05-16 Soraa, Inc. Large area seed crystal for ammonothermal crystal growth and method of making
CN103752214B (zh) * 2014-01-10 2016-04-13 长园电子（东莞）有限公司 一种过氧化物硫化体系橡胶制件的制造设备及其制备方法
US11437774B2 (en) 2015-08-19 2022-09-06 Kyocera Sld Laser, Inc. High-luminous flux laser-based white light source
US10174438B2 (en) 2017-03-30 2019-01-08 Slt Technologies, Inc. Apparatus for high pressure reaction
CN107698012B (zh) * 2017-10-20 2024-02-13 吴丹丹 一种卧式自平衡超临界反应装置
DE102018001690B3 (de) * 2017-11-28 2019-05-23 Carl Freudenberg Kg Dichtungsanordnung
US11421843B2 (en) 2018-12-21 2022-08-23 Kyocera Sld Laser, Inc. Fiber-delivered laser-induced dynamic light system
US11239637B2 (en) 2018-12-21 2022-02-01 Kyocera Sld Laser, Inc. Fiber delivered laser induced white light system
US11466384B2 (en) 2019-01-08 2022-10-11 Slt Technologies, Inc. Method of forming a high quality group-III metal nitride boule or wafer using a patterned substrate
US12000552B2 (en) 2019-01-18 2024-06-04 Kyocera Sld Laser, Inc. Laser-based fiber-coupled white light system for a vehicle
US11884202B2 (en) 2019-01-18 2024-01-30 Kyocera Sld Laser, Inc. Laser-based fiber-coupled white light system
US12152742B2 (en) 2019-01-18 2024-11-26 Kyocera Sld Laser, Inc. Laser-based light guide-coupled wide-spectrum light system
US11721549B2 (en) 2020-02-11 2023-08-08 Slt Technologies, Inc. Large area group III nitride crystals and substrates, methods of making, and methods of use
JP2023513570A (ja) 2020-02-11 2023-03-31 エスエルティー テクノロジーズ インコーポレイテッド 改善されたｉｉｉ族窒化物基板、その製造方法、並びにその使用方法
US12091771B2 (en) 2020-02-11 2024-09-17 Slt Technologies, Inc. Large area group III nitride crystals and substrates, methods of making, and methods of use
JP7483669B2 (ja) 2020-11-02 2024-05-15 エスエルティー テクノロジーズ インコーポレイテッド 窒化物結晶成長のための超高純度鉱化剤及び改良された方法
CN114029003B (zh) * 2021-11-09 2022-07-26 中国科学院地球化学研究所 一种高钛、钒、铬和高含水的钙镁橄榄石单晶的制备方法
CN116040966A (zh) * 2023-01-17 2023-05-02 东华大学 一种利用热高压强处理的玻璃化学强化方法

