JP4444428B2 - エッチング深さの検出方法並びにエッチングモニター装置及びエッチング装置 - Google Patents

エッチング深さの検出方法並びにエッチングモニター装置及びエッチング装置 Download PDF

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Publication number
JP4444428B2
JP4444428B2 JP2000019524A JP2000019524A JP4444428B2 JP 4444428 B2 JP4444428 B2 JP 4444428B2 JP 2000019524 A JP2000019524 A JP 2000019524A JP 2000019524 A JP2000019524 A JP 2000019524A JP 4444428 B2 JP4444428 B2 JP 4444428B2
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Japan
Prior art keywords
etching
interference
etching rate
calculated
rate
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Expired - Fee Related
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JP2000019524A
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English (en)
Japanese (ja)
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JP2001210625A (ja
JP2001210625A5 (enExample
Inventor
陽平 山澤
義仁 大川
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to JP2000019524A priority Critical patent/JP4444428B2/ja
Priority to US09/769,307 priority patent/US6448094B2/en
Priority to KR1020010003816A priority patent/KR100966391B1/ko
Priority to TW090101667A priority patent/TW483066B/zh
Publication of JP2001210625A publication Critical patent/JP2001210625A/ja
Publication of JP2001210625A5 publication Critical patent/JP2001210625A5/ja
Priority to KR1020090065271A priority patent/KR100966390B1/ko
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Publication of JP4444428B2 publication Critical patent/JP4444428B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • ing And Chemical Polishing (AREA)
  • Length Measuring Devices By Optical Means (AREA)
JP2000019524A 2000-01-28 2000-01-28 エッチング深さの検出方法並びにエッチングモニター装置及びエッチング装置 Expired - Fee Related JP4444428B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2000019524A JP4444428B2 (ja) 2000-01-28 2000-01-28 エッチング深さの検出方法並びにエッチングモニター装置及びエッチング装置
US09/769,307 US6448094B2 (en) 2000-01-28 2001-01-26 Method of detecting etching depth
KR1020010003816A KR100966391B1 (ko) 2000-01-28 2001-01-26 에칭 깊이 검출 방법
TW090101667A TW483066B (en) 2000-01-28 2001-01-29 Method of detecting etching depth
KR1020090065271A KR100966390B1 (ko) 2000-01-28 2009-07-17 에칭 모니터 장치, 에칭 장치 및 에칭 깊이 검출 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000019524A JP4444428B2 (ja) 2000-01-28 2000-01-28 エッチング深さの検出方法並びにエッチングモニター装置及びエッチング装置

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2009092532A Division JP4909372B2 (ja) 2009-04-06 2009-04-06 エッチング深さの検出方法並びにエッチングモニター装置及びエッチング装置
JP2009253423A Division JP5199981B2 (ja) 2009-11-04 2009-11-04 エッチング深さの検出方法並びにエッチングモニター装置及びエッチング装置

Publications (3)

Publication Number Publication Date
JP2001210625A JP2001210625A (ja) 2001-08-03
JP2001210625A5 JP2001210625A5 (enExample) 2007-03-22
JP4444428B2 true JP4444428B2 (ja) 2010-03-31

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Family Applications (1)

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JP2000019524A Expired - Fee Related JP4444428B2 (ja) 2000-01-28 2000-01-28 エッチング深さの検出方法並びにエッチングモニター装置及びエッチング装置

Country Status (4)

Country Link
US (1) US6448094B2 (enExample)
JP (1) JP4444428B2 (enExample)
KR (2) KR100966391B1 (enExample)
TW (1) TW483066B (enExample)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB0106686D0 (en) * 2001-03-19 2001-05-09 Keating Michael Method and system for determining engraved area volume
US7133137B2 (en) * 2002-06-27 2006-11-07 Visx, Incorporated Integrated scanning and ocular tomography system and method
US6686270B1 (en) * 2002-08-05 2004-02-03 Advanced Micro Devices, Inc. Dual damascene trench depth monitoring
JP4500510B2 (ja) * 2003-06-05 2010-07-14 東京エレクトロン株式会社 エッチング量検出方法，エッチング方法，およびエッチング装置
US7821655B2 (en) * 2004-02-09 2010-10-26 Axcelis Technologies, Inc. In-situ absolute measurement process and apparatus for film thickness, film removal rate, and removal endpoint prediction
JP2007027478A (ja) * 2005-07-19 2007-02-01 Sharp Corp エッチング方法およびエッチング装置
US7833381B2 (en) * 2005-08-18 2010-11-16 David Johnson Optical emission interferometry for PECVD using a gas injection hole
JP3938928B1 (ja) * 2006-06-22 2007-06-27 株式会社コナミデジタルエンタテインメント 線形状処理装置、線形状処理方法、ならびに、プログラム
US20080078948A1 (en) * 2006-10-03 2008-04-03 Tokyo Electron Limited Processing termination detection method and apparatus
KR101073229B1 (ko) 2008-01-17 2011-10-12 도쿄엘렉트론가부시키가이샤 에칭량 산출 방법, 기억 매체 및 에칭량 산출 장치
JP5192850B2 (ja) * 2008-02-27 2013-05-08 株式会社日立ハイテクノロジーズ エッチング終点判定方法
KR101493048B1 (ko) * 2009-02-27 2015-02-13 삼성전자주식회사 반도체 소자 측정 장치 및 이를 사용한 반도체 소자 측정 방법
US8778204B2 (en) * 2010-10-29 2014-07-15 Applied Materials, Inc. Methods for reducing photoresist interference when monitoring a target layer in a plasma process
US20130273237A1 (en) * 2012-04-12 2013-10-17 David Johnson Method to Determine the Thickness of a Thin Film During Plasma Deposition
GB201916079D0 (en) 2019-11-05 2019-12-18 Spts Technologies Ltd Apparatus and method
KR102515864B1 (ko) * 2020-09-17 2023-03-31 주식회사 히타치하이테크 플라스마 처리 장치 및 플라스마 처리 방법
CN112291944B (zh) * 2020-10-27 2022-02-18 惠州市特创电子科技股份有限公司 线路板及其激光开窗方法
CN112490123B (zh) * 2020-11-20 2024-05-17 北京北方华创微电子装备有限公司 补充刻蚀方法、半导体刻蚀设备
GB202109722D0 (en) * 2021-07-06 2021-08-18 Oxford Instruments Nanotechnology Tools Ltd Method of etching or depositing a thin film
CN118782490B (zh) * 2024-09-12 2025-01-03 上海邦芯半导体科技有限公司 刻蚀深度检测装置、方法及反应处理设备
CN118859647B (zh) * 2024-09-13 2025-02-14 天津华慧芯科技集团有限公司 一种纳米压印母版的高精度测量方法
CN120491369B (zh) * 2025-07-16 2025-10-03 长春市华信科瑞光电技术有限公司 片上全光开关及其制备方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61152017A (ja) * 1984-12-26 1986-07-10 Hitachi Ltd エツチングモニタ装置
FR2616269B1 (fr) * 1987-06-04 1990-11-09 Labo Electronique Physique Dispositif de test pour la mise en oeuvre d'un procede de realisation de dispositifs semiconducteurs
JPH0223617A (ja) * 1988-07-13 1990-01-25 Mitsubishi Electric Corp 半導体基板ウェハの溝形成方法
JP2545948B2 (ja) * 1988-09-06 1996-10-23 富士通株式会社 エッチング装置
JP2742446B2 (ja) * 1989-05-23 1998-04-22 富士通株式会社 エッチングの方法および装置
US5395769A (en) * 1992-06-26 1995-03-07 International Business Machines Corporation Method for controlling silicon etch depth
JPH09129619A (ja) * 1995-08-31 1997-05-16 Toshiba Corp エッチング深さ測定装置
JPH1064884A (ja) 1996-08-13 1998-03-06 Fujitsu Ltd エッチング装置及びエッチング方法
JPH11176815A (ja) * 1997-12-15 1999-07-02 Ricoh Co Ltd ドライエッチングの終点判定方法およびドライエッチング装置
JPH11261105A (ja) 1998-03-11 1999-09-24 Toshiba Corp 半導体発光素子

Also Published As

Publication number Publication date
TW483066B (en) 2002-04-11
KR100966391B1 (ko) 2010-06-28
JP2001210625A (ja) 2001-08-03
US6448094B2 (en) 2002-09-10
KR20090084801A (ko) 2009-08-05
US20010010939A1 (en) 2001-08-02
KR100966390B1 (ko) 2010-06-28
KR20010078097A (ko) 2001-08-20

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