TW483066B - Method of detecting etching depth - Google Patents
Method of detecting etching depth Download PDFInfo
- Publication number
- TW483066B TW483066B TW090101667A TW90101667A TW483066B TW 483066 B TW483066 B TW 483066B TW 090101667 A TW090101667 A TW 090101667A TW 90101667 A TW90101667 A TW 90101667A TW 483066 B TW483066 B TW 483066B
- Authority
- TW
- Taiwan
- Prior art keywords
- etching
- interference
- depth
- light
- etched
- Prior art date
Links
- 238000005530 etching Methods 0.000 title claims abstract description 188
- 238000000034 method Methods 0.000 title claims abstract description 50
- 238000004458 analytical method Methods 0.000 claims abstract description 36
- 230000001678 irradiating effect Effects 0.000 claims abstract 3
- 238000004364 calculation method Methods 0.000 claims description 48
- 238000001514 detection method Methods 0.000 claims description 30
- 238000012545 processing Methods 0.000 claims description 20
- 230000000875 corresponding effect Effects 0.000 claims description 9
- 230000014509 gene expression Effects 0.000 claims description 9
- 230000002079 cooperative effect Effects 0.000 claims description 6
- 238000006243 chemical reaction Methods 0.000 claims description 4
- 230000000737 periodic effect Effects 0.000 claims description 4
- 239000013589 supplement Substances 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 2
- 229910052704 radon Inorganic materials 0.000 claims description 2
- SYUHGPGVQRZVTB-UHFFFAOYSA-N radon atom Chemical compound [Rn] SYUHGPGVQRZVTB-UHFFFAOYSA-N 0.000 claims description 2
- 230000002452 interceptive effect Effects 0.000 claims 2
- 239000004065 semiconductor Substances 0.000 description 21
- 239000013307 optical fiber Substances 0.000 description 11
- 238000012806 monitoring device Methods 0.000 description 8
- 101100234408 Danio rerio kif7 gene Proteins 0.000 description 6
- 101100221620 Drosophila melanogaster cos gene Proteins 0.000 description 6
- 101100398237 Xenopus tropicalis kif11 gene Proteins 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 238000012544 monitoring process Methods 0.000 description 4
- 230000009469 supplementation Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 230000000295 complement effect Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- NUHSROFQTUXZQQ-UHFFFAOYSA-N isopentenyl diphosphate Chemical compound CC(=C)CCO[P@](O)(=O)OP(O)(O)=O NUHSROFQTUXZQQ-UHFFFAOYSA-N 0.000 description 2
- 238000004020 luminiscence type Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 235000012054 meals Nutrition 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 230000001502 supplementing effect Effects 0.000 description 2
- 230000002123 temporal effect Effects 0.000 description 2
- NAWXUBYGYWOOIX-SFHVURJKSA-N (2s)-2-[[4-[2-(2,4-diaminoquinazolin-6-yl)ethyl]benzoyl]amino]-4-methylidenepentanedioic acid Chemical compound C1=CC2=NC(N)=NC(N)=C2C=C1CCC1=CC=C(C(=O)N[C@@H](CC(=C)C(O)=O)C(O)=O)C=C1 NAWXUBYGYWOOIX-SFHVURJKSA-N 0.000 description 1
- WKVZMKDXJFCMMD-UVWUDEKDSA-L (5ar,8ar,9r)-5-[[(2r,4ar,6r,7r,8r,8as)-7,8-dihydroxy-2-methyl-4,4a,6,7,8,8a-hexahydropyrano[3,2-d][1,3]dioxin-6-yl]oxy]-9-(4-hydroxy-3,5-dimethoxyphenyl)-5a,6,8a,9-tetrahydro-5h-[2]benzofuro[6,5-f][1,3]benzodioxol-8-one;azanide;n,3-bis(2-chloroethyl)-2-ox Chemical compound [NH2-].[NH2-].Cl[Pt+2]Cl.ClCCNP1(=O)OCCCN1CCCl.COC1=C(O)C(OC)=CC([C@@H]2C3=CC=4OCOC=4C=C3C(O[C@H]3[C@@H]([C@@H](O)[C@@H]4O[C@H](C)OC[C@H]4O3)O)[C@@H]3[C@@H]2C(OC3)=O)=C1 WKVZMKDXJFCMMD-UVWUDEKDSA-L 0.000 description 1
- 238000012935 Averaging Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 101150118300 cos gene Proteins 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000000295 emission spectrum Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000010977 jade Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000011897 real-time detection Methods 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- ing And Chemical Polishing (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Length Measuring Devices By Optical Means (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000019524A JP4444428B2 (ja) | 2000-01-28 | 2000-01-28 | エッチング深さの検出方法並びにエッチングモニター装置及びエッチング装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW483066B true TW483066B (en) | 2002-04-11 |
Family
ID=18546207
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW090101667A TW483066B (en) | 2000-01-28 | 2001-01-29 | Method of detecting etching depth |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US6448094B2 (enExample) |
| JP (1) | JP4444428B2 (enExample) |
| KR (2) | KR100966391B1 (enExample) |
| TW (1) | TW483066B (enExample) |
Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB0106686D0 (en) * | 2001-03-19 | 2001-05-09 | Keating Michael | Method and system for determining engraved area volume |
| US7133137B2 (en) | 2002-06-27 | 2006-11-07 | Visx, Incorporated | Integrated scanning and ocular tomography system and method |
| US6686270B1 (en) * | 2002-08-05 | 2004-02-03 | Advanced Micro Devices, Inc. | Dual damascene trench depth monitoring |
| JP4500510B2 (ja) * | 2003-06-05 | 2010-07-14 | 東京エレクトロン株式会社 | エッチング量検出方法，エッチング方法，およびエッチング装置 |
| US7821655B2 (en) * | 2004-02-09 | 2010-10-26 | Axcelis Technologies, Inc. | In-situ absolute measurement process and apparatus for film thickness, film removal rate, and removal endpoint prediction |
| JP2007027478A (ja) * | 2005-07-19 | 2007-02-01 | Sharp Corp | エッチング方法およびエッチング装置 |
| US7833381B2 (en) * | 2005-08-18 | 2010-11-16 | David Johnson | Optical emission interferometry for PECVD using a gas injection hole |
| JP3938928B1 (ja) | 2006-06-22 | 2007-06-27 | 株式会社コナミデジタルエンタテインメント | 線形状処理装置、線形状処理方法、ならびに、プログラム |
| US20080078948A1 (en) * | 2006-10-03 | 2008-04-03 | Tokyo Electron Limited | Processing termination detection method and apparatus |
| KR101073229B1 (ko) | 2008-01-17 | 2011-10-12 | 도쿄엘렉트론가부시키가이샤 | 에칭량 산출 방법, 기억 매체 및 에칭량 산출 장치 |
| JP5192850B2 (ja) * | 2008-02-27 | 2013-05-08 | 株式会社日立ハイテクノロジーズ | エッチング終点判定方法 |
| KR101493048B1 (ko) * | 2009-02-27 | 2015-02-13 | 삼성전자주식회사 | 반도체 소자 측정 장치 및 이를 사용한 반도체 소자 측정 방법 |
| US8778204B2 (en) * | 2010-10-29 | 2014-07-15 | Applied Materials, Inc. | Methods for reducing photoresist interference when monitoring a target layer in a plasma process |
| US20130273237A1 (en) * | 2012-04-12 | 2013-10-17 | David Johnson | Method to Determine the Thickness of a Thin Film During Plasma Deposition |
| GB201916079D0 (en) | 2019-11-05 | 2019-12-18 | Spts Technologies Ltd | Apparatus and method |
| WO2022059114A1 (ja) * | 2020-09-17 | 2022-03-24 | 株式会社日立ハイテク | プラズマ処理装置およびプラズマ処理方法 |
| CN112291944B (zh) * | 2020-10-27 | 2022-02-18 | 惠州市特创电子科技股份有限公司 | 线路板及其激光开窗方法 |
| CN112490123B (zh) * | 2020-11-20 | 2024-05-17 | 北京北方华创微电子装备有限公司 | 补充刻蚀方法、半导体刻蚀设备 |
| GB202109722D0 (en) * | 2021-07-06 | 2021-08-18 | Oxford Instruments Nanotechnology Tools Ltd | Method of etching or depositing a thin film |
| CN118782490B (zh) * | 2024-09-12 | 2025-01-03 | 上海邦芯半导体科技有限公司 | 刻蚀深度检测装置、方法及反应处理设备 |
| CN118859647B (zh) * | 2024-09-13 | 2025-02-14 | 天津华慧芯科技集团有限公司 | 一种纳米压印母版的高精度测量方法 |
| CN120491369B (zh) * | 2025-07-16 | 2025-10-03 | 长春市华信科瑞光电技术有限公司 | 片上全光开关及其制备方法 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61152017A (ja) * | 1984-12-26 | 1986-07-10 | Hitachi Ltd | エツチングモニタ装置 |