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1879278A (en) * 1931-09-01 1932-09-27 Peters Cartridge Company Cartridge
US2544414A (en) * 1946-11-22 1951-03-06 Norton Co High-pressure apparatus
US2785058A (en) * 1952-04-28 1957-03-12 Bell Telephone Labor Inc Method of growing quartz crystals
US2947610A (en) * 1958-01-06 1960-08-02 Gen Electric Method of making diamonds
US2947609A (en) * 1958-01-06 1960-08-02 Gen Electric Diamond synthesis
US3107395A (en) * 1959-11-27 1963-10-22 Gen Electric High pressure high temperature apparatus
FR1275127A (fr) * 1960-11-04 1961-11-03 Perfectionnements apportés aux matrices destinées à fonctionner à des pressions élevées
US3030662A (en) * 1961-05-24 1962-04-24 Gen Electric Pressure distribution in reaction vessels
US3088170A (en) * 1961-08-02 1963-05-07 Gen Electric Two-terminal end cap for high pressure, high temperature reaction vessels
US3567643A (en) * 1964-02-18 1971-03-02 Union Carbide Corp Hydrothermal process for growing crystals having the structure of beryl in an acid halide medium
US3313004A (en) * 1965-06-14 1967-04-11 Fred W Vahldiek High pressure electrical resistance cell
US3473935A (en) * 1965-08-18 1969-10-21 Wayne D Wilson Synthesis of beryl
US3607014A (en) * 1968-12-09 1971-09-21 Dow Chemical Co Method for preparing aluminum nitride and metal fluoride single crystals
JPS6091062A (ja) * 1983-10-21 1985-05-22 Kobe Steel Ltd 高温高圧容器
US4891165A (en) * 1988-07-28 1990-01-02 Best Industries, Inc. Device and method for encapsulating radioactive materials
DE4413423A1 (de) * 1994-04-18 1995-10-19 Paar Anton Kg Vorrichtung zum Aufschluß von Substanzen
JP3810116B2 (ja) * 1996-02-05 2006-08-16 電気化学工業株式会社 超高圧高温発生装置及びｃＢＮの合成法
JPH105572A (ja) * 1996-06-27 1998-01-13 Sumitomo Electric Ind Ltd ダイヤモンド結晶の合成方法及び合成装置
GB2333521B (en) * 1997-06-11 2000-04-26 Hitachi Cable Nitride crystal growth method
US6270569B1 (en) * 1997-06-11 2001-08-07 Hitachi Cable Ltd. Method of fabricating nitride crystal, mixture, liquid phase growth method, nitride crystal, nitride crystal powders, and vapor phase growth method
US6177057B1 (en) * 1999-02-09 2001-01-23 The United States Of America As Represented By The Secretary Of The Navy Process for preparing bulk cubic gallium nitride
EP1333112A4 (en) * 2000-10-13 2004-05-19 Japan Science & Tech Corp CRYSTAL OF NITRIDE-CONTAINING METAL ELEMENT FROM GROUP III OR IV AND METHOD FOR THE PRODUCTION THEREOF
TWI230685B (en) * 2001-01-04 2005-04-11 Univ Nat Cheng Kung Method and apparatus for synthesizing aluminium nitride
US7125453B2 (en) * 2002-01-31 2006-10-24 General Electric Company High temperature high pressure capsule for processing materials in supercritical fluids

Also Published As

Publication number Publication date
PL371733A1 (en) 2005-06-27
KR20040078682A (ko) 2004-09-10
ATE337850T1 (de) 2006-09-15
JP2005515884A (ja) 2005-06-02
EP1476249B1 (en) 2006-08-30
DE60214436T2 (de) 2007-07-12
WO2003064021A1 (en) 2003-08-07
DE60214436D1 (de) 2006-10-12
EP1476249A1 (en) 2004-11-17
US20030140845A1 (en) 2003-07-31
CN1744942A (zh) 2006-03-08
CN100358621C (zh) 2008-01-02

Similar Documents

Publication Publication Date Title
JP4451662B2 (ja) 改良型圧力容器
CN101163540B (zh) 用于在超临界流体中处理材料的装置及其方法
CN100376317C (zh) 用于在超临界流体中处理材料的高温高压小盒
US7101433B2 (en) High pressure/high temperature apparatus with improved temperature control for crystal growth
Johannes et al. An interlaboratory comparison of piston-cylinder pressure calibration using the albite-breakdown reaction
JP2005515884A5 (enExample)
Boettcher et al. Low‐friction, anhydrous, low‐to high‐temperature furnace sample assembly for piston‐cylinder apparatus
US20030154913A1 (en) High pressure and high temperature apparatus
ZA200406505B (en) Improved pressure vessel.
US4103100A (en) Cell adapted for producing high temperatures and high pressures
JP7431455B2 (ja) 合成ダイヤモンドの製造装置および製造方法
Shatskiy et al. Pressless split-sphere apparatus equipped with scaled-up Kawai-cell for mineralogical studies at 10–20 GPa
WO2020240213A1 (en) Apparatus and methods for the manufacture of synthetic diamonds
US20230241568A1 (en) Apparatus and methods for the manufacture of synthetic diamonds and cubic boron nitride
US5057286A (en) Vessel for use in hydrothermal synthesis
ZA200505405B (en) High pressure apparatus for crystal growth
Kawai Equipment for Generating Pressures up to 800 Kilobars
SE201151C1 (enExample)
ZA200506989B (en) High temperature high pressure capsule for processing materials in supercritical fluids

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20051117

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20051117

RD12 Notification of acceptance of power of sub attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7432

Effective date: 20070223

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20071010

A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A711

Effective date: 20080213

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20081027

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20090121

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20090811

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20091008

A911 Transfer to examiner for re-examination before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20091218

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20100118

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20100128

R150 Certificate of patent or registration of utility model

Ref document number: 4451662

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130205

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140205

Year of fee payment: 4

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313113

S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313531

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313113

S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313531

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees