CN100358621C - 改进的压力容器 - Google Patents
改进的压力容器 Download PDFInfo
- Publication number
- CN100358621C CN100358621C CNB028285034A CN02828503A CN100358621C CN 100358621 C CN100358621 C CN 100358621C CN B028285034 A CNB028285034 A CN B028285034A CN 02828503 A CN02828503 A CN 02828503A CN 100358621 C CN100358621 C CN 100358621C
- Authority
- CN
- China
- Prior art keywords
- pressure
- packing
- pressure vessel
- sealing
- heating element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
- B01J3/04—Pressure vessels, e.g. autoclaves
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J19/0053—Details of the reactor
- B01J19/006—Baffles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J19/0006—Controlling or regulating processes
- B01J19/0013—Controlling the temperature of the process
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J19/0053—Details of the reactor
- B01J19/0073—Sealings
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J19/02—Apparatus characterised by being constructed of material selected for its chemically-resistant properties
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
- B01J3/06—Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
- B01J3/06—Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies
- B01J3/062—Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies characterised by the composition of the materials to be processed
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2203/00—Processes utilising sub- or super atmospheric pressure
- B01J2203/06—High pressure synthesis
- B01J2203/065—Composition of the material produced
- B01J2203/067—Aluminium nitrides
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J2219/00049—Controlling or regulating processes
- B01J2219/00051—Controlling the temperature
- B01J2219/00054—Controlling or regulating the heat exchange system
- B01J2219/00056—Controlling or regulating the heat exchange system involving measured parameters
- B01J2219/00058—Temperature measurement
- B01J2219/00063—Temperature measurement of the reactants
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J2219/00049—Controlling or regulating processes
- B01J2219/00051—Controlling the temperature
- B01J2219/00074—Controlling the temperature by indirect heating or cooling employing heat exchange fluids
- B01J2219/00087—Controlling the temperature by indirect heating or cooling employing heat exchange fluids with heat exchange elements outside the reactor
- B01J2219/00094—Jackets
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J2219/00049—Controlling or regulating processes
- B01J2219/00051—Controlling the temperature
- B01J2219/00132—Controlling the temperature using electric heating or cooling elements
- B01J2219/00135—Electric resistance heaters
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J2219/02—Apparatus characterised by their chemically-resistant properties
- B01J2219/0204—Apparatus characterised by their chemically-resistant properties comprising coatings on the surfaces in direct contact with the reactive components
- B01J2219/0236—Metal based
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J2219/02—Apparatus characterised by their chemically-resistant properties
- B01J2219/025—Apparatus characterised by their chemically-resistant properties characterised by the construction materials of the reactor vessel proper
- B01J2219/0277—Metal based
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J2219/19—Details relating to the geometry of the reactor
- B01J2219/194—Details relating to the geometry of the reactor round
- B01J2219/1941—Details relating to the geometry of the reactor round circular or disk-shaped
- B01J2219/1943—Details relating to the geometry of the reactor round circular or disk-shaped cylindrical