| FR2616269B1 (fr) * | 1987-06-04 | 1990-11-09 | Labo Electronique Physique | Dispositif de test pour la mise en oeuvre d'un procede de realisation de dispositifs semiconducteurs |
| JPH0223617A (ja) * | 1988-07-13 | 1990-01-25 | Mitsubishi Electric Corp | 半導体基板ウェハの溝形成方法 |
| JP2545948B2 (ja) * | 1988-09-06 | 1996-10-23 | 富士通株式会社 | エッチング装置 |
| JP2742446B2 (ja) * | 1989-05-23 | 1998-04-22 | 富士通株式会社 | エッチングの方法および装置 |
| US5395769A (en) * | 1992-06-26 | 1995-03-07 | International Business Machines Corporation | Method for controlling silicon etch depth |
| JPH09129619A (ja) * | 1995-08-31 | 1997-05-16 | Toshiba Corp | エッチング深さ測定装置 |
| JPH1064884A (ja) | 1996-08-13 | 1998-03-06 | Fujitsu Ltd | エッチング装置及びエッチング方法 |
| JPH11176815A (ja) * | 1997-12-15 | 1999-07-02 | Ricoh Co Ltd | ドライエッチングの終点判定方法およびドライエッチング装置 |
| JPH11261105A (ja) | 1998-03-11 | 1999-09-24 | Toshiba Corp | 半導体発光素子 |
-
2000
- 2000-01-28 JP JP2000019524A patent/JP4444428B2/ja not_active Expired - Fee Related
-
2001
- 2001-01-26 KR KR1020010003816A patent/KR100966391B1/ko not_active Expired - Lifetime
- 2001-01-26 US US09/769,307 patent/US6448094B2/en not_active Expired - Lifetime
- 2001-01-29 TW TW090101667A patent/TW483066B/zh not_active IP Right Cessation
-
2009
- 2009-07-17 KR KR1020090065271A patent/KR100966390B1/ko not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| KR100966391B1 (ko) | 2010-06-28 |
| KR20010078097A (ko) | 2001-08-20 |
| KR100966390B1 (ko) | 2010-06-28 |
| US20010010939A1 (en) | 2001-08-02 |
| US6448094B2 (en) | 2002-09-10 |
| JP2001210625A (ja) | 2001-08-03 |
| KR20090084801A (ko) | 2009-08-05 |
| JP4444428B2 (ja) | 2010-03-31 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TW483066B (en) | Method of detecting etching depth | |
| TW498475B (en) | Detection of process endpoint through monitoring fluctuation of output data | |
| TW492106B (en) | Inspection method for thickness of film to be processed using luminous beam-splitter and method of film processing | |
| US10791884B2 (en) | Automatic paper towel dispenser with LIDAR sensor | |
| CN102738039B (zh) | 测量装置以及等离子体处理装置 | |
| TW200818364A (en) | Neural network methods and apparatuses for monitoring substrate processing | |
| JP5199981B2 (ja) | エッチング深さの検出方法並びにエッチングモニター装置及びエッチング装置 | |
| JP2001210625A5 (enExample) | ||
| TW466557B (en) | Methods and apparatuses for trench depth detection and control | |
| CN100524603C (zh) | 用于确定实时蚀刻速率的浅角干涉工艺及装置 | |
| EP1018632A2 (en) | Non-destructive method and device for measuring the depth of a recessed material | |
| JP4909372B2 (ja) | エッチング深さの検出方法並びにエッチングモニター装置及びエッチング装置 | |
| JP4166400B2 (ja) | 放射温度測定方法 | |
| KR101379915B1 (ko) | 종말점 검출 장치 및 이를 구비한 식각 장치 그리고 종말점검출방법 | |
| JP2612089B2 (ja) | 被エッチング膜の膜厚検出方法、膜厚検出装置及びエッチング装置 | |
| CN106876238B (zh) | 监测等离子体工艺制程的装置和方法 | |
| TWI640031B (zh) | Plasma processing device and method for monitoring plasma process | |
| CN114582699B (zh) | 刻蚀终点检测方法及装置 | |
| JP2015178982A (ja) | 形状測定装置及び形状測定方法 | |
| JPH10325708A (ja) | エッチング深さ測定方法及びその装置 | |
| CN114765112B (zh) | 蚀刻系统及其蚀刻方法 | |
| JP2012156456A (ja) | 基板処理装置および基板処理の終了時点を検出する方法 | |
| US11443928B2 (en) | Etching apparatus and etching method thereof | |
| JP2001284323A (ja) | エッチング深さ検出装置、エッチング装置及びエッチング深さ検出方法、エッチング方法、半導体装置製造方法 | |
| TW200401885A (en) | Method and device for determining the thickness of a layer applied to a carrier, and monitoring system |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GD4A | Issue of patent certificate for granted invention patent | ||
| MK4A | Expiration of patent term of an invention patent |