CN100358621C - 改进的压力容器 - Google Patents
改进的压力容器 Download PDFInfo
- Publication number
- CN100358621C CN100358621C CNB028285034A CN02828503A CN100358621C CN 100358621 C CN100358621 C CN 100358621C CN B028285034 A CNB028285034 A CN B028285034A CN 02828503 A CN02828503 A CN 02828503A CN 100358621 C CN100358621 C CN 100358621C
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- China
- Prior art keywords
- packing
- pressure
- pressure vessel
- sealing
- transmission medium
- Prior art date
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- Expired - Fee Related
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
- B01J3/04—Pressure vessels, e.g. autoclaves
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J19/0053—Details of the reactor
- B01J19/006—Baffles
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J19/0006—Controlling or regulating processes
- B01J19/0013—Controlling the temperature of the process
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J19/0053—Details of the reactor
- B01J19/0073—Sealings
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J19/02—Apparatus characterised by being constructed of material selected for its chemically-resistant properties
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
- B01J3/06—Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
- B01J3/06—Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies
- B01J3/062—Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies characterised by the composition of the materials to be processed
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2203/00—Processes utilising sub- or super atmospheric pressure
- B01J2203/06—High pressure synthesis
- B01J2203/065—Composition of the material produced
- B01J2203/067—Aluminium nitrides
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J2219/00049—Controlling or regulating processes
- B01J2219/00051—Controlling the temperature
- B01J2219/00054—Controlling or regulating the heat exchange system
- B01J2219/00056—Controlling or regulating the heat exchange system involving measured parameters
- B01J2219/00058—Temperature measurement
- B01J2219/00063—Temperature measurement of the reactants
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J2219/00049—Controlling or regulating processes
- B01J2219/00051—Controlling the temperature
- B01J2219/00074—Controlling the temperature by indirect heating or cooling employing heat exchange fluids
- B01J2219/00087—Controlling the temperature by indirect heating or cooling employing heat exchange fluids with heat exchange elements outside the reactor
- B01J2219/00094—Jackets
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J2219/00049—Controlling or regulating processes
- B01J2219/00051—Controlling the temperature
- B01J2219/00132—Controlling the temperature using electric heating or cooling elements
- B01J2219/00135—Electric resistance heaters
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J2219/02—Apparatus characterised by their chemically-resistant properties
- B01J2219/0204—Apparatus characterised by their chemically-resistant properties comprising coatings on the surfaces in direct contact with the reactive components
- B01J2219/0236—Metal based
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J2219/02—Apparatus characterised by their chemically-resistant properties
- B01J2219/025—Apparatus characterised by their chemically-resistant properties characterised by the construction materials of the reactor vessel proper
- B01J2219/0277—Metal based
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J2219/19—Details relating to the geometry of the reactor
- B01J2219/194—Details relating to the geometry of the reactor round
- B01J2219/1941—Details relating to the geometry of the reactor round circular or disk-shaped
- B01J2219/1943—Details relating to the geometry of the reactor round circular or disk-shaped cylindrical
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Crystallography & Structural Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Pressure Vessels And Lids Thereof (AREA)
- Press Drives And Press Lines (AREA)
- Gasket Seals (AREA)
- Supply Devices, Intensifiers, Converters, And Telemotors (AREA)
- General Preparation And Processing Of Foods (AREA)
Abstract
Description
Claims (49)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/683,658 | 2002-01-31 | ||
US09/683,658 US20030140845A1 (en) | 2002-01-31 | 2002-01-31 | Pressure vessel |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1744942A CN1744942A (zh) | 2006-03-08 |
CN100358621C true CN100358621C (zh) | 2008-01-02 |
Family
ID=27613762
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB028285034A Expired - Fee Related CN100358621C (zh) | 2002-01-31 | 2002-11-22 | 改进的压力容器 |
Country Status (9)
Country | Link |
---|---|
US (1) | US20030140845A1 (zh) |
EP (1) | EP1476249B1 (zh) |
JP (1) | JP4451662B2 (zh) |
KR (1) | KR20040078682A (zh) |
CN (1) | CN100358621C (zh) |
AT (1) | ATE337850T1 (zh) |
DE (1) | DE60214436T2 (zh) |
PL (1) | PL371733A1 (zh) |
WO (1) | WO2003064021A1 (zh) |
Families Citing this family (76)
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US7125453B2 (en) * | 2002-01-31 | 2006-10-24 | General Electric Company | High temperature high pressure capsule for processing materials in supercritical fluids |
US7063741B2 (en) * | 2002-03-27 | 2006-06-20 | General Electric Company | High pressure high temperature growth of crystalline group III metal nitrides |
US7101433B2 (en) * | 2002-12-18 | 2006-09-05 | General Electric Company | High pressure/high temperature apparatus with improved temperature control for crystal growth |