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Metallurgy (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Engineering & Computer Science (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Pressure Vessels And Lids Thereof (AREA)
- Press Drives And Press Lines (AREA)
- Supply Devices, Intensifiers, Converters, And Telemotors (AREA)
- Gasket Seals (AREA)
- General Preparation And Processing Of Foods (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/683,658 | 2002-01-31 | ||
| US09/683,658 US20030140845A1 (en) | 2002-01-31 | 2002-01-31 | Pressure vessel |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1744942A CN1744942A (zh) | 2006-03-08 |
| CN100358621C true CN100358621C (zh) | 2008-01-02 |
Family
ID=27613762
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB028285034A Expired - Fee Related CN100358621C (zh) | 2002-01-31 | 2002-11-22 | 改进的压力容器 |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US20030140845A1 (enExample) |
| EP (1) | EP1476249B1 (enExample) |
| JP (1) | JP4451662B2 (enExample) |
| KR (1) | KR20040078682A (enExample) |
| CN (1) | CN100358621C (enExample) |
| AT (1) | ATE337850T1 (enExample) |
| DE (1) | DE60214436T2 (enExample) |
| PL (1) | PL371733A1 (enExample) |
| WO (1) | WO2003064021A1 (enExample) |
Families Citing this family (78)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7125453B2 (en) * | 2002-01-31 | 2006-10-24 | General Electric Company | High temperature high pressure capsule for processing materials in supercritical fluids |
| US7063741B2 (en) * | 2002-03-27 | 2006-06-20 | General Electric Company | High pressure high temperature growth of crystalline group III metal nitrides |
| US7101433B2 (en) * | 2002-12-18 | 2006-09-05 | General Electric Company | High pressure/high temperature apparatus with improved temperature control for crystal growth |
| US20050131126A1 (en) * | 2003-02-27 | 2005-06-16 | Kumin Yang | Production of polymer nanocomposites using supercritical fluids |
| US20050257738A1 (en) * | 2004-05-21 | 2005-11-24 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing apparatus of semiconductor device and pattern-forming method |
| JP4276627B2 (ja) | 2005-01-12 | 2009-06-10 | ソルボサーマル結晶成長技術研究組合 | 単結晶育成用圧力容器およびその製造方法 |
| US7704324B2 (en) * | 2005-01-25 | 2010-04-27 | General Electric Company | Apparatus for processing materials in supercritical fluids and methods thereof |
| JP4925463B2 (ja) * | 2005-02-16 | 2012-04-25 | 日本碍子株式会社 | 六方晶窒化ホウ素単結晶の製造方法 |
| US7316746B2 (en) * | 2005-03-18 | 2008-01-08 | General Electric Company | Crystals for a semiconductor radiation detector and method for making the crystals |
| US7887631B2 (en) * | 2005-06-24 | 2011-02-15 | The Gemesis Corporation | System and high pressure, high temperature apparatus for producing synthetic diamonds |
| FR2891162B1 (fr) * | 2005-09-28 | 2008-05-09 | Commissariat Energie Atomique | Reacteur et procede pour le traitement d'une matiere dans un milieu reactionnel fluide |
| US7942970B2 (en) | 2005-12-20 | 2011-05-17 | Momentive Performance Materials Inc. | Apparatus for making crystalline composition |
| WO2008045337A1 (en) * | 2006-10-08 | 2008-04-17 | Momentive Performance Materials Inc. | Method for forming nitride crystals |
| KR100836006B1 (ko) * | 2007-03-30 | 2008-06-09 | 한국기계연구원 | 초임계수 산화장치 및 이의 방식방법 |
| US8097081B2 (en) | 2008-06-05 | 2012-01-17 | Soraa, Inc. | High pressure apparatus and method for nitride crystal growth |
| US8871024B2 (en) | 2008-06-05 | 2014-10-28 | Soraa, Inc. | High pressure apparatus and method for nitride crystal growth |
| JP5536046B2 (ja) * | 2008-06-05 | 2014-07-02 | ソーラ インコーポレーション | 窒化物結晶成長用の高圧装置及び結晶成長方法 |
| US9157167B1 (en) | 2008-06-05 | 2015-10-13 | Soraa, Inc. | High pressure apparatus and method for nitride crystal growth |
| US8303710B2 (en) * | 2008-06-18 | 2012-11-06 | Soraa, Inc. | High pressure apparatus and method for nitride crystal growth |
| WO2011044554A1 (en) | 2009-10-09 | 2011-04-14 | Soraa, Inc. | Method for synthesis of high quality large area bulk gallium based crystals |
| WO2010005914A1 (en) * | 2008-07-07 | 2010-01-14 | Soraa, Inc. | High quality large area bulk non-polar or semipolar gallium based substrates and methods |
| US9404197B2 (en) | 2008-07-07 | 2016-08-02 | Soraa, Inc. | Large area, low-defect gallium-containing nitride crystals, method of making, and method of use |
| US8284810B1 (en) | 2008-08-04 | 2012-10-09 | Soraa, Inc. | Solid state laser device using a selected crystal orientation in non-polar or semi-polar GaN containing materials and methods |
| JP2011530194A (ja) * | 2008-08-04 | 2011-12-15 | ソラア インコーポレーテッド | 物質および蛍光体を含んだ非分極性あるいは半極性のガリウムを用いた白色灯デバイス |
| US8430958B2 (en) | 2008-08-07 | 2013-04-30 | Soraa, Inc. | Apparatus and method for seed crystal utilization in large-scale manufacturing of gallium nitride |
| US8979999B2 (en) * | 2008-08-07 | 2015-03-17 | Soraa, Inc. | Process for large-scale ammonothermal manufacturing of gallium nitride boules |
| US8021481B2 (en) | 2008-08-07 | 2011-09-20 | Soraa, Inc. | Process and apparatus for large-scale manufacturing of bulk monocrystalline gallium-containing nitride |
| US8323405B2 (en) * | 2008-08-07 | 2012-12-04 | Soraa, Inc. | Process and apparatus for growing a crystalline gallium-containing nitride using an azide mineralizer |
| US10036099B2 (en) | 2008-08-07 | 2018-07-31 | Slt Technologies, Inc. | Process for large-scale ammonothermal manufacturing of gallium nitride boules |
| US8148801B2 (en) | 2008-08-25 | 2012-04-03 | Soraa, Inc. | Nitride crystal with removable surface layer and methods of manufacture |
| US7976630B2 (en) | 2008-09-11 | 2011-07-12 | Soraa, Inc. | Large-area seed for ammonothermal growth of bulk gallium nitride and method of manufacture |
| US8354679B1 (en) | 2008-10-02 | 2013-01-15 | Soraa, Inc. | Microcavity light emitting diode method of manufacture |
| US8455894B1 (en) | 2008-10-17 | 2013-06-04 | Soraa, Inc. | Photonic-crystal light emitting diode and method of manufacture |
| US8461071B2 (en) | 2008-12-12 | 2013-06-11 | Soraa, Inc. | Polycrystalline group III metal nitride with getter and method of making |
| US8987156B2 (en) | 2008-12-12 | 2015-03-24 | Soraa, Inc. | Polycrystalline group III metal nitride with getter and method of making |
| US20100147210A1 (en) * | 2008-12-12 | 2010-06-17 | Soraa, Inc. | high pressure apparatus and method for nitride crystal growth |
| US8878230B2 (en) | 2010-03-11 | 2014-11-04 | Soraa, Inc. | Semi-insulating group III metal nitride and method of manufacture |
| US9543392B1 (en) | 2008-12-12 | 2017-01-10 | Soraa, Inc. | Transparent group III metal nitride and method of manufacture |
| USRE47114E1 (en) | 2008-12-12 | 2018-11-06 | Slt Technologies, Inc. | Polycrystalline group III metal nitride with getter and method of making |
| US9589792B2 (en) * | 2012-11-26 | 2017-03-07 | Soraa, Inc. | High quality group-III metal nitride crystals, methods of making, and methods of use |
| US8299473B1 (en) | 2009-04-07 | 2012-10-30 | Soraa, Inc. | Polarized white light devices using non-polar or semipolar gallium containing materials and transparent phosphors |
| US8306081B1 (en) | 2009-05-27 | 2012-11-06 | Soraa, Inc. | High indium containing InGaN substrates for long wavelength optical devices |
| US9250044B1 (en) | 2009-05-29 | 2016-02-02 | Soraa Laser Diode, Inc. | Gallium and nitrogen containing laser diode dazzling devices and methods of use |
| US9800017B1 (en) | 2009-05-29 | 2017-10-24 | Soraa Laser Diode, Inc. | Laser device and method for a vehicle |
| US8509275B1 (en) | 2009-05-29 | 2013-08-13 | Soraa, Inc. | Gallium nitride based laser dazzling device and method |
| US8435347B2 (en) * | 2009-09-29 | 2013-05-07 | Soraa, Inc. | High pressure apparatus with stackable rings |
| US9564320B2 (en) | 2010-06-18 | 2017-02-07 | Soraa, Inc. | Large area nitride crystal and method for making it |
| CN101889711B (zh) * | 2010-06-25 | 2014-09-17 | 于亮 | 流体超高压加工设备 |
| CN101905137B (zh) * | 2010-07-26 | 2015-10-14 | 中国计量学院 | 石英管内外气压平衡反应装置 |
| US8729559B2 (en) | 2010-10-13 | 2014-05-20 | Soraa, Inc. | Method of making bulk InGaN substrates and devices thereon |
| US8786053B2 (en) | 2011-01-24 | 2014-07-22 | Soraa, Inc. | Gallium-nitride-on-handle substrate materials and devices and method of manufacture |
| US8492185B1 (en) | 2011-07-14 | 2013-07-23 | Soraa, Inc. | Large area nonpolar or semipolar gallium and nitrogen containing substrate and resulting devices |
| US9694158B2 (en) * | 2011-10-21 | 2017-07-04 | Ahmad Mohamad Slim | Torque for incrementally advancing a catheter during right heart catheterization |
| US10029955B1 (en) | 2011-10-24 | 2018-07-24 | Slt Technologies, Inc. | Capsule for high pressure, high temperature processing of materials and methods of use |
| US8482104B2 (en) | 2012-01-09 | 2013-07-09 | Soraa, Inc. | Method for growth of indium-containing nitride films |
| DE112013001505T5 (de) * | 2012-04-10 | 2015-03-19 | The Regents Of The University Of California | Apparat zur Verwendung zum Züchten von Gruppe lll-Nitrid-Kristallen unter Verwendung von Carbonfaser enthaltenden Materialien und damit gezüchtetes Gruppe lll-Nitrid |
| US10145026B2 (en) | 2012-06-04 | 2018-12-04 | Slt Technologies, Inc. | Process for large-scale ammonothermal manufacturing of semipolar gallium nitride boules |
| US9275912B1 (en) | 2012-08-30 | 2016-03-01 | Soraa, Inc. | Method for quantification of extended defects in gallium-containing nitride crystals |
| US9299555B1 (en) | 2012-09-28 | 2016-03-29 | Soraa, Inc. | Ultrapure mineralizers and methods for nitride crystal growth |
| US20140117008A1 (en) * | 2012-10-31 | 2014-05-01 | Mikrowellen-Labor-Systeme Gmbh | Pressure Vessel |
| US9650723B1 (en) | 2013-04-11 | 2017-05-16 | Soraa, Inc. | Large area seed crystal for ammonothermal crystal growth and method of making |
| CN103752214B (zh) * | 2014-01-10 | 2016-04-13 | 长园电子(东莞)有限公司 | 一种过氧化物硫化体系橡胶制件的制造设备及其制备方法 |
| US11437774B2 (en) | 2015-08-19 | 2022-09-06 | Kyocera Sld Laser, Inc. | High-luminous flux laser-based white light source |
| US10174438B2 (en) | 2017-03-30 | 2019-01-08 | Slt Technologies, Inc. | Apparatus for high pressure reaction |
| CN107698012B (zh) * | 2017-10-20 | 2024-02-13 | 吴丹丹 | 一种卧式自平衡超临界反应装置 |
| DE102018001690B3 (de) * | 2017-11-28 | 2019-05-23 | Carl Freudenberg Kg | Dichtungsanordnung |
| US11421843B2 (en) | 2018-12-21 | 2022-08-23 | Kyocera Sld Laser, Inc. | Fiber-delivered laser-induced dynamic light system |
| US11239637B2 (en) | 2018-12-21 | 2022-02-01 | Kyocera Sld Laser, Inc. | Fiber delivered laser induced white light system |
| US11466384B2 (en) | 2019-01-08 | 2022-10-11 | Slt Technologies, Inc. | Method of forming a high quality group-III metal nitride boule or wafer using a patterned substrate |
| US12000552B2 (en) | 2019-01-18 | 2024-06-04 | Kyocera Sld Laser, Inc. | Laser-based fiber-coupled white light system for a vehicle |
| US11884202B2 (en) | 2019-01-18 | 2024-01-30 | Kyocera Sld Laser, Inc. | Laser-based fiber-coupled white light system |
| US12152742B2 (en) | 2019-01-18 | 2024-11-26 | Kyocera Sld Laser, Inc. | Laser-based light guide-coupled wide-spectrum light system |
| US11721549B2 (en) | 2020-02-11 | 2023-08-08 | Slt Technologies, Inc. | Large area group III nitride crystals and substrates, methods of making, and methods of use |
| JP2023513570A (ja) | 2020-02-11 | 2023-03-31 | エスエルティー テクノロジーズ インコーポレイテッド | 改善されたiii族窒化物基板、その製造方法、並びにその使用方法 |
| US12091771B2 (en) | 2020-02-11 | 2024-09-17 | Slt Technologies, Inc. | Large area group III nitride crystals and substrates, methods of making, and methods of use |
| JP7483669B2 (ja) | 2020-11-02 | 2024-05-15 | エスエルティー テクノロジーズ インコーポレイテッド | 窒化物結晶成長のための超高純度鉱化剤及び改良された方法 |
| CN114029003B (zh) * | 2021-11-09 | 2022-07-26 | 中国科学院地球化学研究所 | 一种高钛、钒、铬和高含水的钙镁橄榄石单晶的制备方法 |
| CN116040966A (zh) * | 2023-01-17 | 2023-05-02 | 东华大学 | 一种利用热高压强处理的玻璃化学强化方法 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6091062A (ja) * | 1983-10-21 | 1985-05-22 | Kobe Steel Ltd | 高温高圧容器 |
| JPH105572A (ja) * | 1996-06-27 | 1998-01-13 | Sumitomo Electric Ind Ltd | ダイヤモンド結晶の合成方法及び合成装置 |
| US6270569B1 (en) * | 1997-06-11 | 2001-08-07 | Hitachi Cable Ltd. | Method of fabricating nitride crystal, mixture, liquid phase growth method, nitride crystal, nitride crystal powders, and vapor phase growth method |
Family Cites Families (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US1879278A (en) * | 1931-09-01 | 1932-09-27 | Peters Cartridge Company | Cartridge |
| US2544414A (en) * | 1946-11-22 | 1951-03-06 | Norton Co | High-pressure apparatus |
| US2785058A (en) * | 1952-04-28 | 1957-03-12 | Bell Telephone Labor Inc | Method of growing quartz crystals |
| US2947610A (en) * | 1958-01-06 | 1960-08-02 | Gen Electric | Method of making diamonds |
| US2947609A (en) * | 1958-01-06 | 1960-08-02 | Gen Electric | Diamond synthesis |
| US3107395A (en) * | 1959-11-27 | 1963-10-22 | Gen Electric | High pressure high temperature apparatus |
| FR1275127A (fr) * | 1960-11-04 | 1961-11-03 | Perfectionnements apportés aux matrices destinées à fonctionner à des pressions élevées | |
| US3030662A (en) * | 1961-05-24 | 1962-04-24 | Gen Electric | Pressure distribution in reaction vessels |
| US3088170A (en) * | 1961-08-02 | 1963-05-07 | Gen Electric | Two-terminal end cap for high pressure, high temperature reaction vessels |
| US3567643A (en) * | 1964-02-18 | 1971-03-02 | Union Carbide Corp | Hydrothermal process for growing crystals having the structure of beryl in an acid halide medium |
| US3313004A (en) * | 1965-06-14 | 1967-04-11 | Fred W Vahldiek | High pressure electrical resistance cell |
| US3473935A (en) * | 1965-08-18 | 1969-10-21 | Wayne D Wilson | Synthesis of beryl |
| US3607014A (en) * | 1968-12-09 | 1971-09-21 | Dow Chemical Co | Method for preparing aluminum nitride and metal fluoride single crystals |
| US4891165A (en) * | 1988-07-28 | 1990-01-02 | Best Industries, Inc. | Device and method for encapsulating radioactive materials |
| DE4413423A1 (de) * | 1994-04-18 | 1995-10-19 | Paar Anton Kg | Vorrichtung zum Aufschluß von Substanzen |
| JP3810116B2 (ja) * | 1996-02-05 | 2006-08-16 | 電気化学工業株式会社 | 超高圧高温発生装置及びcBNの合成法 |
| GB2333521B (en) * | 1997-06-11 | 2000-04-26 | Hitachi Cable | Nitride crystal growth method |
| US6177057B1 (en) * | 1999-02-09 | 2001-01-23 | The United States Of America As Represented By The Secretary Of The Navy | Process for preparing bulk cubic gallium nitride |
| EP1333112A4 (en) * | 2000-10-13 | 2004-05-19 | Japan Science & Tech Corp | CRYSTAL OF NITRIDE-CONTAINING METAL ELEMENT FROM GROUP III OR IV AND METHOD FOR THE PRODUCTION THEREOF |
| TWI230685B (en) * | 2001-01-04 | 2005-04-11 | Univ Nat Cheng Kung | Method and apparatus for synthesizing aluminium nitride |
| US7125453B2 (en) * | 2002-01-31 | 2006-10-24 | General Electric Company | High temperature high pressure capsule for processing materials in supercritical fluids |
-
2002
- 2002-01-31 US US09/683,658 patent/US20030140845A1/en not_active Abandoned
- 2002-11-22 KR KR10-2004-7011747A patent/KR20040078682A/ko not_active Ceased
- 2002-11-22 JP JP2003563702A patent/JP4451662B2/ja not_active Expired - Fee Related
- 2002-11-22 PL PL02371733A patent/PL371733A1/xx unknown
- 2002-11-22 EP EP02789868A patent/EP1476249B1/en not_active Expired - Lifetime
- 2002-11-22 WO PCT/US2002/037755 patent/WO2003064021A1/en not_active Ceased
- 2002-11-22 CN CNB028285034A patent/CN100358621C/zh not_active Expired - Fee Related
- 2002-11-22 AT AT02789868T patent/ATE337850T1/de not_active IP Right Cessation
- 2002-11-22 DE DE60214436T patent/DE60214436T2/de not_active Expired - Lifetime
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6091062A (ja) * | 1983-10-21 | 1985-05-22 | Kobe Steel Ltd | 高温高圧容器 |
| JPH105572A (ja) * | 1996-06-27 | 1998-01-13 | Sumitomo Electric Ind Ltd | ダイヤモンド結晶の合成方法及び合成装置 |
| US6270569B1 (en) * | 1997-06-11 | 2001-08-07 | Hitachi Cable Ltd. | Method of fabricating nitride crystal, mixture, liquid phase growth method, nitride crystal, nitride crystal powders, and vapor phase growth method |
Also Published As
| Publication number | Publication date |
|---|---|
| PL371733A1 (en) | 2005-06-27 |
| KR20040078682A (ko) | 2004-09-10 |
| ATE337850T1 (de) | 2006-09-15 |
| JP2005515884A (ja) | 2005-06-02 |
| EP1476249B1 (en) | 2006-08-30 |
| DE60214436T2 (de) | 2007-07-12 |
| WO2003064021A1 (en) | 2003-08-07 |
| DE60214436D1 (de) | 2006-10-12 |
| EP1476249A1 (en) | 2004-11-17 |
| US20030140845A1 (en) | 2003-07-31 |
| CN1744942A (zh) | 2006-03-08 |
| JP4451662B2 (ja) | 2010-04-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN100358621C (zh) | 改进的压力容器 | |
| CN100376317C (zh) | 用于在超临界流体中处理材料的高温高压小盒 | |
| CN101163540B (zh) | 用于在超临界流体中处理材料的装置及其方法 | |
| TW468014B (en) | Compliant high temperature seals for dissimilar materials | |
| US7101433B2 (en) | High pressure/high temperature apparatus with improved temperature control for crystal growth | |
| US4264556A (en) | Thermal isostatic densifying method and apparatus | |
| JP2005515884A5 (enExample) | ||
| IE50056B1 (en) | Polycrystalline diamond body and method of making same | |
| CN114558519A (zh) | 金刚石硬质合金复合片的高温高压合成装置及其方法 | |
| JP2008546528A (ja) | 人工ダイヤモンドを成長させる装置と方法 | |
| KR950012845B1 (ko) | 이중 고체 유동성 중합체계를 이용한 성형방법 | |
| ZA200406505B (en) | Improved pressure vessel. | |
| Dziubek et al. | Complementing diffraction data with volumetric measurements | |
| JPH06504952A (ja) | 電気パルス式パワー真空プレス | |
| JP7431455B2 (ja) | 合成ダイヤモンドの製造装置および製造方法 | |
| Shatskiy et al. | Pressless split-sphere apparatus equipped with scaled-up Kawai-cell for mineralogical studies at 10–20 GPa | |
| WO2020240213A1 (en) | Apparatus and methods for the manufacture of synthetic diamonds | |
| CN1777472A (zh) | 用于晶体生长的高压装置 | |
| US20230241568A1 (en) | Apparatus and methods for the manufacture of synthetic diamonds and cubic boron nitride | |
| JPH0222122B2 (enExample) | ||
| JPH0661451B2 (ja) | 超高圧発生装置 | |
| Towle et al. | Force Intensifier for Low Temperature Use | |
| JPH11222603A (ja) | 高圧力高温装置 | |
| Yasunami et al. | On the production of high temperature and pressures (7 kbar, 1600 deg C) | |
| ZA200506989B (en) | High temperature high pressure capsule for processing materials in supercritical fluids |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: MOMENDIFU PERFORMANCE MATERIAL CO., LTD. Free format text: FORMER OWNER: GENERAL ELECTRIC CO. Effective date: 20080801 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20080801 Address after: American Connecticut Patentee after: Gen Electric Address before: American New York Patentee before: General Electric Company |
|
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20080102 Termination date: 20091222 |