US20050131126A1 (en) * | 2003-02-27 | 2005-06-16 | Kumin Yang | Production of polymer nanocomposites using supercritical fluids |
US20050257738A1 (en) * | 2004-05-21 | 2005-11-24 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing apparatus of semiconductor device and pattern-forming method |
JP4276627B2 (ja) * | 2005-01-12 | 2009-06-10 | ソルボサーマル結晶成長技術研究組合 | 単結晶育成用圧力容器およびその製造方法 |
US7704324B2 (en) * | 2005-01-25 | 2010-04-27 | General Electric Company | Apparatus for processing materials in supercritical fluids and methods thereof |
JP4925463B2 (ja) * | 2005-02-16 | 2012-04-25 | 日本碍子株式会社 | 六方晶窒化ホウ素単結晶の製造方法 |
US7316746B2 (en) * | 2005-03-18 | 2008-01-08 | General Electric Company | Crystals for a semiconductor radiation detector and method for making the crystals |
US7887631B2 (en) * | 2005-06-24 | 2011-02-15 | The Gemesis Corporation | System and high pressure, high temperature apparatus for producing synthetic diamonds |
FR2891162B1 (fr) | 2005-09-28 | 2008-05-09 | Commissariat Energie Atomique | Reacteur et procede pour le traitement d'une matiere dans un milieu reactionnel fluide |
US7942970B2 (en) | 2005-12-20 | 2011-05-17 | Momentive Performance Materials Inc. | Apparatus for making crystalline composition |
US7642122B2 (en) * | 2006-10-08 | 2010-01-05 | Momentive Performance Materials Inc. | Method for forming nitride crystals |
KR100836006B1 (ko) * | 2007-03-30 | 2008-06-09 | 한국기계연구원 | 초임계수 산화장치 및 이의 방식방법 |
US8097081B2 (en) | 2008-06-05 | 2012-01-17 | Soraa, Inc. | High pressure apparatus and method for nitride crystal growth |
WO2009149254A1 (en) * | 2008-06-05 | 2009-12-10 | Soraa, Inc. | High pressure apparatus and method for nitride crystal growth |
US8871024B2 (en) | 2008-06-05 | 2014-10-28 | Soraa, Inc. | High pressure apparatus and method for nitride crystal growth |
US9157167B1 (en) | 2008-06-05 | 2015-10-13 | Soraa, Inc. | High pressure apparatus and method for nitride crystal growth |
US8303710B2 (en) * | 2008-06-18 | 2012-11-06 | Soraa, Inc. | High pressure apparatus and method for nitride crystal growth |
US20100003492A1 (en) * | 2008-07-07 | 2010-01-07 | Soraa, Inc. | High quality large area bulk non-polar or semipolar gallium based substrates and methods |
WO2011044554A1 (en) | 2009-10-09 | 2011-04-14 | Soraa, Inc. | Method for synthesis of high quality large area bulk gallium based crystals |
US9404197B2 (en) | 2008-07-07 | 2016-08-02 | Soraa, Inc. | Large area, low-defect gallium-containing nitride crystals, method of making, and method of use |
US8284810B1 (en) | 2008-08-04 | 2012-10-09 | Soraa, Inc. | Solid state laser device using a selected crystal orientation in non-polar or semi-polar GaN containing materials and methods |
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US8323405B2 (en) * | 2008-08-07 | 2012-12-04 | Soraa, Inc. | Process and apparatus for growing a crystalline gallium-containing nitride using an azide mineralizer |
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US8021481B2 (en) * | 2008-08-07 | 2011-09-20 | Soraa, Inc. | Process and apparatus for large-scale manufacturing of bulk monocrystalline gallium-containing nitride |
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CN114029003B (zh) * | 2021-11-09 | 2022-07-26 | 中国科学院地球化学研究所 | 一种高钛、钒、铬和高含水的钙镁橄榄石单晶的制备方法 |
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GB2333521B (en) * | 1997-06-11 | 2000-04-26 | Hitachi Cable | Nitride crystal growth method |
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WO2002034972A1 (fr) * | 2000-10-13 | 2002-05-02 | Japan Science And Technology Corporation | Monocristal de nitrure contenant un element metallique du groupe iii ou iv et procede de production de celui-ci |
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2002
- 2002-01-31 US US09/683,658 patent/US20030140845A1/en not_active Abandoned
- 2002-11-22 JP JP2003563702A patent/JP4451662B2/ja not_active Expired - Fee Related
- 2002-11-22 WO PCT/US2002/037755 patent/WO2003064021A1/en active IP Right Grant
- 2002-11-22 DE DE60214436T patent/DE60214436T2/de not_active Expired - Lifetime
- 2002-11-22 EP EP02789868A patent/EP1476249B1/en not_active Expired - Lifetime
- 2002-11-22 AT AT02789868T patent/ATE337850T1/de not_active IP Right Cessation
- 2002-11-22 CN CNB028285034A patent/CN100358621C/zh not_active Expired - Fee Related
- 2002-11-22 PL PL02371733A patent/PL371733A1/xx unknown
- 2002-11-22 KR KR10-2004-7011747A patent/KR20040078682A/ko not_active Application Discontinuation
Patent Citations (3)
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JPS6091062A (ja) * | 1983-10-21 | 1985-05-22 | Kobe Steel Ltd | 高温高圧容器 |
JPH105572A (ja) * | 1996-06-27 | 1998-01-13 | Sumitomo Electric Ind Ltd | ダイヤモンド結晶の合成方法及び合成装置 |
US6270569B1 (en) * | 1997-06-11 | 2001-08-07 | Hitachi Cable Ltd. | Method of fabricating nitride crystal, mixture, liquid phase growth method, nitride crystal, nitride crystal powders, and vapor phase growth method |
Also Published As
Publication number | Publication date |
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PL371733A1 (en) | 2005-06-27 |
WO2003064021A1 (en) | 2003-08-07 |
CN1744942A (zh) | 2006-03-08 |
US20030140845A1 (en) | 2003-07-31 |
JP4451662B2 (ja) | 2010-04-14 |
DE60214436D1 (de) | 2006-10-12 |
JP2005515884A (ja) | 2005-06-02 |
ATE337850T1 (de) | 2006-09-15 |
KR20040078682A (ko) | 2004-09-10 |
EP1476249B1 (en) | 2006-08-30 |
DE60214436T2 (de) | 2007-07-12 |
EP1476249A1 (en) | 2004-11-17 |
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